655B Search Results

2SJ530

Abstract: Hitachi DSA00336
Contextual Info: 2SJ530 L ,2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching. Outline DPAK–2 4 4 D 1 2 G 1 2 S 3

Hitachi 2SJ

Abstract: Hitachi DSA002757
Contextual Info: 2SJ530 L , 2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching. Outline 2SJ530(L),2SJ530(S) Absolute Maximum Ratings (Ta = 25°C)

DDR2-667

Contextual Info: PRELIMINARY DATA SHEET 4GB Fully Buffered DIMM EBE41FE4ACFT Specifications Features • Density: 4GB • Organization ⎯ 512M words x 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package ⎯ 240-pin fully buffered, socket type dual in line

DDR2-667

Abstract: EDE5108AJSE-6E-E E1088E20
Contextual Info: PRELIMINARY DATA SHEET 1GB Fully Buffered DIMM EBE11FD8AJFT Specifications Features • Density: 1GB • Organization  128M words x 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line

e1007

Abstract: EBE11FD8AHFD-6E-E DDR2-533 DDR2-667
Contextual Info: PRELIMINARY DATA SHEET 1GB Fully Buffered DIMM EBE11FD8AHFD Specifications Features • Density: 1GB • Organization  128M words x 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line

DDR2-667

Abstract: EDE5108AJSE-6E-E EBE51FD8AJFT
Contextual Info: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AJFT Specifications Features • Density: 512MB • Organization  64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line

H4N7

Abstract: 655B bd 689
Contextual Info: 53*~35 8696.>?<2 5645 ;:A2< <27.B 3GDRSPGQ X 65B nrdo^cdib ^\k\]dgdot X Ljib `i_pm\i^` .Mdi3 6551555 `g`^omd^\g jk`m\odjin/ X Ji_pnomt no\i_\m_ = jm 66 mjpi_ o`mhdi\gn X Sj^f`on \q\dg\]g` X Wdoc kpnc ]pooji X Shjf` ^jq`m otk` \q\dg\]g` X Fiqdmjih`io\g amd`i_gt kmj_p^o .RjIS ^jhkgd\io/

Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb E-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

E1242E20

Abstract: 1024M DDR2-667 D40CS
Contextual Info: PRELIMINARY DATA SHEET 8GB Fully Buffered DIMM EBE82FF4A1RQ Specifications Features • Density: 8GB • Organization  1024M words x 72 bits, 4 ranks • Mounting 36 pieces of 2G bits DDR2 SDRAM with DDP FBGA  DDP: 2 pieces of 1Gb chips sealed in one package

EDE1108ACSE-6E-E

Abstract: DDR2-667 ebe21fe8acfr-6e-e
Contextual Info: DATA SHEET 2GB Fully Buffered DIMM EBE21FE8ACFR Specifications Features • Density: 2GB • Organization  256M words x 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line

DDR2-667

Abstract: e1010e
Contextual Info: PRELIMINARY DATA SHEET 4GB Fully Buffered DIMM EBE41FE4ABHT EBE41FE4ABHL Specifications Features • Density: 4GB • Organization  512M words x 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM with sFBGA • Package  240-pin fully buffered, socket type dual in line

e1240

Abstract: EBE81FF4ABHT 1024M DDR2-667
Contextual Info: PRELIMINARY DATA SHEET 8GB Fully Buffered DIMM EBE81FF4ABHT Specifications Features • Density: 8GB • Organization  1024M words x 72 bits, 2 ranks • Mounting 36 pieces of 2G bits DDR2 SDRAM with sFBGA • Package  240-pin fully buffered, socket type dual in line

E1001E

Abstract: DDR2-533 DDR2-667 ELPIDA ddr2 elpida DDR2 routing
Contextual Info: PRELIMINARY DATA SHEET 2GB Fully Buffered DIMM EBE21FD4AHFT EBE21FD4AHFE EBE21FD4AHFL Specifications Features • Density: 2GB • Organization  256M words x 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line

HYMP151F72CP8

Abstract: HYMP151F72CP4
Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb C-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb B-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

Contextual Info: DATA SHEET 4GB Fully Buffered DIMM EBE41FE4ACFR Specifications Features • Density: 4GB • Organization  512M words x 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line

Contextual Info: DATA SHEET 4GB Fully Buffered DIMM EBE42FE8ACFR Specifications Features • Density: 4GB • Organization  512M words x 72 bits, 4 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line

BGA676

Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
Contextual Info: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18

hynix DDR2 800 1GB SO DIMM

Abstract: HMP564F7FFP8C
Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb F-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

G1966M SAW FILTER

Abstract: 8 PIN SMD IC 314-150 k3264 K2977M L9453M ofw g 3254 b684 saw filter k6272k K9260M SIEMENS saw filter 44 MHz M3951M
Contextual Info: Siemens Matsushita Components One Port Resonators Center Frequency MHz 239,75 297,80 303,83 304,25 304,30 308,50 314,50 315,00 315,00 315,00 345,00 390,00 392,85 403,05 403,55 407,25 417,50 418,00 423,17 Type Frequency Frequency Insertion Tolerance Tolerance Attenuation

omron 8567

Abstract: crouzet 88 810.1 AQH2223 equivalent OMRON 1230 opto 12VDC sf 249 crouzet 88 810.0 Automation Controls panasonic - elevator door controller manual seiko lcd m3214 crouzet 88 810.0 coto reed relay 2063
Contextual Info: ELECTROMECHANICAL Switches Basic / Snap Switches Cherry Electrical Products . . . . . . . . . . 1819, 1820, 1821 Mountain Switch . . . . . . . . . . Available at mouser.com Honeywell . . . . . . . . . . . . . . . . . . 1822, 1823, 1824 Omron . . . . . . . . . . . . . 1825, 1826, 1827, 1829, 1830

DDR2-533

Abstract: DDR2-667
Contextual Info: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AHFD Specifications Features • Density: 512MB • Organization  64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line

MPC5555

Abstract: MPC555LFCVR40 8011 dfn MPC555LFMVR40 3 pin 433 mhz rf module MPC555LFAZP40 SC51165 603 6xe
Contextual Info: 03&  03& 86 5 6 0$18$/ 5HYLVHG  2FWREHU   &RS\ULJKW  027252/$ $OO 5LJKWV 5HVHUYHG 03&  03& 86(5©6 0$18$/ 5HYLVHG  2FWREHU   &RS\ULJKW  027252/$ $OO 5LJKWV 5HVHUYHG 3DUDJUDSK 1XPEHU 7$%/( 2 &217(176 35()$&( 3DJH

Contextual Info: PRELIMINARY DATA SHEET 2GB Fully Buffered DIMM EBE21FD4AGFD EBE21FD4AGFN Specifications Features • Density: 2GB • Organization  256M words x 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line