rtd pt100 interface to 8051
Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
Text: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515
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OPA340PA:
ADS7816P:
12-Bit
200KHz
OPA2337PA:
ADS7822P:
INA125UA:
OPA680U:
OPA547F:
rtd pt100 interface to 8051
24V 20A SIEMENS battery charger
LM2560
smd 58a transistor 6-pin
pic 16f84 PWM circuit
scr control light intensity using 8051
8051 microwave oven
design of FM transmitter final year project
project pic 16f84 pwm
"white led" 5mm
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Untitled
Abstract: No abstract text available
Text: User's Guide SLVU431 – January 2011 Using the TPS53219EVM-690 Wide-Input Voltage, Eco-mode , Single, Synchronous, Step-Down Controller The TPS53219EVM-690 evaluation module allows users to evaluate the Texas Instruments TPS53219, a small-sized, single, buck controller with adaptive on-time D-CAP™ mode control. Included in this
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SLVU431
TPS53219EVM-690
TPS53219,
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690 mosfet
Abstract: No abstract text available
Text: FQB7P20 / FQI7P20 P-Channel QFET MOSFET - 200 V, - 7.3 A, 690 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQB7P20
FQI7P20
FQI7P20
FQB7N20
FQI7N20
690 mosfet
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Untitled
Abstract: No abstract text available
Text: FQB7P20 P-Channel QFET MOSFET -200 V, -7.3 A, 690 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQB7P20
FQB7P20
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Untitled
Abstract: No abstract text available
Text: FQPF7P20 P-Channel QFET MOSFET -200 V, -5.2 A, 690 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQPF7P20
O-220F
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Untitled
Abstract: No abstract text available
Text: FQD7P20 P-Channel QFET MOSFET -200 V, -5.7 A, 690 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQD7P20
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Untitled
Abstract: No abstract text available
Text: FDD7N20TM N-Channel UniFETTM MOSFET 200 V, 5 A, 690 mΩ Features Description • RDS on = 580 mΩ (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDD7N20TM
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM MOSFET Module VMO 650-01F VDSS = 100 V ID25 = 690 A RDS on = 1.8 mW D N-Channel Enhancement Mode G Preliminary Data E 72873 G KS S S KS D Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 10 kW
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650-01F
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650-01F
Abstract: robot control AC motor speed control
Text: HiPerFETTM MOSFET Module VMO 650-01F VDSS = 100 V = 690 A ID25 RDS on = 1.8 mW D N-Channel Enhancement Mode G Preliminary Data E 72873 G KS S S KS D Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 10 kW
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650-01F
650-01F
robot control
AC motor speed control
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM MOSFET Module VMO 650-01F VDSS = 100 V = 690 A ID25 RDS on = 1.8 mW D N-Channel Enhancement Mode G Preliminary Data E 72873 KS S S Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 10 kΩ 100 V VGS Continuous ±20
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650-01F
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nf 931 diode
Abstract: 650-01F
Text: HiPerFETTM MOSFET Module VMO 650-01F VDSS = 100 V ID25 = 690 A Ω RDS on = 1.8 mΩ D N-Channel Enhancement Mode G Preliminary Data E 72873 G KS S S KS D Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 10 kΩ
