70-065-65 16A Search Results

Contextual Info: SEMTECH CORP SfiE D 6 1 3 ^ 1 3 ^ 0 D 03003 470 DUAL POWER MOSFET’s IN HERMETIC 6 PIN ISOLATED PACKAGE SET SM6F151* SM6F251* SM6F351* SM6F451* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low

16N50

Abstract: 16N50P IXFA16N50P IXFH16N50P IXFP16N50P IXYS Corporation
Contextual Info: IXFA16N50P IXFP16N50P IXFH16N50P PolarHVTM HiperFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 16A Ω ≤ 400mΩ ≤ 200ns TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS

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IXBH16N170

Abstract: 16N170 IXBT16N170
Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = 1700V IC90 = 16A VCE sat ≤ 3.3V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 16A VCE sat ≤ 3.3V IXBH16N170 IXBT16N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

400v 20 amp mosfet

Abstract: APT6032HLL
Contextual Info: APT6032HLL 600V 16A 0.320Ω R POWER MOS 7 MOSFET TO-258 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

3bdaa

Abstract: A45B 50B06 D876
Contextual Info: 123455617897A66666 81983B6 6!"B6##47456!"B7433$74B45387B B B 1 %99$7!9&B447B'!5B2 B B54!7B*478B 1 6 6!"B8$$B+,B 1 -94""45B744!!6"6&.B4/45B4"81BDB!B 1 ,!"67!40B!50B4A47!$74B98A453!40B 1 -94""45B"85 47AB3!6"6&B

GFM 64A

Abstract: GDV 64A GFM 85A 625 GFG SA40A GFM 57, TVS 33 TVS SMC tvs SMC MARKING GHR 26A 79mcc
Contextual Info: MCC TRANSIENT VOLTAGE SUPPRESSORS 400W TVS / DO-41 MCC PART NUMBER P4KE6.8 P4KE6.8A P4KE7.5 P4KE7.5A P4KE8.2 P4KE8.2A P4KE9.1 P4KE9.1A P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 P4KE15A P4KE16 P4KE16A P4KE18 P4KE18A P4KE20 P4KE20A P4KE22

T0257AA

Contextual Info: SEMTECH CORP SflE D • fl 1 3 T 1 3 ^ SUPERFAST RECTIFIERS IN HERMETIC ISOLATED T0257AA PACKAGE DD03007 Olb SM1U21* SM1U41* SM1U51* SM1U61* These devices offer two ultrafast rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,

IXBH32N300

Abstract: B32N 32N30 IXBT32N300 32N300
Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH32N300 IXBT32N300 VCES = 3000V IC110 = 32A VCE sat ≤ 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR

32N30

Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 32A VCE sat ≤ 3.2V IXBH32N300 IXBT32N300 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR

48n60

Abstract: IXGH48N60 IXGH48N60A3 IXGA48N60A3 48N60A3 IXGP48N60A3 1660I C5036
Contextual Info: GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching IXGA48N60A3 IXGH48N60A3 IXGP48N60A3 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: High Voltage IGBT w/ Sonic Diode IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 70ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M

Contextual Info: IXGH 32N170A IXGT 32N170A High Voltage IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A IC90 TC = 90°C 21 A ICM TC = 25°C, 1 ms

200n60

Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40

752 C 1600 V CAPACITOR

Abstract: 16N170
Contextual Info: High Voltage IGBT IXGH 16N170 VCES IXGT 16N170 IC25 VCE sat Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

48n60a3

Contextual Info: GenX3TM 600V IGBT w/Diode VCES = 600V IC110 = 48A VCE sat ≤ 1.35V IXGH48N60A3D1 Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V

IXGH 32N170A

Abstract: 32N170A IXGT32N170A
Contextual Info: IXGH 32N170A IXGT 32N170A High Voltage IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A IC90 TC = 90°C 21 A ICM TC = 25°C, 1 ms

Contextual Info: IXGH48N60A3D1 GenX3TM 600V IGBT w/Diode VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V

IXGH48N60A3D1

Abstract: 48N60A3 48n60 IXGH48N60
Contextual Info: GenX3TM 600V IGBT with Diode IXGH48N60A3D1 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

32N90B2

Abstract: 32n90
Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30

40n60 igbt

Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263

Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30