2SK1276 Search Results

Contextual Info: 2SK1276A N-channel MOS-FET F-V Series 250V > Features 0,25Ω 20A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

2SK1276A

Contextual Info: 2SK1276A N-channel MOS-FET F-V Series 250V > Features 0,25Ω 20A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

Contextual Info: 2SK1276 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)80 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100# Minimum Operating Temp (øC)

Contextual Info: FU JI 2SK1276A N-channel MOS-FET F-V Series 250V > Features - 0,25Q 20 A 100W > Outline Drawing Include Fast Recovery Diode High Voltage Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics - Absolute Maximum Ratings Tc=25°CV

2SK1276A

Abstract: SC-65 P channel MOSFET 10A schematic
Contextual Info: 2SK1276A FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- V SERIES Outline Drawings Features TO-3P Include fast recovery diode High voltage Low driving power Applications Motor controllers Inverters Choppers 3. Source JEDEC EIAJ Maximum ratings and characteristics

2SK1276

Contextual Info: 2SK1276A FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- V SERIES Outline Drawings Features TO-3P Include fast recovery diode High voltage Low driving power Applications Motor controllers Inverters Choppers 3. Source JEDEC EIAJ Maximum ratings and characteristics

T0220F

Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)

2SK1171

Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Contextual Info: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn

2SK100

Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:

2sk2774

Abstract: TO220F15 2SK3271 2sk2251 to 220f15 TO-220F15 2sk1818 2sk2954 2SK2255 2sk2098
Contextual Info: VDSS 100 to 250 volts Series Package Drain-source voltage VDSS Voltage 100 F-I series TO-3P F-II series T-Pack FAP-II series TO-220AB 120 150 200 250 2SK2753(50,0.032) 2SK2849(18,0.18) 2SK2519(10,0.4) 2SK2521(18,0.18) 2SK2520(10,0.4) 2SK2522(18,0.18) TO-220F15

Contextual Info: JE /V 7 -M 0 S F E T / Power MOSFETs FA P-IIS '> V - X FA P-IIS series iWi>m • ^c77/ ’i' - 7 > '> 1 iiM f S s I m s Device type Voss Voita Repetitive avalanche rated to Id pulse Amps. Amps. I t e (on) Max. * ’ Ohms (Si) Pd * V gss Vos (th) Typ.

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

2sk1005

Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Contextual Info: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn

a2169

Abstract: A2168 a2166 A2167 K1276A SK1276A RFTQ 2SK1276A SC-65 oak capacitance
Contextual Info: 2.SK1276A FUJI POW ER M OS-FET N-CHANNEL SILICON POWER MOS-FET F-V SERIES • -eatures Outline Drawings • Include fast recovery diode • high voltage • Low driving power ■ Applications • Motor controllers • Inverters • Choppors I Max. Ratings and Characteristics

2SK962

Abstract: T03P 2MI200F-025
Contextual Info: COLLHER SEMICONDUCTOR INC 22367^2 OOGIS?^ OTT « C O L 4ÔE » MOSFETS <§ F-ll SERIES toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 Ratings lo (A) Vdss(V) 900 900 900 900 1000 Characteristics (Tc=25°C) Sis(S)

220TQ

Contextual Info: MOSFETs FAP-IIIB Series - Logic Level Operation, Ultra Low R d s ON , High Avalanche Ruggedness 30 - 60 Volts Device Type 2SK2806-01 2SK2807-01L.S 2SK2808-01 MR 2SK2890-01 MR 2SK2687-01 2SK2688-01L.S 2SK2689-01MR 2SK2892-01R 2SK2891-01 2SK2893-01 2SK2894-01R

2SK2652

Abstract: 2SK2771-01R
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT

2SK3102-01R

Abstract: 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type 2SK3340-01 2SK2870-01L, S 2SK2871-01 2SK2872-01MR 2SK2873-01

90T03P

Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
Contextual Info: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn

F5022

Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01

2SK1815

Abstract: 2SK1388
Contextual Info: MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low Rds ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Device Type 2SK1822-01M 2SK2165-01 2SK2166-01 2SK2259-01M 2SK1823-01 2SK1969-01 Maximum Ratiilas I d (A) Pd (W)

a2169

Abstract: A2167 sk1276
Contextual Info: 2.SK1276A FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F-V SERIES • -eatures IOutline Drawings • Include fast recovery diode 4 • h igh voltage • Low driving power / j 1 in { V ■ Applications ^ 9 3 • Motor controllers • Inverters

ci 740

Abstract: K1279 TO-220F15 K1969 2SK1822-01MR 2SK1823-01R 2SK2165-01 2SK2166-01R 2SK2259-01MR 2SK2687-01
Contextual Info: <s MOSFETs FAP-IIIA Series - Automotive Types, Logic Level Operation, Low R ds ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Device Type Maximum Ratinas Pd (W) V dss (V) Id (A) 2SK1822-01MR 2SK2165-01 2SK2166-01R 2SK2259-01MR 2ÖK1823-01R

523a1

Abstract: 2SK955 2SK956-01 equivalent 2SK956 2sk1018 2sk956 equivalent 2sk1144 2SK1388 2sk725 equivalent 2SK900
Contextual Info: COLLMER SEMICONDUCTOR INC 34E S53Û7T2 » Ü001SS7 1 ICOL "T'3P\- 3 PUI1 [lU.IM sO’OSOE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on VGS + /- 30V Reduced turn off time High avalanced ruggedness VGS + /- 30V, Reduced turn off time