6H SIC Search Results

W6NRD0X-0000

Abstract: W4NRE0X-0D00 W4TRD0R-0D00 1E-18 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8C-S000 W4NXD8D-0000 W4NXD8D-S000
Contextual Info: Effective December 1998 • Revised March 2003 • Page 1 Silicon Carbide Substrates Product Specifications 4H Silicon Carbide n/p-type 6H Silicon Carbide (n/p-type) Page 2 • Effective December 1998 • Revised March 2003 Properties and Specifications for

W4PRE8F-0200

Abstract: W4TRD0R-0200 W4TRE0R-0200 W6NRD0X-0D00 W4NRE0X-0D00 silicon carbide cree Sic 1E16 W4TRF0R-0200 W4NRF0X-0D00
Contextual Info: Silicon Carbide Substrates and Epitaxy Product Specications 4H Silicon Carbide Substrates N-type, P-type, and Semi-Insulating 6H Silicon Carbide Substrates N-type N-type and P-type Silicon Carbide Epitaxy Subject to change without notice. www.cree.com 1

Contextual Info: M IT S U B IS H I M ICRO CO M PUTERS M 37410E6H XXXFP M 37410E 6H F S PROM VE R SIO N o f M 3 7 4 1 0 M 3 H X X X F P .M 3 7 4 1 0 M 4 H X X X F P .M 3 7 4 1 0 M 6 H X X X F P DESCRIPTION The M37410E6HFS, M37410E6HXXXFP are single-chip microcomputers designed with CMOS silicon gate technol­

M37413M6H

Contextual Info: M IT S U B IS H I M IC RO CO M PUTERS M 37413M 6H XXXFP S IN G L E -C H IP 8 -B IT CM O S M IC R O C O M P U T E R DESCRIPTION normal m ode a t 8M H z oscillation fre q u e n cy Thé M 37413M 6HXXXFP is a s in g le -c h ip m icro com p uter d e ­ h ig h -sp e e d m ode (a t 2M H z oscillation fre q u e n cy)

CEE17

Abstract: advantages of earth leakage circuit breaker EN60309 6F22 Ct516 80x7 earth leakage circuit IEC 60309 industrial plug dimensions
Contextual Info: CEE-industrial plugs and sockets CEE-Industriesteckvorrichtungen 188 - 199 Socket combinations ESTK Steckdosenkombinationen ESTK 200 - 202 Disconnectible wall mounting sockets Abschaltbare Wandsteckdosen 203 - 205 Dimensions 206 - 216 CEE-Industriesteckvorrichtungen

2BMSI

Abstract: LT8291 3polig
Contextual Info: Gekapselte Motorschalter Motor switches in enclosure Motor switches Motorschalter 108 - 113 Dimensions Maßzeichnungen 114 - 120 Technical tables Technisch Tabellen 121 - 122 107 Motorschalter T-Reihe Motor switches T series Ein-Ausschalter, 3-polig On-off switches, 3 poles

LTC4098-3.6

Abstract: 36A65 FBC 320
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F361F3D132214DDDC 2313FF36134%62332364C3 &'6 6 *+ &'6(6 )*+

AD899

Abstract: AD899A
Contextual Info: bei 8 * 199Î ANALOG DEVICES 32Mb/s READ CHANNEL ELECTRONICS AD899 PRODUCT D ESCRIPTION The AD899 offers a functionally complete read channel operating at up to 32Mb/s and is completely compatible with constant density recording. When it is connected to the output of the head

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK360N16P EconoPACK 4 Modul und PressFIT / NTC EconoPACK™4 module and PressFIT / NTC C2 *36+436,61234286544 (-./6061( 2-6345606166,62-7860696 :81;366<35*3

LTC4098-3.6

Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense

uv flame sensor

Abstract: thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
Contextual Info: PHYSICAL AND ELECTRONIC PROPERTIES OF SILICON CARBIDE The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices. A summary of the most impor­

2am SMD

Abstract: DAT16 DAT28
Contextual Info: ICs for Communications Content Addressable Memory Element CAME PXB 4360 F Version 1.1 Data Sheet 07.2000 Version 1.1 3;%  5HYLVLRQ +LVWRU\ &XUUHQW 9HUVLRQ  Previous Version: Preliminary Data Sheet 11.97 DS 2) Page Page Subjects (major changes since last revision)

t3d8d

Abstract: 1g1x SCL- IIZ SMD Transistor t5d transistor B633 R6J9 SPC8108F0C smd code 1Bs SPC8106FOC 1B4 SMD
Contextual Info: S-MOS S Y S T E M S A Seiko Epson. Affiliale SPC8106F0C Local Bus LCD/CRT VGA Controller SPC8106F0C TECHNICAL MANUAL Issue Date: 98/01/27 Document No. X12M-Q-001-03 C o p y rig h t 1995, 1998 S-M OS Systems Inc. All rights reserved. This document, and any text derived, extracted or transm itted from it, is the sole property of S-M OS Systems Inc. and may not be used, copied,

Contextual Info: Technische Information / technical information FD600R17KE3_B2 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values $ %& & $ 4 ' ( 4 ( = & $ A & / B A ( %& & ' & (

SGT-800

Contextual Info: Technische Information / technical information FD600R17KE3_B2 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values $ %& & $ 4 ' ( 4 ( = & $ A & / B A ( %& & ' & (

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

IXAN0027

Abstract: DIN iso 1302 ISO 1302 DC340 DIN ISO 965 DIN 1302
Contextual Info: IXAN0027 Mounting Instructions Montagehinweise The IXYS Semiconductor devices are thoroughly checked before leaving the factory. To avoid any damage during mounting, please note the following instructions. IXYS Leistungshalbleiter verlassen das Werk nach Prüfung in

DIN ISO 1302

Abstract: ISO 1302 DC340
Contextual Info: Mounting Instructions Montagehinweise The IXYS Semiconductor devices are thoroughly checked before leaving the factory. To avoid any damage during mounting, please note the following instructions. IXYS Leistungshalbleiter verlassen das Werk nach Prüfung in

JESD22-A114E

Abstract: LW 541G-E0G0-4H6H
Contextual Info: Hyper 5 mm T1 ¾ LED, Non Diffused Enhanced optical Power LED Lead (Pb) Free Product - RoHS Compliant LW 541G Besondere Merkmale Features • Gehäusetyp: nicht eingefärbtes, klares 5 mm (T1¾) Gehäuse • Besonderheit des Bauteils: enge Abstrahlcharakteristik; Lötspieße ohne

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FD200R65KF2-K Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values "C3#C2$D321322E14% C3C23D326C4%3

FP25R12W2T4

Abstract: NB54 K87 INFINEON
Contextual Info: Technische Information / technical information FP25R12W2T4 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values "# # $ % % % # , : $ > # ? > % "# # # % &' *+, -./0

Contextual Info: Technische Information / technical information FP35R12W2T4 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values "# # $ % % % # , : $ > # ? > % "# # # % &' *+, -./0

FZ600R12KE3

Contextual Info: Technische Information / technical information FZ600R12KE3 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values " # $ % % " 1, 1 % : " ? ? % $ @ % # &' *+, -./0 &. ) 2 +, &. ) *+, 3. 456 3. ;) 3.=>