TSM2N70 Search Results

POWER MOSFET 4600

Abstract: 1A 700V MOSFET
Contextual Info: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

mosfet to92

Abstract: mosfet to92 high current marking B12 diode TSM2N7000KCT-A3 low vgs mosfet to-92 TSM2N7000KCT
Contextual Info: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Source 2. Gate 3. Drain VDS V 60 Features RDS(on)(Ω) ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram ● Low On-Resistance ● ESD Protection ● High Speed Switching ●

Contextual Info: s TAIWAN SEMICONDUCTOR TSM2N7002E 60V N-Channe! MOSFET b RoHS y CO M PLIANCE SOT-23 •à 1 2 SOT-323 «t PRODUCT SUM M ARY P in D e fin itio n : 1. Gate 2. Source 3. Drain V ds V) R oS (on)(Q ) lD (mA) 3 @ V CS= 1Û V 300 4 @ V<;s z 4.5V 200 60 Features

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A

Abstract: n-channel mosfet transistor 18BSC
Contextual Info: Preliminary TSM2N70 700V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 7 @ VGS =10V 0.8 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

sot-363 n-channel mosfet

Abstract: Dual N-Channel mosfet sot-363 Dual N-Channel MOSFET n-channel mosfet transistor N-Channel mosfet sot-363
Contextual Info: TSM2N7002KD 60V N-Channel MOSFET SOT-363 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Source 2 6. Drain 2 2. Gate 2 5. Gate 1 3. Drain 1 4. Source 1 60 Low On-Resistance ● ESD Protection ● High Speed Switching ● Low Voltage Drive 2 @ VGS = 10V

Contextual Info: TSM2N7002E 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (mA) 3 @ VGS = 10V 300 4 @ VGS = 4.5V 200 Block Diagram ● Low On-Resistance: 3Ω ● Low Input and Output Leakage

TSM2N7000

Abstract: TSM2N7000CT MOSFET high voltage
Contextual Info: TSM2N7000 60V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 60V ID = 200mA RDS on , Vgs @ 10V, Ids @ 500mA = 5.0Ω General Description The TSM2N7000 is produced using high cell density, DMOS technology. These products have been designed to

TSM2N7002

Abstract: TSM2N7002E TSM2N7002ECU TSM2N7002ECX
Contextual Info: TSM2N7002E 50V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 50V RDS on , Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω Features Advanced trench process technology No minority carrier storage time

n-channel mosfet SOT-23

Abstract: TSM2N7004
Contextual Info: TSM2N7004 Preliminary 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (mA) 1.2 @ VGS = 10V 300 1.7 @ VGS = 4.5V 300 Block Diagram ● Fast Switching Speed ● Low Input and Output Leakage

MOSFET BA7

Abstract: TSM2N7000 TSM2N7000CT
Contextual Info: TAIW AN $ SEMICONDUCTOR pb RoHS TSM2N7000 60V N-Channei MOSFET COM PLIAN CE Pin Definition; PRODUCT SUMMARY 1. S o u rce 2. Gate Vos (V) R D S(on )(Q ) 60 5 @ VGS = 1 0 V Id (mA) 3. Drain 75 1 23 Features Block Diagram • Fast Switching Speed • Low Input and Output Leakage

TSM2N7000KCT

Abstract: TSM2N7000KCT-A3 n-channel mosfet transistor TSM2N7000K mosfet to92 high current mosfet to92 low voltage A09 MOSFET
Contextual Info: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Source 2. Gate 3. Drain 60 Features ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram ● Low On-Resistance ● ESD Protection ● High Speed Switching ●

TSM2N7000

Abstract: TSM2N7000CT
Contextual Info: TSM2N7000 60V N-Channel MOSFET TO-92 Pin Definition: 1. Source 2. Gate 3. Drain PRODUCT SUMMARY VDS V RDS(on)(Ω) 60 Features 5 @ VGS = 10V ID (mA) 75 Block Diagram ● Fast Switching Speed ● Low Input and Output Leakage Application ● Direct Logic-Level Interface: TTL/CMOS

P N-Channel D-S MOSFET

Abstract: N and P MOSFET
Contextual Info: TA IW A N S E M IC O N D U C T O R $ TSM2N7000 60V N-Channe! MOSFET b RoHS C O M P L IA N C E Pin Definition; 1. Source 2. Gate 3. Drain PRODUCT SUMMARY Vos V) RDS(on)(Q) 60 5 @ VGS = 10V Id (mA) 75 1 23 Features Block Diagram • Fast Switching Speed •

BP mosfet marking

Abstract: tsm2n7002k
Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive ID (mA) 2 @ VGS = 10V 300

Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (mA) 2 @ VGS = 10V 300

n-channel mosfet SOT-23

Abstract: MOSFET N SOT-23 "N-Channel MOSFET" Power MOSFET N-Channel sot-23 TSM2N7002 FULLY PROTECTED MOSFET MOSFET SOT-23 n-channel mosfet transistor TSM2N7002KCX
Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive ID (mA) 2 @ VGS = 10V 300 4 @ VGS = 4.5V

TSM2N7002

Abstract: TSM2N7002CX N-CHANNEL MOSFET 30V 2A SOT-23 n-channel mosfet SOT-23
Contextual Info: E TAIWAN TSM2N7002 S E M IC O N D U C T O R 60V N-Channei MOSFET pb RoHS CO M PLIANCE SOT-23 & 1 PRODUCT SUM M ARY P in D e fin itio n : 1. Gate 2. Source V DS (V) 3. Drain 60 2 Features RDS(on){Q) Id (mA) 7.5 @ Vqs = 10V 300 7.5 @ V Gs= 4.5V 200 Block Diagram

Marking d12

Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (A) 2 @ VGS = 10V 300

SOT92

Abstract: TSM2N7000 TSM2N7000CT
Contextual Info: TSM2N7000 60V N-Channel MOSFET SOT-92 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Source 3. Drain 60 5 @ VGS = 10V Features ID (mA) 500 Block Diagram ● Fast Switching Speed ● Low Input and Output Leakage Application ● Direct Logic-Level Interface: TTL/CMOS

TSM2N7002CX

Abstract: TSM2N7002
Contextual Info: TSM2N7002 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (mA) 7.5 @ VGS = 10V 300 7.5 @ VGS = 4.5V 200 Block Diagram ● Fast Switching Speed ● Low Input and Output Leakage Application

Contextual Info: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY VDS V RDS(on)() Pin Definition: 1. Source 2. Gate 3. Drain 60 Features ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram  Low On-Resistance  ESD Protection  High Speed Switching  Low Voltage Drive

sot-363 n-channel mosfet

Abstract: TSM2N7002ED TSM2N7002EDCU6
Contextual Info: TSM2N7002ED 50V Dual N-Channel Enhancement Mode MOSFET Pin assignment: 1. Source 2 6. Drain (2) 2. Gate (2) 5. Gate (1) 3. Drain (1) 4. Source (1) VDS = 50V RDS (on), Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω Features Ordering Information

Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Source 3. Drain VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (mA) 2 @ VGS = 10V 300 4 @ VGS = 4.5V

B11 marking code

Abstract: 1A 700V MOSFET mosfet 700V 2A
Contextual Info: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.