N60C Search Results

Contextual Info: DIXYS ADVANCED TECHNICAL INFORMATION High Speed IGBT with Diode IXSH 30 N60CD1 N60CD1 IXST 30 N60CD1 V CES I Short Circuit SOA Capability 600 V 55 A C25 V C E sat 2.5 V t fi 70 ns TO-247AD (IXSH) Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C

IXSH30N60CD1

Abstract: IXSK30N60CD1 IXST30N60CD1
Contextual Info: High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE sat t fi 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V Maximum Ratings VCGR

n60c

Abstract: ci lm 317
Contextual Info: 0IXYS ADVANCEDTECHNICALINFORMATION High Speed IGBT with Diode N60CD1 N60CD1 IXST30 N60CD1 CES ^C25 VCE sat t fi Short Circuit SOA Capability 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings 600 V vCGR 600 V VGES vGEM

n60c

Abstract: IXSH30N60CD1 IXSK30N60CD1 IXST30N60CD1 TO-264 Jedec package outline N60CD1
Contextual Info: ADVANCED TECHNICAL INFORMATION High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 V CES I C25 V CE sat t fi Short Circuit SOA Capability = = = = 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

Contextual Info: High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE sat t fi 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V Maximum Ratings VCGR

N60C3

Abstract: SPP03N60C3
Contextual Info: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72FP 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\

3G72-31

Contextual Info: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72-31 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\

Contextual Info: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72FP 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\

k1117

Abstract: R36W power transistor k1821 L46R k1518 k1117 transistor k2225 transistor k2225 k1317 transistor k1317
Contextual Info: AND8009/D ECLinPS Plus SPICE Modeling Kit Prepared by: Senad Lomigora, Paul Shockman ON Semiconductor Broadband Applications Engineering http://onsemi.com APPLICATION NOTE Schematic Information The kit contains representative input and output schematics, netlists, and waveform used for the ECLinPS

n60c

Abstract: NA60 NA60 resistor Rn65d resistor na65 10 resistor NE55 RN60D N55D Resistors NC55 dale rn60c
Contextual Info: MODELS NE, NC, CT, NA Metal Film Resistors Military, MIL-R-10509, Qualified, Type RN, Precision FEATURES • Low noise and low inductance characteristics • Blue epoxy encapsulation over moisture resistant polyimide varnish undercoat • Special marking available

R36W

Abstract: k1420 N52C N38C l46r k0114 N53C transistor k1117 k2225 transistor transistors k2628
Contextual Info: AND8009/D ECLinPS Plus SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman ON Semiconductor Broadband Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information

200n60

Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40

R87c196

Contextual Info: I N TE L CO RP 31E D UP/PRPHLS in te l • 40Sbl?S, 00=11535 4 ■ IPKUyiüfflOMÄKy T - 4 9 - l% jÇ > 87C196KB/83C196KB/80C196KB 16-BIT HIGH PERFORMANCE CHMOS MICROCONTROLLER 87C196KB — 8 Kbytes of On-Chip EPROM 83C196KB — 8 Kbytes of Factory Mask-Programmed ROM

k2324

Abstract: k1821 k2225 k1317 power transistor k1821 k1213 k1117 k0313 k2225 transistor N13R
Contextual Info: AND8009/D ECLinPS Plus SPICE Modeling Kit Prepared by: Senad Lomigora, Paul Shockman ON Semiconductor Broadband Applications Engineering http://onsemi.com APPLICATION NOTE Schematic Information The kit contains representative input and output schematics, netlists, and waveform used for the ECLinPS

40n60 igbt

Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263

N60C3

Abstract: SP000216296 n60c P-TO-220-3-31
Contextual Info: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72FP 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\

IN34A

Abstract: 1N60C IN82A IN67A in69a IN56A 1n62 diode IN34 diode 1N142 diode diode IN97
Contextual Info: Iñ DE I b l E E m ? ? D D 0 D D 7 D 4 612 24 77 MICR OWA VE DIODE CORP 18C 0 0 0 7 0 D T - Of ón CROWAVE DIODE CORPORATION . GERMANIUM DIODES r . J r JN34 1N34 4AS A IN3 1 N 3 5 IN38 1N38A 1 N3 1N 4SB 8 1 1N N5 510 1 1N N5S2 2A 1 1N N5 54 4A 1N56 IN5 6 A

SP000216296

Contextual Info: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\