63 BALL FBGA THERMAL RESISTANCE MICRON Search Results
63 BALL FBGA THERMAL RESISTANCE MICRON Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PQU650M-F-COVER | Murata Manufacturing Co Ltd | PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical |
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TCTH022AE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function |
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TCTH011AE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type |
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TCTH012AE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function |
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TCTH011BE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type |
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63 BALL FBGA THERMAL RESISTANCE MICRON Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MT47H512M8Contextual Info: 4Gb: x4, x8 TwinDie DDR2 SDRAM Functionality TwinDie DDR2 SDRAM MT47H1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT47H512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks For the latest component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options |
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MT47H1G4 MT47H512M8 63-ball Timi68-3900 09005aef8227ee4d/Source 09005aef822d103f MT47H1G MT47H512M8 | |
MT41K256M16Contextual Info: 8Gb: x16 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description Options Marking • Configuration – 32 Meg x 16 x 8 banks x 2 ranks • FBGA package Pb-free – 96-ball FBGA (10mm x 14mm x 1.2mm) |
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MT41K512M16 96-ball 071ns DDR3L-1866) DDR3L-1600) DDR3L-1333) DDR3L-1066) 09005aef84ccb467 MT41K256M16 | |
MT41K512M16
Abstract: 96 ball fbga thermal resistance micron MT41K256M16 DDR3L 63 ball fbga thermal resistance micron micron marking code information marking micron MT41K256M16 DDR3 impedance 1m x16 SDRAM MICRON
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MT41K512M16 MT41K256M16 MT41K512M16. 96-ballw 09005aef84ccb467 MT41K512M16 96 ball fbga thermal resistance micron MT41K256M16 DDR3L 63 ball fbga thermal resistance micron micron marking code information marking micron MT41K256M16 DDR3 impedance 1m x16 SDRAM MICRON | |
MT41K512M16
Abstract: MT41K256M16 96 ball fbga thermal resistance micron Theta JC of FBGA MICRON fBGA package code micron marking code information
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MT41K512M16 MT41K256M16 MT41K512M16. SAC305 09005aef84ccb467 MT41K512M16 MT41K256M16 96 ball fbga thermal resistance micron Theta JC of FBGA MICRON fBGA package code micron marking code information | |
MT47H512M8Contextual Info: 4Gb: x4, x8 TwinDie DDR2 SDRAM Features TwinDie DDR2 SDRAM MT47H1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT47H512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks Features Options • Configuration – 64 Meg x 4 x 8 banks x 2 ranks – 32 Meg x 8 x 8 banks x 2 ranks |
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MT47H1G4 MT47H512M8 63-ball 09005aef8227ee4d mt47h1g MT47H512M8 | |
MT41K256M16
Abstract: MT41K512M16 8Gb DDR3 SDRAM twindie ddr3 udqs DDR3 timing diagram
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MT41K512M16 MT41K256M16 MT41K512M16. SAC305 09005aef84ccb467 MT41K256M16 MT41K512M16 8Gb DDR3 SDRAM twindie ddr3 udqs DDR3 timing diagram | |
63-ball
Abstract: MT47H512M8 MT47H1G marking WMM MICRON 63 MT47H1G4 DDR2-533 DDR2-667 DDR2-800 SAC305
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MT47H1G4 MT47H512M8 63-ball DDR2-800) DDR2-667) DDR2-533) 09005aef8227ee4d mt47h1g MT47H512M8 marking WMM MICRON 63 MT47H1G4 DDR2-533 DDR2-667 DDR2-800 SAC305 | |
Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • |
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Apr/6/00 Jan/18/00 119-pin Nov/11/99 MT55L1MY18P | |
MT47H512M8
Abstract: 63-ball 68 ball fbga thermal resistance IDD3P 63 ball fbga thermal resistance micron DDR2 SDRAM Meg x 4 x 9 banks
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MT47H1G4 MT47H512M8 63-ball 09005aef8227ee4d mt47h1g MT47H512M8 68 ball fbga thermal resistance IDD3P 63 ball fbga thermal resistance micron DDR2 SDRAM Meg x 4 x 9 banks | |
Contextual Info: 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • • • • • |
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MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 100-Pin simplepr/6/00 Jan/18/00 119-pin | |
Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • |
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Apr/6/00 Jan/18/00 119-pin Nov/11/99 MT55L1MY18P | |
GW 9n
Abstract: MS-026 MT58L256L32F MT58L256L36F MT58L256V32F MT58L256V36F MT58L256V36FT-10 MT58L512L18F MT58L512V18F
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MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F July/18/00 119-Pin 165-pin June/13/00 GW 9n MS-026 MT58L256L32F MT58L256L36F MT58L256V32F MT58L256V36F MT58L256V36FT-10 MT58L512L18F MT58L512V18F | |
U48B
Abstract: DDR2 Mechanical Dimensions
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DD52E 512Mb 2D512M42U4BA DD52E U48B DDR2 Mechanical Dimensions | |
Contextual Info: ADVANCE‡ 0.16µm Process 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 18Mb ZBT SRAM 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O FEATURES • • • • • • |
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MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 100-Pin MT55L1MY18F | |
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Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • |
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Apr/6/00 Jan/18/00 119-pin Nov/11/99 MT55L1MY18F | |
Contextual Info: 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • • • • |
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MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 100-Pin Apr/6/00 Jan/18/00 119-pin | |
Contextual Info: 2 Gigabit Stacked DDR2 SDRAM DD53E 256Mb x 8 Features • Low Profile 63 Ball Two-High Stacked Die micropede BGA. • 8 x 11.5 x 1.35mm BGA Package • 50% Space Savings Over Two 60 Ball BGA Packages • Reduced Trace Lengths Over Two BGA Packages • Lead Free—High Temperature Solder Balls |
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DD53E 256Mb 2D256M82U4BA DD53E | |
Contextual Info: 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect FEATURES 100-Pin TQFP1 |
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MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 100-Pin 165Vor Apr/6/00 Jan/18/00 | |
Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect |
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Apr/6/00 Jan/18/00 Nov/11/99 MT58L1MY18P MT58L1MY18P | |
U37YContextual Info: 1 Gigabit Stacked DDR2 SDRAM 128Mb x 8 DD51E Features • Low Profile 63 Ball Two-High Stacked Die micropede BGA • 50% Space Savings Over Two 60 Ball BGA Packages • Significant Space Savings and Reduced Parasitics and • • • • • • • • |
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DD51E 128Mb 2D128M82U3BA DD51E 3887x132 U37Y | |
Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • |
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Apr/6/00 Jan/18/00 119-pin Nov/11/99 MT55L1MY18F | |
Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect |
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Apr/6/00 Jan/18/00 Nov/11/99 MT58L1MY18P MT58L1MY18P | |
Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect |
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165Vor MT58L1MY18D, Apr/6/00 Jan/18/00 Nov/11/99 MT58L1MY18D | |
Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect |
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165Vor MT58L1MY18D, Apr/6/00 Jan/18/00 Nov/11/99 MT58L1MY18D |