658 ITT Search Results

RCA-41024

Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 41024 transistor C4 016 rca 0190 transistor 4-1024
Contextual Info: File No. 658 RF Power Transistors Solid State Division 4 1024 1-W, 1-GHz Silicon N-P-N Overlay Transistor High-Gain Device for Class B- or Co­ operation in U H F Circuits Features: • 1-watt output min. at 1 GHz 5 dB gain ■ For sonde applications 0.3-w att ou tput ty p . at 1.68 GHz (V q q = 20 V )

pj 69 SMD diode

Abstract: smd g2b 2yl1 54HC138 5N 3011 smd diode marking g2a DIODE S2B smd y12 pj 87 diode I52A
Contextual Info: MIL-M-38510/658 19 D e c e m b e r 1 9 8 6 MILITARY SPECIFICATION M I C R O C I R C U I T S , DI GI TA L, HIGH SPEED, CMOS, DECODERS, MONOLITHIC SILICON, POSITIVE LOGIC v ' T h i s s p e c i f i c a t i o n 1s a p p r o v e d ments and Agencies of th e 1.

RC4227

Contextual Info: - 281 - \m, mm, m ?* •/ bw± RC4227 Raytheon 2 • A ^ j S I K I S r i f : 3. 8 n V / / Hz 0 A t l t 7 - b y • m ss, m % f t • # A £ f § T O P V IE W ±18 V 0.7 V 0—+70 r m k iiw i m ^ iu jg 0—^70 if s s * 658 H > Sk H ±18 0.7 a -h m u

BF657

Abstract: BF658
Contextual Info: BF 657 BF 658 BF 659 SILICON PLANAR NPN P R E L IM IN A R Y D A T A M E D IU M POWER V ID E O A M P L IF IE R S T h e B F 6 5 7 , B F 6 5 8 and B F 6 5 9 are silico n planar epitaxial N P N transistors in T O - 3 9 metal case. T h e y are p a rtic u la rly designed f o r a pplication w ith p re cision " I N - L I N E " large

HDC-2815

Abstract: HDC-8012 hdc8012 HDA-10013 HDC-10015 HDA-10016CR HDC-8015 HDA-10016DR HDA-4012 HDA-5626DR
Contextual Info: 1 Digit Numeric Displays RoHS Conformity 0.28" ~ 0.31" Color Device No Front View lF=20mA/segment Ta=25°C Common Common Anode Cathode Wavelength nm Brightness (ucd) Typical Surface, Emitter VF XÓ Xp Segment Minimum Typical (V) 5 . 40 6.00 3. 0mi n "1I i^n

hda-5216cr

Abstract: HDC-2815 DA 2822 M HDA-4315 hda-5623 hda-2812 HDC500 HDA-8015 8015 j HDC-5622
Contextual Info: 1 Digit Numeric Displays RoHS C on form ity 0 .28 " ~ 0 .31 " lF=20mA/segment Device No Color Wavelength nm VF Front View Common Common Surface, Anode Cathode Segment Brightness (ucd) Typical Xp Emitter Ta=25°C /d Minimum Typical (V) 5 .4 0 . 6 .0 0 3.0m in

hda-5216cr

Abstract: HDA-4012 HDA-3645 hda-5623 HDA-2812 HDC-2815 HDC-8015 HDA-4315 HDC-5216CR HDA-5013
Contextual Info: 1 Digit Numeric Displays RoHS C on form ity 0 .28 " ~ 0 .31 " lF=20mA/segment Device No Color Wavelength nm VF Front View Common Common Anode /d Xp Cathode Brightness (ucd) Typical Surface, Emitter Ta=25°C Minimum Typical Segment (V) 5.40 . 6.00 3.0min

SN74HC658

Abstract: HC659 HC658
Contextual Info: SN54HC658. SN54HC659, SN74HC658, SN74HC659 OCTAL BUS TRANSCEIVERS WITH PARITY Bus Transceivers w ith Inverting Outputs H C 6 5 8 or True Outputs ( H C 659) S N 5 4 H C 6 5 8 J J $ N 5 4 H C 6 & & '7 ^ y o f PACKAGE S N 7 4 H C 6 5 8 . S NJM HCfiöS - { ' DW 'jOB NJTJUcC k AGE

ms3187-12

Contextual Info: MIL-C-26482, Series 2 Connectors PV Protective Metal Caps Plugs .047 1,19mm Max. L .169 +_ .008 DIA. 4.29 + _ 0.20) A F H +.500 (12.7) -.250 (6.35) M CHAIN LENGTH Receptacles PVS 80 -12 C A MS 3180 -12 C A SERIES PREFIX PVS - ITT Cannon Prefix MS - Complies with MIL-C-26482 (Series 2)

Contextual Info: MIL-C-26482, Series I Connectors KPT/KPSE Dummy Receptacles KPT 15 - 12A How To Order * .140 RAD. MAX. SERIES PREFIX G DIA 4 HOLES DUMMY RECEPTACLE INDICATOR A DIA. SHELL SIZE MODIFICATIONS J E K F SERIES PREFIX KPT - ITT Cannon Prefix NOTE: For MS Version and additional finishes see PV catalog.

