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    65 NM CMOS Search Results

    65 NM CMOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC74HC14AF
    Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOP14 Visit Toshiba Electronic Devices & Storage Corporation
    74VHCT541AFT
    Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Octal Buffer, TSSOP20B Visit Toshiba Electronic Devices & Storage Corporation
    TC4069UBP
    Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, DIP14 Visit Toshiba Electronic Devices & Storage Corporation
    TC74HC04AP
    Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Hex Inverter, DIP14 Visit Toshiba Electronic Devices & Storage Corporation
    74HC14D
    Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOIC14 Visit Toshiba Electronic Devices & Storage Corporation

    65 NM CMOS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GSM transmitter receiver

    Abstract: GSM Transceiver chip GSM radio Transceiver chip NS3251 polar loop transmitter digrf
    Contextual Info: Product Brief NS3251 65 nm GSM/GPRS/EDGE Quad-Band CMOS Transceiver System-on-a-Chip with DigRF Interface Features Benefits • True Quad-Band Band GSM/GPRS/EDGE Capability •  65 nm CMOS Compatible with High Performance Digital Baseband Cores Fully Integrated Single-Chip GSM/GPRS/EDGE


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    NS3251 GSM transmitter receiver GSM Transceiver chip GSM radio Transceiver chip NS3251 polar loop transmitter digrf PDF

    broadcom cellular transceiver

    Abstract: BCM2085 DigRF polar modulator transceiver Broadcom cellular CORDIC based direct digital frequency synthesizer polar loop transmitter circuit diagram transceiver signal gsm polar architecture gmsk transceiver DAC
    Contextual Info: BCM2085 Brief 65-nm CMOS DigRF EDGE CELLULAR TRANSCEIVER SUMMARY OF BENEFITS FEATURES • Quad-band CMOS EDGE/GPRS RF transceiver • Advanced 65-nm standard digital CMOS design for lowest • Supports multislot GPRS and EDGE operation up to Class 34 • Innovative polar transmit architecture


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    BCM2085 65-nm BCM2085 2085-PB00-R broadcom cellular transceiver DigRF polar modulator transceiver Broadcom cellular CORDIC based direct digital frequency synthesizer polar loop transmitter circuit diagram transceiver signal gsm polar architecture gmsk transceiver DAC PDF

    2015 static ram

    Abstract: Position Estimation VIRTEX-5 DDR2 DDR3 constraints low power and area efficient carry select adder nmos 90nm
    Contextual Info: White Paper 40-nm FPGA Power Management and Advantages The 40-nm process offers clear benefits over prior nodes, including the 65-nm node and the more recent 45-nm node. One of the most attractive benefits is higher integration, which enables semiconductor manufacturers to pack greater


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    40-nm 65-nm 45-nm 2015 static ram Position Estimation VIRTEX-5 DDR2 DDR3 constraints low power and area efficient carry select adder nmos 90nm PDF

    SSTL-18

    Abstract: SIGNAL PATH designer
    Contextual Info: Cyclone III Simultaneous Switching Noise SSN Design Guidelines Application Note 508 December 2007, ver. 1.0 Introduction Low-cost FPGAs designed on 90-nm and 65-nm process technologies are made to support high performance applications with system clocks and


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    90-nm 65-nm SSTL-18 SIGNAL PATH designer PDF

    Cell Broadband Engine CMOS SOI 65 nm Hardware Initialization Guide

    Abstract: Cell Broadband Engine Hardware Initialization Guide transistor d880 t d880 DL-0159 DL-0178 d880 transistor toshiba f630 Rambus XDR cell broadband
    Contextual Info: Title Page Cell Broadband Engine CMOS SOI 65 nm Hardware Initialization Guide Version 1.01 June 8, 2007—Preliminary Copyright and Disclaimer Copyright International Business Machines Corporation, Sony Computer Entertainment Incorporated, Toshiba Corpora-


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    2007--Preliminary DL-0178) Cell Broadband Engine CMOS SOI 65 nm Hardware Initialization Guide Cell Broadband Engine Hardware Initialization Guide transistor d880 t d880 DL-0159 DL-0178 d880 transistor toshiba f630 Rambus XDR cell broadband PDF