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650-01F
nf 931 diode
650-01F
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Untitled
Abstract: No abstract text available
Text: FDD7N20 N-Channel UniFETTM MOSFET 200 V, 5 A, 690 m Features Description • RDS on = 580 mΩ (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDD7N20
FDD7N20
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Untitled
Abstract: No abstract text available
Text: UM10710 UBA20270DB1122 - 35 W/46 V/690 mA LED driver demo board Rev. 2 — 25 September 2013 User manual Document information Info Content Keywords UBA20270DB1122, demo board, LED, non-dimmable, PFC Abstract The UBA20270DB1122 is a non-dimmable 230 V mains 35 W LED driver
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UM10710
UBA20270DB1122
UBA20270DB1122,
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500w car audio amplifier circuit diagram
Abstract: Diode smd code 10-16V 12v 200W AUDIO booster CIRCUIT DIAGRAM 8038 waveform generator Diode smd 1016V 230v 400Hz converter schematic TRANSISTOR SMD MARKING CODE AOL 8038 ic tester circuit diagram circuit diagram of crt monitor yoke coil 1500w mosfet audio amplifier circuit diagram
Text: Designed to Help You Boost Your Analog Design Power Revision 4b November 5, 1998 23:24:17 GMT APEX MICROTECHNOLOGY CORPORATION 5980 N. Shannon Road, Tucson, Arizona USA 520 690-8600 Fax (520) 888-7003 Table of Contents Welcome to Apex 4 Model number conventionsÉÉÉÉÉÉ
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damn fast op amp
Abstract: 1200w power amplifier circuit diagram 500w FM power amplifier circuit diagram 1200w audio amplifier circuit diagram 1200w power amplifier installation diagram S100DB al 12 fc battery drill charger 1kw full bridge reference design 1200w inverter circuit diagram 500w audio amplifier circuit diagram
Text: -1 PWM Pulse Width Modulation • More Work • Less Waste As delivered power levels approach 200W, sometimes before then, heatsinking issues become a royal pain. PWM is a way to ease this pain. A PEX MICROTECHNOLOGY CORPORATION • TELEPHONE 5 2 0 690-8600 • FAX (5 2 0 ) 8 8 8-3329 • ORDERS (5 2 0 ) 690-8601 • EM AIL p rodlit@ ap exm icro tech.co m
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22KHz
22KHz*
30KHZ"
42KHZ
200KHZ
SA0822KHZ
SA1822KHZ*
500KHZ
damn fast op amp
1200w power amplifier circuit diagram
500w FM power amplifier circuit diagram
1200w audio amplifier circuit diagram
1200w power amplifier installation diagram
S100DB
al 12 fc battery drill charger
1kw full bridge reference design
1200w inverter circuit diagram
500w audio amplifier circuit diagram
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650-01F
Abstract: DIXYS 8502F c310 vmk 90-02
Text: DIXYS _ MOSFET Modules v p ^Dfconl DSS Diijon) Contents 0 0} ' Page . max. Tc = 25 °C Tc = 25 °C V A n 100 590 0.0021 > VMO 550-01F C3-2 690 0.0018 >• VMO 650-01F C3-4 200 85 0.025 85 0.025 385 0.0046 420 0.0042 C3-6 VMK 90-02 T2 C3-10
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85-02F
550-01F
650-01F
C3-10
400-02F
C3-14
C3-18
DIXYS
8502F
c310
vmk 90-02
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Untitled
Abstract: No abstract text available
Text: HiPerFET MOSFET Module VMO 650-01F VDSS = 100 V Id25 ^ D S o n “ 690 A - 1 - 8 mQ N-Channel Enhancement Mode Preliminary Data . O Symbol Test Conditions Maximum Ratings vv DSS Td = 25°C to 150°C 100 V v DGR Td = 25°C to 150°C; RGS = 10 kß 100
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650-01F
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Untitled
Abstract: No abstract text available
