65764 Search Results

MATRA

Contextual Info: Te m ic HM 65764 MATRA MHS 8K x 8 High Speed CMOS SRAM Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using MHS high performance CMOS technology. Access times as fast as 15 ns are available with maximum power consumption of only 743 mW.

65764 ram

Contextual Info: Tem ic L 65764 Semi co n du ct o rs 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Description The L 65764 is a high speed CMOS static RAM organized

Contextual Info: Tem ic S e m i c o n d u c t o r s Ordering Information High-Speed, Low-Power, General-Purpose Memories Package HM1 Device 65764 Grade H Level - 5R i D evice type 0 1 3 4 T = TP= U = C = _ 2 CM O S STA N D ARD B - High speed - low pow er C - R elaxed version

1202z

Abstract: MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3
Contextual Info: Tem ic SMD Semiconductors Standard Military Drawings SMD Number Features TEMIC Part Number Package 5962-3829409MXA 55 ns SKxH SRAM HM Î E-65764N/883 CDIL28 60Í mils 5962-3829409MYC 55 ns 8Kx8 SRAM HM4-65764N/883 LCC32 5962-3829409MZA 55 ns 8Kx8 SRAM HMI-65764N/883

Contextual Info: March 1994 DATA SHEET_ HM 65764 8 Kx 8 HIGH SPEED CMOS SRAM FEATURES . . . . 300 AND 600 MILS WIDTH PACKAGE . TTL COMPATIBLE INPUTS AND OUTPUTS . ASYNCHRONOUS . CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE

Contextual Info: 41E D S ñ b ñ 4Sb GQDS107 3Ö7 • MMHS January 1991 MATRA M H S HM 65764 HI-REL DATA SHEET 8 kx 8 HIGH SPEED CMOS SRAM FEATURES . FAST ACCESS TIME : 25*/35/45/55 ns 300 AND 600 MILS WIDTH PACKAGE . LOW POWER CONSUMPTION ACTIVE : 380 mW typ STANDBY : 110 mW (typ)

Contextual Info: 4TE 3> • Söbfl4Sb Ü O D im 474 H H MHS ^ 6 - Z 3 - / Z - nllll H w l l S B MATRA September 1990 M H S HM 65764 DATASHEET 8 k X8 HIGH SPEED CMOS SRAM FEATURES . ■ . . ■ FAST ACCESS TIME INDUSTRIAL/MILITARY : 35/45/55 ns max COMMERCIAL : 15*/20/25/35/45/55 ns (max)

Contextual Info: M l M A I S September 1989 HM 65764 DATASHEET 8 k X 8 HIGH SPEED CMOS SRAM FEATURES 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY FAST ACCESS TIME

Contextual Info: Tem ic L 65764 MATRA MHS 8 K X 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 x 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip

hm3-65764

Abstract: 65764 65764 ram
Contextual Info: T-46-23-12 HM 65764 8K x 8 HIGH SPEED CMOS SRAM OCTOBER 1987 Features • • • • • • • • FAST ACCESS TIME : 35/45/55 ns max STANDBY CURRENT : 20 mA OPERATING CURRENT : 150 mA ASYNCHRONOUS INPUTS TTL COMPATIBLE INPUTS AND OUTPUTS SINGLE 5 VOLT SUPPLY

65764

Abstract: MATRA MHS HM* 28 pins SOIC pack
Contextual Info: HM 65764 MATRA MHS 8K x 8 High Speed CMOS SRAM Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using MHS high performance CMOS technology. Access times as fast as 15 ns are available with maximum power consumption of only 743 mW.

1117hm

Abstract: SMD-5962-38294
Contextual Info: T em ic HM 65764 S emi co nd uc t or s 8K X 8 High Speed CMOS SRAM Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using

Contextual Info: electronic June 1992 HM 65764 HI-REL DATA SHEET 8 k X 8 HIGH SPEED CMOS SRAM FEATURES . FAST ACCESS TIME : 25*/35/45/55 ns • 300 AND 600 MILS WIDTH PACKAGE , LOW POWER CONSUMPTION ACTIVE : 380 mW typ STANDBY: 110 mW(typ) . TTL COMPATIBLE INPUTS AND OUTPUTS

Contextual Info: IlM l DATA SHEET_ HM 65764 8 Kx 8 HIGH SPEED CMOS SRAM FEATURES . . . . 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE . SINGLE 5 VOLT SUPPLY

Contextual Info: T em ic HM 65764 MATRA MHS 8K x 8 High Speed CMOS SRAM Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using MHS high performance CMOS technology. Access times as fast as 15 ns are available with maximum

F 10 L 600

Abstract: DIL 330 65764 z1015
Contextual Info: L 65764 MATRA MHS 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 × 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip

dda 009

Contextual Info: Temic L 65764 S e m ic o n d u c t o r s 8 K X 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 x 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip

SMD-5962-38294

Contextual Info: L 65764 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 x 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip select CS1 , an active high chip select (CS2), an active

Contextual Info: T e m ic MATRA MHS_HM 65764 8K x 8 High Speed CMOS SRAM Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using MHS high performance CMOS technology. Access times as fast as 15 ns are available with maximum

b2045

Contextual Info: • Bifurcated contacts provide redundant connection to p.c. board. • Uniform insertion and withdrawal forces. • Sight holes in cable cover allow for inspection after assembly. • Covers supplied in choice of closed-end to protect the exposed ends of the flat flexible cable or with

EC3H03B

Contextual Info: Ordering number : ENN6576 EC3H03B NPN Epitaxial Planar Type Silicon Transistor EC3H03B VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications Features 0.35 0.2 0.25 [EC3H03B] 0.15 0.15 0.05 1 2 3 0.5 1.0 0.4 0.65 • 0.05 • unit : mm 2183 0.25 •

B 58290

Abstract: 58550
Contextual Info: PRODUCT NO SEE TABLE OPTIONAL POLARIZING KEY P/N 67107 1. CONNECTORS ARE PACKED IN LOTS OF 100. A. OASH 054 THRU 061 ARE PACKAGED IN TUBES. B. DASH 154 AND 163 ARE PACKAGED IN TUBES. 2. MATERIAL: A. SUB-ASS'V: GLASS FILLED POLYESTER. FLAME RETARDANT PER UL-94V-0. COLOR: SEE TABLE.

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

Burr Brown 3510am

Abstract: ner eN8 capacitor 3421J A5 GNC mosfet OPA103 OPA104 TF 6221 HEN LED display LOG100 3510CM Burr Brown OPA Application Reference
Contextual Info: BURR-BROWN Internatlenal Airport Industrial Park - P.0. Box 11400 - Tucson. Arizona B5734 Tel [602 746-1111 - TW X: 910-952-1111 - Cable: BBRCORP - Telex: 66-6491 PR O D U C T DATA BOOK The information in this publication has been carefully checked and is believed to be reliable; however, no responsibility is assumed for