66A DIODES Search Results

Contextual Info: SCHOTTKY BARRIER DIODE C60P05Q C60P06Q 66A/50— 60V FEATURES • Similar to TO-247AC TO-3P Case ° Dual Diodes - Cathode Common ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency • High Surge Capability • 30 Volts through 60 Volts Types Available

C60P03Q

Abstract: C60P04Q
Contextual Info: SCHOTTKY BARRIER DIODE C60P03Q C60P04Q 66A/30~40V FEA TUR ES ° Similar to TO-247AC TO-3P Case ° Dual Diodes - Cathode Common Low forward Voltage Drop • Low Power L o s s , High Efficiency • High Surge Capability • 30 Volts through. 60 Volts Types Available

c60p06q

Abstract: diode 66a C60P05Q
Contextual Info: SCHOTTKY BARRIER DIODE 66A / 50~ 60v cboposq csopobq FEATURES “ Similar to TO-247AC TO-3P Case 5.3(.2Q9) 4.7U 85) o Dual Diodes - Cathode Common ° Low Forward Voltage Drop Low Power Loss, High Efficiency 2.24.087) 3.2U 26). 0.8(.031) M AX • High Surge Capability

C60P03Q

Contextual Info: SCHOTTKY BARRIER DIODE C60P03Q C60P04Q 66A/30— 40V 530091 FEATURES •1.7 1851 • Similar to TO-247AC (TO-3P Case L5.9(.ti26l . 3.61.142.1 r-.,A 5.?(.224) 5 3(.208) • Dual Diodes - Cathode Common N N 4.31.169» 3./(. 145Ì » Low forward Voltage Drop

C60P06Q

Contextual Info: SCHOTTKY BARRIER DIODE C60P05Q C60P06Q 66A/50— 60V FEATURES °Similar to TO-247AC TO-3P Case 5.31.209) 4.71.1851 . 15.91.626) I* 1 5 .3 Ï6 0 2 ) 5.7( 2241 5.3I.208I ° Dual Diodes - Cathode Common 3 6< 1 4 2 1 . ' 5 4( 1^4) ) O C ° Low Forward Voltage Drop

Contextual Info: H B 6 6 A 2 5 6 1 6 C A - 2 5 524,288Word X 8bit /262,144Word X 16bit High Density CMOS Static RAM Card ^ H IT A C H I Rev.O sep.10,1992 T he H B 66A 25616C A -25 is a high density 5 1 2 k W o rd X 8bit o r 256kW ord X 16bit static R A M Card, m ounted o f 4pieces 1M static R A M sealed in T S O P package.

SG-52 diode

Abstract: DDR4 pcb layout guidelines diode cross reference SL 1515 Ps3 MOTHERBOARD CIRCUIT diagram RG810 IMVP7 IMVP-7 ntc 33 0530
Contextual Info: L6718 Digitally controlled dual PWM with embedded drivers for VR12 processors Datasheet − preliminary data Features • VR12 compliant with 25 MHz SVID bus rev. 1.5 ■ Second generation LTB Technology ■ Very compact dual controller: – Up to 4 phases for core section with 2

L6718

Abstract: Ps3 MOTHERBOARD CIRCUIT diagram
Contextual Info: L6718 Digitally controlled dual PWM with embedded drivers for VR12 processors Datasheet − preliminary data Features • VR12 compliant with 25 MHz SVID bus rev. 1.5 ■ Second generation LTB Technology ■ Very compact dual controller: – Up to 4 phases for core section with 2

RG810

Abstract: DDR4 pcb layout guidelines intel VR12 PS3 motherboard Ps3 MOTHERBOARD CIRCUIT diagram DDR3 pcb layout motherboard intel IMVP7 l6718
Contextual Info: L6718 Digitally controlled dual PWM with embedded drivers for VR12 processors Datasheet − preliminary data Features • VR12 compliant with 25 MHz SVID bus rev. 1.5 ■ Second generation LTB Technology ■ Very compact dual controller: – Up to 4 phases for core section with 2

Contextual Info: Laser Diodes PL63/65/67 Series Visible Laser Diode Modules PD-LD Inc. offers a variety of packaging options for its’ Visible Series of laser diodes. These units are available in ready-to-use, fiber-coupled packages, including FC, ST, and SC receptacles, as well as fiber- pigtailed

battery 6lf22

Abstract: LCD 1604A 6Lf22 Tenma
Contextual Info: 72-7228 Digital Clamp Multimeter P/N: 110401100913 Model 72-7228 OPERATING MANUAL Model 72-7228: OPERATING MANUAL Table of Contents Title Page Overview Inspection Safety Information Rules For Safe Operation International Electrical Symbols The Meter Structure