    U2740B-FP

    Abstract: NPN planar RF transistor 16 bit ic rf encoder programmable read write transponder transistor C892 e5550F-S8 M44C0W RF ENCODER RF 125khz receiver ir preamplifier
    Contextual Info: Tem ic S e m i c o n d u c t o r s Selector Guide Remote Control Part Number Function Key Features Package IR Transm itter / Receiver BPV23NF PIN diode IR photo detector, 875 to 950 nm, sensitivity typical 65 ^A TSHA520. IR emitter family High efficiency, ± 12°, 875 nm


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    BPV23NF TSHA520. TSHA550. U426B-FP U2535B-FP U2538B-FP BFQ62 QFP64 PLCC44 DIP40 U2740B-FP NPN planar RF transistor 16 bit ic rf encoder programmable read write transponder transistor C892 e5550F-S8 M44C0W RF ENCODER RF 125khz receiver ir preamplifier PDF

    d880

    Abstract: transistor d880 d880 datasheet D880 pin out DL-0159 XDR Rambus d880 y sony x35 D870 d880 transistor
    Contextual Info: Title Page PowerXCell 8i CMOS SOI 65 nm Hardware Initialization Guide Version 1.2 December 8, 2008 Copyright and Disclaimer Copyright International Business Machines Corporation 2007, 2008 All Rights Reserved Printed in the United States of America December 2008


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    Contextual Info: BCM2070 Brief BLUETOOTH®2.1 + EDR SINGLE-CHIP HCI SOLUTION SUMMARY OF BENEFITS FEATURES • Processed with 65-nm LP CMOS technology power consumption, and highest • Smallest packages, lowest ® • Built-in power amplifier to support class 1 transmit output power


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    BCM2070 65-nm BCM2070 2070-PB01-R PDF

    Contextual Info: NM24C65 65,536-Bit Standard 2-Wire Bus Interface Serial EEPROM with Write Protect SEM ICONDUCTOR TM NM24C65 65,536-Bit Standard 2-Wire Bus Interface Serial EEPROM with Write Protect General Description: Features: The NM 24C 65/C65L/C65LZ devices are 65,536 bits of CMOS


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    NM24C65 536-Bit 65/C65L/C65LZ PDF

    STA5630

    Abstract: QFN-32 power supply 12v tcxo 16.368MHz
    Contextual Info: STA5630 Low power GPS RF front-end Data brief Features • Integrated LNA ■ Low power consumption < 25 mW ■ 1.8 V supply voltage ■ GPS and Galileo compliant ■ Minimum external components ■ Serial interface ■ 3 bits A/D converter ■ CMOS 65 nm technology


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    STA5630 QFN-32 VFQFPN32 STA5630 power supply 12v tcxo 16.368MHz PDF

    Gigabit Ethernet SFP broadcom

    Abstract: BCM8752 clause 37 sfp 10 gbps MDIO clause 45 xfi to xfi Cl37 1000BASE-X scrambler cl36
    Contextual Info: BCM8752 Brief DUAL-CHANNEL 10 GBE SFI-TO-XFI PHY WITH EDC SUMMARY OF BENEFITS FEATURES • Dual-channel SFI-to-XFI Physical Layer PHY developed in • Single-reference clock input, enables use of a low-cost 156.25 low-power 65 nm CMOS process technology


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    BCM8752 64B/66B BCM8752 121-pin 8752-PB00-R Gigabit Ethernet SFP broadcom clause 37 sfp 10 gbps MDIO clause 45 xfi to xfi Cl37 1000BASE-X scrambler cl36 PDF

    BCM8750

    Abstract: xfi to xfi 10G BIST PRBS clause 37 SFP CML 1000BASE-X microcontroller optics fiber gearbox Gigabit Ethernet SFP broadcom
    Contextual Info: BCM8750 Brief DUAL-CHANNEL 10-GBE SFI-TO-XFI PHY WITH EDC SUMMARY OF BENEFITS FEATURES • Dual-channel SFI-to-XFI Physical Layer PHY developed in • Single-reference clock input, enables use of a low-cost 156.25 low-power 65 nm CMOS process technology


