631AA Search Results

631AA-01

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE D DATE 10 AUG 2009 SCALE 4:1 −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y 3X 1 3X DIM A b b1 C D E e HE L L2 SIDE VIEW TOP VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE B DATE 15 MAR 2004 SCALE 8:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM

Contextual Info: MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount

Contextual Info: MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

Contextual Info: MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3 Digital Transistors BRT R1 = 47 kW, R2 = 22 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

Contextual Info: mESD3.3DT5G SERIES ESD Protection Diodes In Ultra Small SOT−723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board

NSR30CM3T5G

Contextual Info: NSR30CM3T5G Preferred Device Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

NTK4401NT1

Abstract: NTK4401NT1G 30367 SOT-723
Contextual Info: NTK4401N Product Preview Small Signal MOSFET 20 V, Single N−Channel, SOT−723 Gate ESD Protection http://onsemi.com Features • • • • Low Gate Charge for Fast Switching Small Footprint 1.2 x 1.2 mm ESD Protected Gate Pb−Free Package for Green Manufacturing (G Suffix)

Contextual Info: mESD3.3DT5G SERIES ESD Protection Diodes In Ultra Small SOT−723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board

NTK3134NT1G

Abstract: NTK3134N NTK3134NT5G SC89 mosfet marking kf
Contextual Info: NTK3134N Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723 Features • • • • • http://onsemi.com N channel Switch with Low RDS on 44% Smaller Footprint and 38% Thinner than SC89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating

Contextual Info: MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount

Contextual Info: NSR30CM3T5G Preferred Device Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: 2SC5658K3T5G Product Preview NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board

SMMUN2211LT3G

Abstract: DTC114EM3 SOT323 A8A DTC114EET1G
Contextual Info: MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

BAT54M3T5G

Abstract: 419C-02 MMVL3700T1
Contextual Info: Schottky Diodes Device 1SS383T1 VR Volts CT @ V pF Max 25 40 IR @ V Volts VF Volts Max nA Max Volts 0.6 5000 40 Type Package Dual Independent SC−82AB Case 419C−02 BAT54CXV3T5 30 10 1.0 0.4 2000 25 Dual Common Cathode SC−89 Case 463C−03 RB751S40T1 40

DAN222M3T5G

Abstract: m1n9
Contextual Info: DAN222M3T5G Product Preview Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−723 package which is designed for low

MARKING 6N

Contextual Info: MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 Digital Transistors BRT R1 = 100 kW, R2 = 100 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

MUN5130

Contextual Info: MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors BRT R1 = 1 kW, R2 = 1 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

marking 8F

Abstract: marking A8F NSBC143TF3 8F sot23
Contextual Info: MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3 Digital Transistors BRT R1 = 4.7 kW, R2 = 8 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

Contextual Info: MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

Contextual Info: mESD3.3DT5G SERIES ESD Protection Diodes In Ultra Small SOT−723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board

esd7l5.0dt5g

Abstract: working OF IC 723
Contextual Info: ESD7L5.0DT5G Transient Voltage Suppressors ESD Protection Diodes with Ultra−Low Capacitance The ESD7L5.0DT5G is designed to protect voltage sensitive components from damage due to ESD in applications that require ultra low capacitance to preserve signal integrity. Excellent clamping

IC 723 pin out diagram

Abstract: BC856BM3T5G
Contextual Info: BC856BM3T5G Preferred Devices General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT−723 which is designed for low power surface mount applications. • This is a Pb−Free Device

631AA-01

Contextual Info: ESD7L5.0DT5G Transient Voltage Suppressors ESD Protection Diodes with Ultra−Low Capacitance The ESD7L5.0DT5G is designed to protect voltage sensitive components from damage due to ESD in applications that require ultra low capacitance to preserve signal integrity. Excellent clamping