CI 3060 elsys

Abstract: mav55 ECG592 1N416C microwave diode ecg 588 ci 3060 DIODE Z54 Z11A 1N415C diode Z6 DIODE
Contextual Info: M icrowave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IM PED. Q 30 MHz (Ohms) VSW R Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060

ge 142

Abstract: GA100TS60U
Contextual Info: PD -50055C GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GE 443

Abstract: GA100TS60U
Contextual Info: PD -5.055A PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA100TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GE 443

Abstract: GA100TS60U
Contextual Info: PD -5.055A PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA100TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

100L

Abstract: clamp meter schematic digital AC clamp meter schematic
Contextual Info: ES51967 6,600 Counts Auto DMM Features • 6,600 counts LCD display • 100L QFP package • 3V DC power supply • Conversion rate : 3 times/s • Full automatic measurement • Sleep state indicative signal output • Re-power on • On-chip buzzer driver

5 DIGIT SINGLE CHIP DIGITAL MULTIMETER

Abstract: digital AC clamp meter schematic 100L "Duty cycle measurement" V1815 beep 680k ohm resistor DIODE s4 66A
Contextual Info: ES51967 6,600 Counts Auto DMM Features • 6,600 counts LCD display • 100L QFP package • 3V DC power supply • Conversion rate : 3 times/s • Full automatic measurement • Sleep state indicative signal output • Re-power on • On-chip buzzer driver

clamp meter schematic

Abstract: ES51969 100L 660V power meters with displays tl0611 45-3-44 0.1m 250 MKT adp 200 Cyrustek
Contextual Info: ES51969 6,600 Counts Auto DMM • Auto power off 30min/15min Features • Sleep state indicative signal output • 6,600 counts LCD display • Re-power on • 100L QFP package • On-chip buzzer driver • 3V DC power supply • Low battery detection for 3V or 9V battery

TBR0618HA1

Contextual Info: 6 TO 18 GHz TRIPLE-BALANCED MIXER MODELS: TBR0618HA1, TBR0618HA1-S FEATURES TBR0618HA1 • RF/LO coverage . 6 to 18 GHz • IF operation . 0.05 to 5 GHz • LO power range . +17 to +21 dBm • Input 1 dB comp. +13 dBm typical

dc-dc 48 to 5

Abstract: Cyrustek 100L Cyrustek es519 single chip digital multimeter ES51969 12V DC to 1000V dC converter schematic diagram TL0616 digital AC clamp meter schematic
Contextual Info: ES51969 6,600 Counts Auto DMM • Auto power off 30min/15min Features • Sleep state indicative signal output • 6,600 counts LCD display • Re-power on • 100L QFP package • On-chip buzzer driver • 3V DC power supply • Low battery detection for 3V or 9V battery

transistor bsw 67

Abstract: transistor BD139 PH 71 BC547 BSR512 BCY883 BSW 68 transistor BC548 Transistor 2N2219A Transistor BSX45 PHILIPS PN2222A
Contextual Info: Concise Catalogue 1996 P hilip s Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors GENERAL-PURPOSE LOW-FREQUENCY BIPOLAR TRANSISTORS ratings type num ber P,o. max. mW hpE @ min./max. (V) 'c max. (mA) BC107

BA662

Abstract: sp501 SP501A
Contextual Info: SP501 SIGNAL PROCESSING EXCELLENCE flexiPORT Multi-Mode Serial Transceiver • Supports Industry Standard SoftwareSelectable Protocols: • RS232 V.28 • RS422A (V.11, X.27) • RS423A (V.10, X.26) • RS449 • RS485 • V.35 •MIL-STD-188C • MIL-STD-188-114A, Unbalanced

BA662

Abstract: vn 530 sp 31 x 132 ba 662 rs-449 db37 to db25 SP501A mil188c trw diodes DSR MIL-STD-188-114 SPS01-D
Contextual Info: C ln o v _ ‘ "K W ' SP501 SK'.NA I 1‘FtOU HSINi • IX f.H U N C i flexiPORT Multi-Mode Serial Transceiver • Supports Industry Standard SoftwareSelectable Protocols: • RS232 V.28 • RS422A (V.11, X.27) • RS423A (V.10, X.26) • RS449 • RS485

VN66AK

Abstract: VMOS Transistor VN88AF Siliconix VMOS VN66AF equivalent VN46AF equivalent VN46AF VN98AK VMOS VN88AF SILICONIX
Contextual Info: AN77-2 s Silico n ix APPLICATION NOTE Don’t Trade Off Analog Switch Specs. V M O S -A Solution to High Speed, High Current, Low Resistance Analog Switches Walt Heinzer INTRODUCTION F or analog switches, Vertical MOS VMOS transistors give you a nearly ideal com bination o f characteristics—w ithout