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    BCM8750 10-GBE interfac64B/66B BCM8750 121-pin 8750-PB02-R xfi to xfi 10G BIST PRBS clause 37 SFP CML 1000BASE-X microcontroller optics fiber gearbox Gigabit Ethernet SFP broadcom PDF

    hearing aids

    Abstract: low power hearing aids transistor hearing aid digital hearing aids
    Contextual Info: Wafer technologies for digital hearing aids Ultra low power integrated solutions in 65 nm technology Today’s semiconductor technologies permit more and more functions to be embedded in smaller devices, greatly improving the performance and comfort of hearing aids.


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    FLHEARMED0808 hearing aids low power hearing aids transistor hearing aid digital hearing aids PDF

    STA5630

    Abstract: 4 MHz tcxo Analog Marking Information st marking code QFN-32 power supply 12v V18-IO VFQFPN32 a1 lna
    Contextual Info: STA5630 Low power GPS RF front-end Data brief Features • Integrated LNA ■ Low power consumption <25 mW ■ 1.8 V supply voltage ■ GPS and Galileo compliant ■ Minimum external components ■ Serial interface ■ 3 bits A/D converter ■ CMOS 65 nm technology


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    STA5630 QFN-32 VFQFPN32 STA5630 4 MHz tcxo Analog Marking Information st marking code power supply 12v V18-IO VFQFPN32 a1 lna PDF

    BCM59035

    Abstract: diagram circuit usb mp3 player with radio fm lcd Broadcom BCM21331 BCM21331 BCM2048 usb video player circuit diagram Broadcom WLAN transceiver bcm2133 echo mixer circuit diagram BCM2085
    Contextual Info: BCM21331 Single-Chip 65-nm EDGE Baseband + RF + Multimedia SUMMARY OF BENEFITS FEATURES • • • Enables high-performance, low-cost EDGE/GPRS handset design General Characteristics • Single-chip, single-die, Class 33, 4-band, EDGE/GPRS baseband processor


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    BCM21331 65-nm 480-Mbps 208-MHz 407-pin 21331-PB02-R BCM59035 diagram circuit usb mp3 player with radio fm lcd Broadcom BCM21331 BCM21331 BCM2048 usb video player circuit diagram Broadcom WLAN transceiver bcm2133 echo mixer circuit diagram BCM2085 PDF

    bcm4323

    Abstract: bcm4322 BCM94322 BROADCOM BCM4323 BROADCOM BCM4322 BCM94323 BCM94703NR BCM94322HMC bcm94322mc BROADCOM BCM94322
    Contextual Info: BCM4322/BCM4323 Brief 802.11n DRAFT 2.0 SINGLE-CHIP FEATURES • Single-chip all-in-one die Baseband/MAC/Radio for 2x2 802.11n applications • Advanced 65 nm CMOS process for lowest power consumption and highest integration • 802.11n Draft 2.0 compliant Wi-Fi solution. Fully compatible


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    BCM4322/BCM4323 11a/b/g BCM94322MP--Mini BCM94322MC--PCIe BCM94322HMC--PCIe BCM94322USB--USB 4323-PB01-R bcm4323 bcm4322 BCM94322 BROADCOM BCM4323 BROADCOM BCM4322 BCM94323 BCM94703NR BCM94322HMC bcm94322mc BROADCOM BCM94322 PDF

    F0706

    Abstract: MoSys CS201 MoSys 1T sram "Single-Port RAM"
    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20211-1E Semicustom CMOS Standard Cell CS201 Series • DESCRIPTION The CS201 series of 65 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption and higher integration. These cells offer the minimum level of leakage current in the semiconductor


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    DS06-20211-1E CS201 F0706 F0706 MoSys MoSys 1T sram "Single-Port RAM" PDF

