6428A Search Results

2N6428

Abstract: as dc hfe nv 2N6428A 2N5088
Contextual Info: 2N6428/6428A 2N6428/6428A Amplifier Transistor • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

2N6428A

Contextual Info: 2 N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR T O -92 • C ollector-E m itter Voltage: VCeo= 50V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage

Contextual Info: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage

Contextual Info: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • C ollector-E m itter Voltage: V C e o = 50V • C ollecto r D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage

6428A

Abstract: 2N6428 2n5088 transistor 2N5088 2N6428A N6428
Contextual Info: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • C ollector-E m itter Voltage: V Ceo= 50V • C ollector Dissipation: P c m a x = 62 5 m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage

Contextual Info: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage

2N6428

Abstract: 2n5088 transistor 2N6428A 2N5088
Contextual Info: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V c e o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Symbol Rating Unit Vceo V ceo 60 50 6 200 625 150

Contextual Info: 2 N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V ceo =50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Symbol Rating Unit VcBO V ceo V ebo lc Pc Tj Tstg 60

2N6428

Contextual Info: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Coilector-Emitter Voltage: V c e o * 50V • Collector Dissipation: Pc max ” 625mW ABSOLUTE MAXIMUM RATINGS Characteristic (T a» 2 5 1 ;) Rating Unit 60 50 6 200 625 150 -55 -150

Transistor TT 2246

Abstract: TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ
Contextual Info: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − April 24, 2005 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A EM3−2.1 FZNG 3/SOT−23 MAX 1916 ZT 1111 6/SOT−23

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

Contextual Info: 6428A tm NPN Epitaxial Silicon Transistor Features • This device is designed for high gain, general purpose amplifier applications at collector currents from 1uA to 200 mA. TO92 1 2 3 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted

2N6428

Contextual Info: MOTORCLA SC XSTRS/R 12E D I F fe,3b7254 QOaSf lE] , M A X I M U M R A T IN G S Sym bol V a lu e C otle c tor-E m itte r V o ltag e R a ting VCEO 50 U n it Vdc Collector-B ase V o lta g e VCBO 60 V dc E m itter-B ase V o ltag e Ve b o 6 .0 V dc C ollec to r C u rre n t — C ontin uous

KSA640

Abstract: KSP4250A
Contextual Info: FUNCTION GUIDE TRANSISTORS 1.2 Low Noise Transistors 1.2.1 SOT-23 Type Transistors Condition NF dB Device and Polarity (Marking) Condition Frequency Condition hFE VCE(satXV) •b (mA) MIN MAX lc (mA) KST6428(1 K) 4 Audio 50 0.2 5 0.1 250 650 100 5 KST2484(1U)

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905