BCW66 Search Results

BCW66F

Abstract: BCW66G BCW66H BCW68F BCW68H
Contextual Info: BCW66F . BCW66H BCW66F . BCW66H Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-07-31 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

Contextual Info: BCW66G Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Mounting Pad Layout Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.079 (2.0) 0.035 (0.9) .007 (0.175) .005 (0.125) max. .004 (0.1) .037(0.95) .037(0.95) Pin Configuration

Contextual Info: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted

NPN SOT23-6

Abstract: ZDT1049 DUAL NPN SOT23-6 zdt6790 fzt849 WDFN3 BCP6825 ZXTBM322 sot223 transistor sot23
Contextual Info: Zetex Device BCP6825 BCP6925 BCV27 BCW66H BCW68H BCX17 BCX19 BCX6825 BCX6916 BCX6925 FCX1047A FCX1051A FCX1147A FCX1149A FCX1151A FCX491A FCX589 FCX591A FCX617 FCX619 FCX688B FCX690B FCX717 FCX718 FCX789A FCX790A FMMT449 FMMT489 FMMT491A FMMT549 FMMT549A FMMT589

BCW65A

Abstract: BCW65B BCW65BR BCW66H BCW65 BCW65C BCW65CR BCW66F BCW66FR BCW66G
Contextual Info: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3- AUGUST PARTMARKING 1995 DETAILS EA BCW65A13 - BCW65B - EB BCW65BR - 5V BCW65C - EC BCW65CR - 6V 7P BCW65A - EF BCW66FR - BCW66G - EG BCW66GF - 5T BCW66H - EH BCW66HF - 7M TYPES BCW65 -

Contextual Info: MCC BCW66H
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features NPN Small l Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 l Ideally Suited for Automatic Insertion

marking eh

Contextual Info: MCC BCW66H
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l Epitaxial Planar Die Construction

bcy591x

Abstract: 2N6429A sot23 12p BCY590 2SC538A TBC337A BC521 LOW-POWER SILICON NPN TMPT6429 BCY59C
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC382 KSC1072 2SC538A 2SC538A 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG gg~~iB~ 15 20 BCY59B BCY59B BC171 JE9014 JC501R M02975 2N2916A BFY76 ~~~~~~B BCY59-B BCY59C BCY59C BCY55 BCX59-10 BCY59X BC237C BC237C18

marking EG

Contextual Info: MCC TM Micro Commercial Components BCW66G
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Small Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors BCW66GLT1 NPN Silicon 3 COLLECTOR 3 1 1 BASE 2 2 EMITTER MAXIMUM RATINGS CASE 318–08, STYLE 6 SOT–23 TO–236AB Rating Symbol Value Unit Collector–Emitter Voltage V CEO 45 Vdc Collector–Base Voltage

BCW66

Abstract: EFs SOT-23 BCW65 egs SOT23
Contextual Info: Transistors IC SMD Type NPN General Purpose Transistors BCW65,BCW66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 Low collector-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 High current gain. 0.4 3 For general AF applications. 2 +0.1 0.95-0.1

003A MARKING TRANSISTOR

Abstract: BCW66F BCW66G BCW66H
Contextual Info: MOTOROLA SC { DIODES/OPTO} 6367255 MOTOROLA SC 34 » F | b 3 b 7 a S S D03Ô5SS 2 DIODES/OPTO 34C 3 8 2 55 D SOT23 (continued) BCW66F,G,H DEVICE NO. SMALL-SIGNAL NPN TRANSISTOR TOP v ie w c I I • *— ' - in B Device nr E Designed for low-frequency driver stage and switching

BCW 90

Abstract: BCW66 BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H
Contextual Info: BCW67, BCW68 PNP Silicon AF Transistors • For general AF applications 2 3 • High current gain 1 • Low collector-emitter saturation voltage • Complementary types: BCW66. NPN • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

100MHZ

Abstract: BCW66H
Contextual Info: RECTRON BCW66H SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.8 A * Collector-base voltage V(BR)CBO : 75 V * Operating and storage junction temperature range

BCW65

Abstract: BCW66 BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H
Contextual Info: BCW67, BCW68 PNP Silicon AF Transistors 3
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW65, BCW66 NPN 2 1 Type Marking Pin Configuration BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B DBs 1=B

BCW66

Abstract: BCW65 BCW65A BCW67 BCW68 bcw66fr
Contextual Info: BCW65 BCW66 SOT23 NPN SILICON PLANAR M EDIUM POWER TRANSISTORS IS S U E 3 - A U G U S T 1995 P A R T M A R K IN G D E T A IL S B C W 6 5 A - EA _ B C W 6 5 A R - 4V B C W 65BR - 5V B C W 6 5 B - EB B C W 6 5 C - EC B C W 6 6 F - EF BC W 65CR - 6V B C W 6 6 G - EG

bcw66

Contextual Info: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B

Contextual Info: BCW67, BCW68 PNP Silicon AF Transistors 3
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW65, BCW66 NPN 2 1 Type Marking Pin Configuration BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B DBs 1=B

BCW65AR

Abstract: BCW65BR BCW66HR BCW66GR BCW65CR BCW65 BCW65A BCW65B BCW65C BCW66F
Contextual Info: BCW65 BCW66 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA BCW65 BCW66 V(BR)CES 60 75 V IC=10µA IC=10µA

BCW66GLT1

Abstract: BCW66GLT1G
Contextual Info: BCW66GLT1 General Purpose Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 75 Vdc Emitter −Base Voltage

bcw66h

Contextual Info: BCW66F . BCW66H BCW66F . BCW66H Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-07-31 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse

BC817

Abstract: BC817-25-6BZ BC818-40-6GZ BC818C BC817-40-6CZ BC818
Contextual Info: PART OBSOLETE - USE BCW66H BC817 BC818 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 – june 1996 PARTMARKING DETAILS BC817 – 6DZ BC817-16 – 6AZ BC817-25 – 6BZ BC817-40 – 6CZ ✪ BC818 – 6HZ BC818-16 – 6EZ BC818-25 – 6FZ BC818-40 – 6GZ

BCW68H

Contextual Info: Not Recommended for New Design Please Use BCW68H SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCW68 ISSUE 5 - MARCH 2001 PARTMARKING DETAILS – BCW68F – BCW68G – BCW68H – DF DG DH BCW68FR – BCW68GR – BCW68HR – 7T 5T 7N E C B COMPLEMENTARY TYPES – BCW66

BCW65A

Contextual Info: Central BCW65 SERIES BCW66 SERIES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and