IFS75B12N3E4 Search Results
IFS75B12N3E4 Price and Stock
Infineon Technologies AG IFS75B12N3E4B31BOSA1IGBT MOD 1200V 150A 385W |
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IFS75B12N3E4B31BOSA1 | Tray | 10 |
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IFS75B12N3E4B31BOSA1 | Tray | 12 Weeks | 10 |
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IFS75B12N3E4B31BOSA1 | 13 Weeks | 10 |
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Infineon Technologies AG IFS75B12N3E4_B31IGBT Modules MIPAQ BASE 1200V 75A |
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IFS75B12N3E4_B31 |
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IFS75B12N3E4 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IFS75B12N3E4B31BOSA1 |
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Discrete Semiconductor Products - Transistors - IGBTs - Modules - MOD IGBT LOW PWR ECONO | Original |
IFS75B12N3E4 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules IFS75B12N3E4_B39 MIPAQ base模块采用第四代沟槽栅/场终止IGBT和第四代发射机控制二极管带有电流采样电阻 |
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IFS75B12N3E4 BarcodeCode128 2013-0mayprovideapplicationnotes. | |
Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules IFS75B12N3E4_B31 |
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IFS75B12N3E4 | |
LTC4098-3.6
Abstract: A20-LCD15.6 SXA-01GW-P0.6
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IFS75B12N3E4 428654F4 D3265 ECFC24 B32DC CD3289 ECFC26 B32DC6 C36B3 1231423567896AB LTC4098-3.6 A20-LCD15.6 SXA-01GW-P0.6 | |
LTC4098-3.6
Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
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IFS75B12N3E4 428654F4 BCFC24 E32DC BCFC26 E32DC6 6734F 9C46E4 327C53 1231423567896AB LTC4098-3.6 se666 k3332 edt0145.6 SEH-01T-P0.6 | |
A7560Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules IFS75B12N3E4_B39 内蔵 and電流センス用シャント抵抗 |
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IFS75B12N3E4 BarcodeCode128 A7560 | |
AL6GContextual Info: Technische Information / technical information IFS75B12N3E4_B39 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current |
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IFS75B12N3E4 AL6G | |
ifs75b12n3e4_b32Contextual Info: Technische Information / technical information IFS75B12N3E4_B32 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense |
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IFS75B12N3E4 ifs75b12n3e4_b32 | |
474F3Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt |
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IFS75B12N3E4 E1322 FF326DC FC26E1 2313F D36134 1231423567896AB 54F36C 4112CD3567896BE 474F3 | |
Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules IFS75B12N3E4_B32 Strommesswiderstand |
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IFS75B12N3E4 | |
Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules IFS75B12N3E4_B39 Strommesswiderstand |
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IFS75B12N3E4 | |
Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules IFS75B12N3E4_B31 |
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IFS75B12N3E4 | |
IFS75B12N3E4_B31Contextual Info: Technische Information / technical information IFS75B12N3E4_B31 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt |
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IFS75B12N3E4 IFS75B12N3E4_B31 | |
Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules IFS75B12N3E4_B32 MIPAQ base模块采用第四代沟槽栅/场终止IGBT和第四代发射集控制二极管带有电流采样电阻 |
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IFS75B12N3E4 | |
Contextual Info: IGC70T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology low switching losses soft turn off positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications 1 Recommended for: |
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IGC70T120T8RM L7673U, L7673O, | |
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IFS75B12N3E4Contextual Info: IGC70T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology low switching losses soft turn off positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications 1 Recommended for: |
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IGC70T120T8RM L7673U, L7673O, IFS75B12N3E4 |