70.4 L MARKING Search Results

35 15 rail en 50022

Abstract: 70.4 L marking en 50022 ts 35
Contextual Info: Electronic housings WEB housing system housing system System advantages: • Open modules can be snapped together to any length • Complete custom design possible • The modular design enables quick assembly • High torsional rigidity due to the firm interconnection of the

TELEFUNKEN* U 413 B

Abstract: MAR 641 TRANSISTOR transistor MAR 439
Contextual Info: T emic BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-araplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96T Marking: BFR96T

LCD-020N004A

Abstract: LCD CHARACTER CODE vishay 2 line LCD display LCD-020N004B
Contextual Info: LCD-020N004A, LCD-020N004B Vishay 20 x 4 Character LCD FEATURES • • • • • • • • • • MECHANICAL DATA ITEM Type: Character Display format: 20 x 4 characters Built-in controller: KS 0066 or equivalent Duty cycle: 1/16 5 x 8 dots includes cursor

v 817 y

Contextual Info: H ITACH I 2SC5218-Silicon NPN Epitaxial Transistor Application MPAK V HF & UHF wide band amplifier Features • High gain bandwidth product f j = 9 GHz typ. • High gain, low noise figure PG = 13.0 dB typ., NF = 1.2 dB typ. at f = 900 MHz W- Table 1 Absolute M axim um Ratings Ta = 25°C

LCD-020N004A

Abstract: LCD-020N004B
Contextual Info: LCD-020N004A, LCD-020N004B Vishay 20 x 4 Character LCD FEATURES • • • • • • • • • • MECHANICAL DATA ITEM Type: Character Display format: 20 x 4 characters Built-in controller: KS 0066 or equivalent Duty cycle: 1/16 5 x 8 dots includes cursor

554 CA3

Abstract: LC-XD1217P LC-XD1217PG LC-XD1217 LC-XD1217APG 70.4 L marking M511 ati 361 G104101 Discharge
Contextual Info: Individual Data Sheets LC-XD1217PG/APG* For standby power supplies. Expected trickle design life: 10 – 12 years at 20 °C according to Eurobat. VdS G104101 Dimensions mm M5 M5 11.8 11.8 12.5 12.5 12.5 M511 M5 M5 M5 Terminal type (option): 11.8 11 11 LC-XD1217PG:

LCD-020N004A

Abstract: LCD-020N004B
Contextual Info: LCD-020N004A, LCD-020N004B www.vishay.com Vishay 20 x 4 Character LCD FEATURES • • • • • • • • • • • MECHANICAL DATA ABSOLUTE MAXIMUM RATINGS STANDARD VALUE 98.0 x 60.0 77.0 x 25.2 0.55 x 0.55 0.60 x 0.60 93.0 x 55.0 2.95 x 4.75 ITEM

52-257-006-A

Abstract: 52-227-004 BARRIER TERMINAL if filter 38,9 marking AOO PCB terminal blocks 52-160-004-A
Contextual Info: Filtered Terminal Blocks Barrier Strip Filtered Terminal Blocks The barrier strip filtered terminal block is designed provide excellent EMI/RFI filtering of AC and DC power lines and control lines. This terminal block is available in various sizes, with terminal for soldering,

tb 1253 ang

Contextual Info: BFR90A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure

transistor MAR 819

Abstract: transistor MAR 543 sl2 357 BFS17
Contextual Info: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4

70.4 L marking

Abstract: 14N03 351 D-PAK
Contextual Info: NTD14N03R Power MOSFET 14 Amps, 25 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

Contextual Info: DSub 8350 Series Socket Connector, 50 Position • IDC com patible • Low er insertion/w ithdraw al force than other 50 position products • Available in either preassem bled or tw o piece covers • Available in either open or closed end cover • M ounting options include #4-40 UNC or m etric

bfr96s

Contextual Info: SIEMENS BFR 96S NPN Silicon RF Transistor • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 2 GHz at collector currents from 10 mA to 70 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!

TRANSISTOR PEC 545

Contextual Info: BFR96T V IS HAY Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure

T14N03

Abstract: T14 N03 t14-n03 14n03 MOSFET n03
Contextual Info: NTD14N03R Power MOSFET 14 Amps, 25 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

ML 1557 b transistor

Abstract: lm 1766 ic LM 748
Contextual Info: TEMIC BFR90A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

N03G

Abstract: t14 N03G T14N03g 14N03 ON N03G t14-n03 Datasheets N03G 369D NTD14N03R NTD14N03R-001
Contextual Info: NTD14N03R Power MOSFET 14 Amps, 25 Volts N-Channel DPAK http://onsemi.com Features •ăPlanar HD3e Process for Fast Switching Performance •ăLow RDS on to Minimize Conduction Loss •ăLow Ciss to Minimize Driver Loss •ăLow Gate Charge •ăOptimized for High Side Switching Requirements in

t14-n03

Abstract: 14n03 T14 N03 t14n03 369D NTD14N03R NTD14N03RG NTD14N03RT4 NTD14N03RT4G DSA0032463
Contextual Info: NTD14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK http://onsemi.com Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

TL 2262

Abstract: SC 2262 2SC5998 SC-59A
Contextual Info: 2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0101 Rev.1.01 Jan 27, 2006 Features • High Transition Frequency fT = 11 GHz typ. • High gain and Excellent Efficiency Maximum Available Gain MAG = +22 dB typ. at VCE = 3.6 V, IC = 100 mA, f = 500 MHz

MAR 618 transistor

Abstract: MAR 641 TRANSISTOR bfr96ts MAR 527 transistor L 0403 817
Contextual Info: Temic BFR96TS Semiconductor i Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96TS Marking: BFR96TS Plastic case ~ TO 50

Contextual Info: Miniature Aluminum Electrolytic Capacitors NSR Series LEADED FEATURES • NEW GENERATION OF LOW PROFILE SIZING 5mm .200” HEIGHT • SPACE SAVING AT COMPETITIVE PRICING • TAPING FOR AUTOMATIC INSERTION AVAILABLE CHARACTERISTICS Rated Working Voltage Range

zo 107 NA P 611

Abstract: BFR96 L 0403 817 BFR96T
Contextual Info: TEMIC BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain

t14n03

Abstract: 14n03 T14 N03 t14-n03 NTD14N03RT4 369D NTD14N03R
Contextual Info: NTD14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

LCD-020M004A

Contextual Info: LCD-020M004A Vishay 20 x 4 Dots Character LCD FEATURES • 5 x 8 dots with cursor • Built-in controller KS 0066 or Equivalent • + 5V power supply (Also available for + 3V) • 1/16 duty cycle • B/L to be driven by pin 1, pin 2 or pin 15, pin 16 or A.K (LED)