700V Search Results

transistor G11

Abstract: to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor
Contextual Info: TS13003 High Voltage NPN Transistor TO-92 TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

POWER MOSFET 4600

Abstract: 1A 700V MOSFET
Contextual Info: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

5A 700V MOSFET

Abstract: 700v 5A mosfet
Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: TK5A65D * Category: Transistors /Power MOSFET/Nch 500V<VDSS 700V

TSC5304EDCP

Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

NPN Transistor 1.5A 700V

Abstract: NPN Transistor VCEO 1200V BUV48CFI NPN 1.5A 1200V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV48CFI DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Current Capability ·Fast Switching Speed APPLICATIONS ·Designed for switching and industrial applications from

tl431,3 pin driver smps ic

Abstract: 1N4148 equivalent SMD MOSFET 700V TO 220 BZW06-154 L6590D cxb 100 transformer SMD optocoupler IC PC817 PC817 ferrite n67 BC337 pc817
Contextual Info: L6590 FULLY INTEGRATED POWER SUPPLY • ■ ■ ■ WIDE-RANGE MAINS OPERATION "ON-CHIP" 700V V BR DSS POWER MOS 65 kHz INTERNAL OSCILLATOR 2.5V ± 2% INTERNAL REFERENCE STANDBY MODE FOR HIGH EFFICIENCY AT LIGHT LOAD OVERCURRENT AND LATCHED OVERVOLTAGE PROTECTION

1604KL-04W

Abstract: 0876
Contextual Info: 1604KL 40 X 10L NMBTC.COM / 818.341.3355 Characteristic Curves General Specifications Motor Protection: Auto Restart/Polarity Protection Insulation Resistance: 10M Ω or over with a DC500V Megger Dielectric Withstand Voltage: AC 700V 1s Allowable Ambient Temperature Range:

sl1053

Abstract: SL1057 sl10
Contextual Info: SL10 2 6 maximum arrester series duty SEMITRON GREENTUBE SERIES M A XIM U M DUTY 3 TERMINAL ARRESTER TOTALLY NON-RADIOACTIVE ELECTRICAL CHARACTERISTICS 275V 400V 700V DC SPARKOVER V 200-350 300-500 490-910 (i) IMPULSE SPARKOVER (max) (V) 800 900 1000

Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: TK12J60U Category: Transistors /Power MOSFET/Nch 500V<VDSS 700V

UL1007 AWG24

Abstract: megger 2806RL
Contextual Info: 2806RL 70 X 15L EMINEBEA.COM Auto Restart/Polarity Protection 25°C 60,000 Hours (CXX) 10M Ω or over with a DC500V Megger AC 700V 1s -10°C ~ +70°C (Operating) -40°C ~ +70°C (Storage) (non-condensing environment) inch Units: (mm) 2.40 (61.5 ± 0.3)

viper 100

Abstract: VIPER100ASP VIPER100A VIPER100SP VIPER100 viper 224 VIPER100 Application Note FC0012 Fc0013 ST viper 100A sc1019 VIPER 300 series VIPer100
Contextual Info: VIPer100/SP VIPer100A/ASP  SMPS PRIMARY I.C. PRELIMINARY DATA * T YPE V DSS In R DS(on) VIPer100/SP 620V 3 A 2.5 Ω VIPer100A/ASP (*) 700V 3 A 2.8 Ω 10 (*) Target data for VIPer100A/ASP 1 PENTAWATT HV FEATURE • ADJUSTABLE SWITCHING FREQUENCY UP TO 200KHZ

sc1019

Abstract: viper20a VIPer20 equivalent FC00500 viper20 application notes Viper20 application SC1054 FC00491 VIPER20ASP
Contextual Info: VIPer20/SP/DIP VIPer20A/ASP/ADIP SMPS PRIMARY I.C. PRELIMINARY DATA * V DSS In R DS(on) VIPer20/SP/DIP TYPE 620V 0.5 A 16 Ω VIPer20A/ASP/ADIP 700V 0.5 A 18 Ω (*) Target data for VIPer20A/ASP/ADIP PENTAWATT HV FEATURE • ADJUSTABLE SWITCHING FREQUENCY UP

Contextual Info: 2404KL 60 X 10L EMINEBEA.COM Auto Restart/Polarity Protection 10M Ω or over with a DC500V Megger AC 700V 1s B50 Class: -10°C ~ +60°C (Operating) B30, B40 Class: -10°C ~ +70°C (Operating) All Class: -40°C ~ +70°C (Storage) (non-condensing environment)

04n70bi

Abstract: 04N70B 04N70 TO220CFM AP04N70BI-H TO-220CFM
Contextual Info: AP04N70BI-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 700V RDS ON 2.4Ω ID G 4A S Description AP04N70 series are specially designed as main switching devices for

02n70

Abstract: AP02N70EJ 02N70EJ AP02N70 250B1 02N7
Contextual Info: AP02N70EJ RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ ESD Improved Capability G ▼ Simple Drive Requirement BVDSS 700V RDS ON 7Ω ID 1.6A S Description G D TO-251(J) S AP02N70 from APEC provide the designer with the best combination

Contextual Info: 5015KL 127 X 38L EMINEBEA.COM Auto Restart/Polarity Protection In H2O 10M Ω or over with a DC500V Megger Static Pressure AC 700V 1s B50 Class: -10°C ~ +60°C (Operating) B10 ~ B40 Class: -10°C ~ +70°C (Operating) All Class: -40°C ~ +70°C (Storage)

STD2NC70Z

Abstract: STD2NC70Z-1
Contextual Info: STD2NC70Z STD2NC70Z-1 N-CHANNEL 700V - 4.1Ω - 2.3A DPAK/IPAK Zener-Protected PowerMESH III MOSFET TYPE STD2NC70Z STD2NC70Z-1 • ■ ■ ■ ■ VDSS RDS on ID 700V 700V < 4.7Ω < 4.7Ω 2.3 A 2.3 A TYPICAL RDS(on) = 4.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY

L6590

Abstract: SO16W
Contextual Info: L6590  FULLY INTEGRATED POWER SUPPLY FIPS PRODUCT PREVIEW Features WIDE-RANGE MAINS OPERATION ”ON-CHIP” 700V BVDSS POWER MOS 65kHz INTERNAL OSCILLATOR 2.5V ±2% INTERNAL REFERENCE STANDBY MODE FOR HIGH EFFICIENCY AT LIGHT LOAD OVERCURRENT AND LATCHED OVERVOLTAGE PROTECTION

TSC5302DCH

Abstract: TSC5302DCP DIODE G14
Contextual Info: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: 3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D REF. B A B C D E F G H J K Collector 2 E C G H F 3

TRANSISTOR bu2508df

Abstract: BU2508DF BU2508DF equivalent NPN Transistor 1500V TV power transistor datasheet Silicon Diode Switching Diode 700v using of damper in Horizontal Output Transistor 700 v power transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2508DF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of

BU2508DX

Abstract: transistor bu2508dx BU2508Dx equivalent using of damper in Horizontal Output Transistor NPN Transistor 1500V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2508DX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of

bu808 equivalent

Abstract: BU808 equivalent bu808 bu808 transistor transistor bu808
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU808 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in three-phase AC motor control systems