    BroadR-Reach

    Abstract: BCM54881 s3mii twisted pair cable broadR-Reach 100BASE-FX
    Contextual Info: BCM54881 OCTAL 10/100BASE-TX ETHERNET BroadR-Reach TRANSCEIVER FEATURES SUMMARY OF BENEFITS • Low-cost, and low-power 8-port integration enables • Eight 10BASE-T/100BASE-TX and BroadR-Reach™ single-row, high-port density switches. transceivers in a single fully integrated 65 nm CMOS chip


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    BCM54881 10/100BASE-TX 10BASE-T/100BASE-TX 1000m, 54881-PB00-R BroadR-Reach BCM54881 s3mii twisted pair cable broadR-Reach 100BASE-FX PDF

    bcm2048

    Contextual Info: BCM2153 Brief 7.2-MBPS HEDGE 65-nm MULTIMEDIA BASEBAND PROCESSOR SUMMARY OF BENEFITS FEATURES • • • • • Enables the highest performance yet lowest cost HSDPA/EDGE handset design General characteristics • Single-chip, single-die, 7.2-Mbps HSDPA/EDGE baseband processor


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    BCM2153 65-nm 480-Mbps 312-MHz ARM11â 208-Mhz 2153-PB02-R bcm2048 PDF

    transistor 945P

    Abstract: 945p TRANsISTOR Socket 775 VID pinout socket 775 pinout bsel 775 MOTHERBOARD CIRCUIT diagram 945p socket am3 pinout LGA775 ITT DIODE W7 intel 775 motherboard diagram
    Contextual Info: Intel Celeron® D Processor 300Δ Sequence Datasheet – On 65 nm Process in the 775-Land Package March 2007 Document Number: 311826-005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR


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    775-Land transistor 945P 945p TRANsISTOR Socket 775 VID pinout socket 775 pinout bsel 775 MOTHERBOARD CIRCUIT diagram 945p socket am3 pinout LGA775 ITT DIODE W7 intel 775 motherboard diagram PDF

    bcm59035

    Abstract: MMCV4 ARM11 processor broadcom bcm4325 Broadcom BCM2153 3g hsdpa signal antenna Diagram BCM4325 5 band equalizer 428PI 2153p
    Contextual Info: BCM2153 Brief 7.2-MBPS HEDGE 65-NM MULTIMEDIA BASEBAND PROCESSOR SUMMARY OF BENEFITS FEATURES • • • • General characteristics • Single-chip, single-die, 7.2-Mbps HSDPA/EDGE baseband processor • Complete system-on-a-chip, high-end multimedia with advanced audio,


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    BCM2153 65-nm 480-Mbps 312-MHz ARM11 2153-PB03-R bcm59035 MMCV4 ARM11 processor broadcom bcm4325 Broadcom BCM2153 3g hsdpa signal antenna Diagram BCM4325 5 band equalizer 428PI 2153p PDF

    cpu socket mPGA479m

    Abstract: Transistor C4E intel 945 MOTHERBOARD SERVICE MANUAL intel core solo
    Contextual Info: Intel Core Duo Processor and Intel® Core™ Solo Processor on 65 nm Process Datasheet September 2006 Document Number: 309221-005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR


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    bcm2048

    Abstract: Broadcom BCM2153 arm11 MIPS
    Contextual Info: BCM2153 Brief 7.2-MBPS HEDGE 65-nm MULTIMEDIA BASEBAND PROCESSOR SUMMARY OF BENEFITS FEATURES • • • • • Enables the highest performance yet lowest cost HSDPA/EDGE handset design General characteristics • Single-chip, single-die, 7.2-Mbps HSDPA/EDGE baseband processor


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    BCM2153 65-nm 480-Mbps 312-MHz ARM11â 208-Mhz 2153-PB01-R bcm2048 Broadcom BCM2153 arm11 MIPS PDF

    Contextual Info: BCM21331 SINGLE-CHIP 65-nm EDGE BASEBAND + RF + MULTIMEDIA SUMMARY OF BENEFITS FEATURES • • • • • Enables the highest performance and lowest cost EDGE/GPRS handset design General characteristics • Single-chip, single-die, Class 33, 4-band, EDGE/GPRS baseband


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    BCM21331 65-nm 480-Mbps 208-MHz 389-pin 21331-PB01-R PDF