68G MARKING Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 BCW68F/68G/68H TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Complementary to BCW66 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 BCW68F/68G/68H 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 2. 4 1. 3 W(Tamb=25℃) 0. 95 0. 4 2. 9 Collector current -0.8 A ICM: Collector-base voltage V

68G MARKING

Contextual Info: BCW67 BCW68 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW 67A DA BCW 67B DB BCW 67C DC BCW68F DF BCW 68G DG BCW 68H DH 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION

marking 68g

Abstract: B44 transistor BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H
Contextual Info: 23Ô33T4 b44 if II BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS A LL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration

Contextual Info: BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN mm BCW67A = DA BCW67B = DB BCW67C » DC BCW68F = DF BCW68G = DG BCW68H = DH 3.0 2.8 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

BCW67A

Contextual Info: 23033^4 □0GD7b4 b44 itili 'H t BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38

marking 68g

Abstract: BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H SA series transistor
Contextual Info: BCW67, A, B, C BCW68, F, G, H CDfll GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 0.09 3 Pin configuration

ic 556

Contextual Info: BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking PACKAGE OUTLINE DETAILS A LL DIM ENSIO NS IN mm BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH 3.0 2.8 f I i 3 I Pin configuration 1 = BASE 2 = EMITTER

BCW Smd transistor

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transisto r Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG

SMD Transistor 68f

Abstract: smd transistor marking da 68g diode bcw68f smd BCW67B marking 68g smd diode DH BCW67 BCW67A BCW68
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking

marking 68g

Abstract: smd transistor marking da bcw67a smd transistor 556 smd smd transistor H F BCW67A BCW67B BCW68 BCW68F BCW68G
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG

marking code 67a sot23 6

Abstract: marking 68g 67A SOT 23 6 code 67a marking 67A DC/67A SOT23-6
Contextual Info: BCW 67, BCW 68 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP PNP Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1 2.5 max

marking 68g

Abstract: 67A SOT 23 6 BCW67
Contextual Info: Tb M O T O R O L A SC Í X S T R S / R F> r 6367254 M OT OR OL A SC CXSTRS/R D l T | b3L,755M 96D F 81953 D D flnsa D M A XIM U M RATINGS Sym bol BCW67 BCW68 Coliector-Emitter Voltage Rating VCEO 32 45 Vdc Collector-Base Voltage VCBO 45 60 Vdc Emitter-Base Voltage

Contextual Info: 34 M O T O R O L A SC i D I O D E S / O P T O l 6 3 6 7 2 5 5 MOTOROLA SC ÖF^LBb7aSS DI ODES/ OPTO 34C DDBöaS? t 38257 D SOT23 (continued) DEVICE NO. BCW67A,B,C, BCW68F,G,H SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C I I • Designed for low-frequency driver stage as well as switching

DHs SOT-23

Abstract: DFs SOT-23 sep 67a BCW67 das sot 23 67A SOT 23 6
Contextual Info: BCW 67, BCW 68 PNP Silicon AF Transistors 3 • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW 65, BCW 66 NPN 2 1 Type Marking Pin Configuration BCW 67A DAs 1=B 2=E 3=C SOT-23 BCW 67B

BCW65C

Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A

Contextual Info: SF61G - SF68G Pb 6.0AMPS. Glass Passivated Super Fast Rectifiers DO-201AD RoHS COMPLIANCE Features ­ High efficiency, low VF ­ High current capability ­ High reliability ­ High surge current capability ­ Low power loss ­ For use in low voltage, high frequency inventor,

Contextual Info: SF61G - SF68G creat by art Pb 6.0AMPS. Glass Passivated Super Fast Rectifiers DO-201AD RoHS COMPLIANCE Features — High efficiency, low VF — High current capability — High reliability — High surge current capability — Low power loss — For use in low voltage, high frequency inventor,

Contextual Info: SF61G - SF68G creat by art 6.0AMPS. Glass Passivated Super Fast Rectifiers DO-201AD Features — High efficiency, low VF — High current capability — High reliability — High surge current capability — Low power loss — For use in low voltage, high frequency inverter,

marking sf -6

Contextual Info: IM TAIWAN SEMICONDUCTOR RoHS COMPLIANCE SF61G - SF68G 6.0 AMPS. Glass Passivated Super Fast Rectifiers DQ-201 AD .220 5.6 .197(5.0) DIA. Features -v-v❖ -y•fr High efficiency, low VF High current capability High reliability High surge current capability

Contextual Info: SF61G - SF68G creat by art 6.0AMPS. Glass Passivated Super Fast Rectifiers DO-201AD Features — High efficiency, low VF — High current capability — High reliability — High surge current capability — Low power loss — For use in low voltage, high frequency inverter,

SF61G

Abstract: SF68G
Contextual Info: IM TAIWAN SEMICONDUCTOR RoHS COMPLIANCE SF61G - SF68G 6.0 AMPS. Glass Passivated Super Fast Rectifiers DQ-201 AD .220 5.6 .197(5.0) DIA. Features -v-v❖ -y•fr High efficiency, low VF High current capability High reliability High surge current capability

MARKING CODE A06

Abstract: marking 1G SOT23 sot-23 MARKING CODE G1 AH A06 sot-23 body marking 1P NPN e30551 marking A06 A12 marking amplifier A55 marking sot-23 Marking G1
Contextual Info: FERRANTI * semiconductors FMMT-A05 FM MT-AO6 NPN Silicon Planar Medium Power Transistors D E S C R IP T IO N M e d iu m pow er transistors designed fo r sm all and medium am plification from d.c. to radio frequencies, in applica­ tio n s such as Audio Frequency Am plifiers, Drivers,

BCX17

Abstract: BCX18R marking of m7 diodes sot 23 marking code T2 sot marking t5 T4 MARKING CODE I8 SOT23 Diode marking m7 t4 u4 BCX17R
Contextual Info: FERRANTI semiconductors BCX17 BCX18 PNP Si licon Planar M e d i u m P o w e r Transistors DESCRIPTION These devices are intended for saturated sw itching, general purpose sw itch in g and driver applications. Com plem entary to the BCX19 and BCX20. Encapsulated in the popular SO T-23 package these devices