MT55L1MY18F Search Results

4c 8184

Abstract: BGA 2J marking code 18-SE
Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • •

Contextual Info: ADVANCE‡ 0.16µm Process 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 18Mb ZBT SRAM 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O FEATURES • • • • • •

Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • •

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • •

Contextual Info: 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • • • •

Contextual Info: PRELIMINARY‡ 0.16µm Process 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O Features Figure 1: 100-Pin TQFP

Contextual Info: 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O Features Figure 1: 100-Pin TQFP • High frequency and 100 percent bus utilization

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 16Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55V512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •

MT55V512Y36F

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 16Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55V512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •

Contextual Info: PRELIMINARY‡ 0.16µm Process 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O Features Figure 1: 100-Pin TQFP

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • •

for 3g 4e

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 16Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55V512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •

MICRON Cross Reference

Abstract: CY7C1339B MT58L128L32F1T-10 CY7C1485V33 CY7C1486V33 CY7C1440V33 CY7C1441V33 CY7C1444V33 CY7C1480V33 CY7C1482V33
Contextual Info: サイプレスセミコンダクター社 同期式SRAMの新製品情報 お問い合わせ先／マーケティング本部 サイプレス営業部 03-5462-9616 サイプレスセミコンダクター社はネットワークやデジタル信号プロセッサ（DSP）アプリ

MT58L512L18PS-7.5

Abstract: MT58L256L18D1T-10 MT58L256L32PF-10 MT55V512V36PT-7.5 GS8162Z36BB-200 GS816032BT-150 MT55L512Y36PF-7.5 MT55L256L36FT-10 MT58L256L36FS-10 MT58L64L32PT-7.5
Contextual Info: MICRON * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss MT55L128V32P1B-6 MT55L128V32P1B-7.5 MT55L128V32P1T-10 MT55L128V32P1T-6 MT55L128V32P1T-7.5 MT55L128V36F1B-10 MT55L128V36F1B-11 MT55L128V36F1B-12