68841 Search Results

Contextual Info: Compact power supply module in IP67 24 VDC output voltage - 2 x 4 A output current PSU67-12-2480/M • ■ CE compliant ■ UL certified ■ RoHS compliant ■ Broad temperature range ■ Status LED ■ PSU67-12-2480/M 6884148 Nominal voltage Operating voltage

Contextual Info: Compact power supply module in IP67 24 VDC output voltage - 8 A output current PSU67-11-2480/M • PSU67-11-2480/M 6884147 Nominal voltage Operating voltage Frequency Operating voltage range Power consumption Power loss, typical Mains buffering Universal voltage supply unit

RSM40RKM50-1.4M/BL67

Contextual Info: Compact power supply module in IP67 24 VDC output voltage - 4 A output current PSU67-11-2440/M • PSU67-11-2440/M 6884141 Nominal voltage Operating voltage Frequency Operating voltage range Power consumption Power loss, typical Mains buffering Universal voltage supply unit

PSU67-22-480/24120/M

Contextual Info: Compact power supply module in IP67 24 VDC output voltage - 2 A output current PSU67-11-2420/M • Type code Ident no. PSU67-11-2420/M 6884140 Nominal voltage Operating voltage Frequency Operating voltage range Mains buffering Universal voltage supply unit

BS5450

Abstract: PE Relay LXT380 LXT381 TG29 TG48 TG49 bell S553 SIGNAL PATH designer what is B8ZS and how does it work
Contextual Info: LXT380/1 Frequently Asked Questions January 2001 Order Number: 249181-001 As of January 15, 2001, this document replaces the Level One document known as LXT380/LXT381FAQs. Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

Si4435DDY

Abstract: Si4435DDY-T1-E3 Si4435DDY-T1-GE3
Contextual Info: New Product Si4435DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.024 at VGS = - 10 V - 11.4 0.035 at VGS = - 4.5 V - 9.4 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

TIL 121 opto

Contextual Info: TopTech Semiconductors. Siemens D K S iem ens AG Lahnw eg 10 Postfach 1115 W -4 000 Düsseldorf 1 (0211) 3 9 9 -0 Ttx 21134401 FAX (0211) 399-1481 Siem ens A/S B o ru p v a n g 3 2 7 5 0 Ballerup ® 4 4 7 7 4 4 7 7 , [131258222 FAX 4 4 7 7 4 0 1 7 Siem ens Ltd., Head O ffice

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

Contextual Info: accessories for fieldbus systems IP66 stainless steel housing EG-VA2020/BV67-T103 The stainless steel housing EG-VA2020/ BV67-T103 is suited for the integration of TURCK junction boxes JRBS-… The robust model is especially suited for rough and aggressive environmental conditions.

Contextual Info: SIEMENS SDE 2526 MOS 1C Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus Interface with Extended Temperature Range Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E PROM • 256 X 8-bit organization • + 5 V supply voltage

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

BS5450

Abstract: LXT384 T1124 TG26 TG29 TG49 signal path designer what is B8ZS and how does it work
Contextual Info: LXT384/6/8 Frequently Asked Questions January 2001 Order Number: 249183-001 As of January 15, 2001, this document replaces the Level One document known as LXT384/6/8 — FAQs. Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

Contextual Info: New Product Si4435DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.024 at VGS = - 10 V - 11.4 0.035 at VGS = - 4.5 V - 9.4 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4435DDY

Abstract: Si4435DDY-T1-GE3 Si4435DDY-T1-E3 68841 Tf-1225
Contextual Info: New Product Si4435DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.024 at VGS = - 10 V - 11.4 0.035 at VGS = - 4.5 V - 9.4 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Remote I/O system excom PROFIBUS-DP interface GDP1,5-FW1.7.6 The GDP1,5-FW1.7.6 gateway serves to connect the excom® system to PROFIBUS-DP networks. Connections to the PROFIBUS-DP can be established via fiber optics or with copper cables. When using copper cables it is required to use a segement coupler RS485-IS

BSM254F

Abstract: BSM 204-A siemens bsm 284 f BSM 214 A siemens bsm 181 AR BSM101AR siemens bsm 101 AR BB 3656 BSM181 BSM204A
Contextual Info: SIEMENS SIMOPAC Modules Features Applications • • • • • • • • • • Fully insulated Easy to parallel High switching speed capability FREDFET-modules UL-listed Motor controls UPS Switch mode power supplies Welding systems Induction heating

e1414

Abstract: siemens master drive circuit diagram L1152B siemens sda
Contextual Info: SIEMENS Nonvolatile Memory 1-Kbit E2PROM with PC Bus Interface SDA 2516 MOSIC Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)

SI4435DDY-T1-E3

Contextual Info: New Product Si4435DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.024 at VGS = - 10 V - 11.4 0.035 at VGS = - 4.5 V - 9.4 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SIEMENS Nonvolatile Memory 8-Kbit E2PROM with I2C Bus and Write Protection SDA 3586-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)

Contextual Info: SIEMENS Nonvolatile Memory 4-Kbit E2PROM with I 2C Bus Interface SDA 2546 MOS 1C Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 512 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)

siemens ha 8000

Abstract: LA 42071 electronic components ltd SIEMENS K 30 SIEMENS DRIVE
Contextual Info: Top Tech Semiconductors - Worldwide D K Siemens AG Österreich Postfach 326 1031 Wien (01) 71711-5661 Usi 1372-10 FAX (01) 71711-5973 (*us) Siemens Ltd., Head Office 544 Church Street Richmond (Melbourne), Vic. 3121 © (03) 42071 11,1x130425 FAX (03) 4207275

Contextual Info: New Product Si4435DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.024 at VGS = - 10 V - 11.4 0.035 at VGS = - 4.5 V - 9.4 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si4435DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.024 at VGS = - 10 V - 11.4 0.035 at VGS = - 4.5 V - 9.4 VDS (V) - 30 Qg (Typ.) APPLICATIONS 15 nC RoHS COMPLIANT