Text: DIXYS HiPerFET MOSFET Module VMO 650-01F VDSS = 100V I D25 = 690 A RDS on = 1.8 m û N-Channel Enhancement Mode Preliminary Data 11 S Symbol Test Conditions V *D S S Tj = 25°C to 150°C 100 V VTOR Tj = 25°C to 150°C; RGS = 10 kQ 100 V Vos v GSM Continuous
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650-01F
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nf 931 diode
Abstract: No abstract text available
Text: OIXYS HiPerFET MOSFET Module VMO 650-01 F VDSS = 100 V = 690 A D25 RDS on = 1.8 mQ N-Channel Enhancement Mode G J P relim in ary Data é KS Symbol v „ ss Test Conditions Maximum Ratings Tj = 2 5 °C tO l5 0 °C 100 V Tj = 25°C to 150°C; RGS = 10 k£2
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mosfet marking code AL sot-23
Abstract: transistor marking code 24 TRANSISTOR MARKING 24 24 marking transistor transistor marking code AL transistor B 722 MARKING CODE 24 TRANSISTOR Amplifier "marking code" D code marking 2M sot-23 MOSFET S690T
Text: TELEFUNKEN EL ECT RONI C 61C D • fiTBDDTb 0 0 0 5 4 5 b S 690 T trKLKFdDKlKIKl electronic Creative Technologies 4 ■ AL 66 _ r ~ 3 i- L i Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier
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569-GS
mosfet marking code AL sot-23
transistor marking code 24
TRANSISTOR MARKING 24
24 marking transistor
transistor marking code AL
transistor B 722
MARKING CODE 24 TRANSISTOR
Amplifier "marking code" D
code marking 2M sot-23 MOSFET
S690T
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380-02F
Abstract: C314
Text: MOSFET Modules _ Contents D v DSS ^D co n t max. Tc = 25°C Tc = 25°C V A m ii 100 590 2.1 VMO 550-01F C3-2 690 1.8 VMO 650-01F C3-4 85 25 85 25 450 4.6 VMO 450-02F 1> C3-14 500 4.2 VMO 500-02F 2> C3-18 200 TO 240 DS(on)max ^ 0* ^ . VMK 90-02 T2
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85-02F
550-01F
650-01F
450-02F
500-02F
C3-10
C3-14
C3-18
380-02F
400-02F
C314
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TO-264AA
Abstract: bfc60 BFC51 SOT227 BFC24
Text: lili Sem elab Power M anagem ent Division 4 GENERATION PLASTIC POWER MOSFETS Part Package Number Type 255 BFC10 SOT227 242 BFC11 SOT227 5410 232 BFC12 SOT227 5350 228 BFC13 SOT227 BFC14 224 520 5325 56.0 IN DEVELOPMENT, ULTRA LOW RDS ON MOSFETs in SOT227 Package
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OT227
BFC10
BFC11
BFC12
BFC13
TO-264AA
bfc60
BFC51
SOT227
BFC24
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APT802R4KN
Abstract: APT10050JN lf 3560 FREDFET APT5010JN APT8018 APT4065BN 690 mosfet APT10M13JNR R6KN
Text: APT PLASTIC PACKAGE MOSFET/FREDFET PRODUCTS BV DSS Volts 400 R ds ° n Ohms lD(Cont.) Amps PD Ciss(pF) Watts Typ Qg(nC) Typ APT Part No. APT4016BN APT4018BN APT4016BNR APT4018BNR APT4020BN APT4025BN APT4020BNR APT4025BNR LOW Ros(ON) LOW Ros(ON) UIS RATED
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APT4016BN
APT4018BN
APT4016BNR
APT4018BNR
APT4020BN
APT4025BN
APT4020BNR
APT4025BNR
APT10M13JNR
APT10M15JNR
APT802R4KN
APT10050JN
lf 3560
FREDFET
APT5010JN
APT8018
APT4065BN
690 mosfet
R6KN
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k1507
Abstract: K1507 MOSFET 90T03P 2SK1081 2SK1276 2SK1821 2SK1388 2SK1661 90.T03P 2SK1084
Text: FUJI [ITLilC&irOgDE COLLHER SEMICONDUCTOR INC MAE » 55367^5 GGQ1Ô02 DbM • C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn off time Logic level operation, low
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T03PF
2SK1081
2SK956-01
2SK1385-01
2SK957-01
T0220F
2SK958-01
T0220
2SK959-01
2SK1548-01
k1507
K1507 MOSFET
90T03P
2SK1276
2SK1821
2SK1388
2SK1661
90.T03P
2SK1084
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