2N4258

Abstract: 2N4257 2N4258/A MM4257 2N2369 MM4258 MA661
Contextual Info: MM4257 SILICON MM4258 PNP SILICO N ANN U LA R . . . designed fo r low voltages. applications TRANSISTORS requiring high speed switching at PNP S IL IC O N • C ollector-E m itter Saturation Voltage — • Switching T im e s l c = 10 m Adc - V c E (s a t) - 0 .1 5 V d c (M ax) @ lc - 10 m Adc

B462G

Abstract: ba 658 B461G b461 Scans-048 DSAGER000159
Contextual Info: Vorläufige technische Daten B 461 G B462G Integsieste konfeaktlose magnetisch betätigte Schalkes Hall«Jäf£ekt mit Freigaheeingaag und offenes Kollektcwausgang, Wenn sin ausreichend gxoßes Magnetfeld vorhanden ist (B S B ^ ) und ein H«Signal am treigafoee ingang anliegt3 schaltet des

J103 transistor

Abstract: TL1-TL11 transistor bd136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor D e sig n e d fo r 24 V olt U H F la rg e -s ig n a l, c o m m o n em itte r, c la s s -A B lin e a r a m p lifie r a p p lic a tio n s in ind u stria l and c o m m e rcia l F M /A M e q u ip m e n t o p e ra tin g

HL6501MG

Contextual Info: HL6501MG Visible High Power Laser Diode for DVD-RAM HITACHI ADE-208-515F Z Preliminary 7th Edition February 1998 Description The HL6501MG is a 0.65 J i m band AlGalnP laser diode(LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as DVD-RAM. and

T30A1

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30TB-24 MEDIUM POWER SWITCHING USE INSULATED TYPE 1 • lc • V cex • hFE Collector c u rre n t. 30A 1 Collector-em itter v o lta g e . 1200V j DC current g a in . 75 j

C50U

Contextual Info: SGS-THOMSON M M § m [lO T « S B U W 92 FAST SWITCHING POWER TRANSISTOR • FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN TO -218 ABSOLUTE MAXIMUM RATINGS Sym bol P a ra m e te r V a lu e U n it VcEV C o lle cto r-e m itte r V oltage V Be = - 1.5 V

VDE0860

Abstract: IEC435 VDE0113 VDE0160 VDE0805 VDE0832 VDE0833 VDE0883 OPTO-ISOLATOR optoisolator MCT2E
Contextual Info: MOTOROLA • i S E M IC O N D U C TO R TECHNICAL DATA M C T2 M CT2E 6-P in D IP O p to is o la to rs Transistor Output These device s co n s is t o f a g a lliu m arsen id e in fra re d e m ittin g d io d e o p tic a lly c o u p le d to a m o n o lith ic s ilic o n p h o to tra n s is to r dete cto r.

Esan

Abstract: t33e
Contextual Info: E-SAN E L EC TR O N IC CO LTD EME D • 3D37M0E □ □ □ 0 0 E 5 T m Active Delay Line ECL Interface 33E Series Specifications: • Delay tolerance • • • • • • • • Rise time Operating Temp. Supply Voltage Logic 1 O utput Logic 0 O utput

620VDC

Abstract: 90E048 Esan
Contextual Info: E-SAN ELECTRO NIC CO LTD 24E ß a 3037MG2 00DG0S7 b Active Delay Line ECL 100K Series Interface • 24 Pin Dip Package Specifications: • Operating Temp. Range • Storage Temp. • Vee • Logic 1 Output • Logic 0 Output • Rise Time (20% to 8 0% )

Esan

Contextual Info: E-SAN ELECTRONIC CO LTD Active Delay Line ECL Interface Specifications: • Delay tolerance • Rise tim e • Operating Temp. • Supply Voltage • Logic 1 Output • Logic 0 Output • Logic 1 lutput • Logic 0 lutput • Power Dissipation 24E D ± 5% or 1 ns

A 564 transistor

Abstract: 3181 R33 transistor A 564
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

marking G4

Abstract: SP J TRANSISTOR MARKING transistor D 659 TRANSISTOR MARKING CODE "SP"
Contextual Info: FMG4A Transistor, digitai, dual, NPN, with 1 resistor Features Dimensions Units : mm • available in SMT5 (FMT, SC-74A) package • package marking: G4 • package contains two interconnected NPN digital transistors (DTC114TKA) FMG4A (SMT5) 2.9 ±0 .2 1.9 ±0 .2

7447

Abstract: 09585
Contextual Info: LASER COMPONENTS GmbH Address Wemer-von-Siemens-Str. 15 P.O. Box 1129 D-82140 Olching D-82133 Olching Phone+49-8142-28640 • F a x +49-8142-286411 E-Mail: info@lasercomponents.com • Web: www.lasercomponents.com Datasheet for Order , LC Order Part Customer

2SD552

Abstract: 2SB552 AC73
Contextual Info: lib TOSHIBA -CDISCRETE/OPTOl 9097250 T O S H I BA <DI S C R E T E / O P T O DE I ^ O T T E S O 5òC ' Cf" ' 07725 GDOTTSS j ’Z £5 _ _ SILICO N NPN TRIPLE DIFFU SED TYPE INDUSTRIAL APPLICATIONS _ Unit in mm HGIH POWER AMPLIFIER APPLICATIONS.