70A 1200V IGBTS Search Results

APT70GR120J

Contextual Info: APT70GR120JD60 APT70GR120JD60 1200V, 70A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.

APT70GR120J

Contextual Info: APT70GR120J APT70GR120J 1200V, 70A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.

V544

Abstract: 70A 1200V IGBTS
Contextual Info: APT70GR120B2_L APT70GR120B2 APT70GR120L 1200V, 70A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.

SMCS6G060-120-1

Abstract: SMCS6G070-060-1 Analog tachometer driver 210C 2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM sensorless bdc motor speed control driving IC 5041
Contextual Info: SENSITRON SEMICONDUCTOR SMCS6G070-060-1 SMCS6G060-120-1 TECHNICAL DATA DATASHEET 5041, Preliminary Sensorless Brushless DC Motor Driver Module in a Power Flatpack 600V/70A, 1200V/60A DESCRIPTION: The SMCS6GXXX-XXX-1 is an, integrated three-phase brushless DC motor controller/driver subsystems

SMC6G070-060-1

Abstract: diode s4 53a SMC6G060-120-1 IGBT 1500v 50A 210C bdc motor speed control igbt 1500V
Contextual Info: SENSITRON SEMICONDUCTOR SMC6G070-060-1 SMC6G060-120-1 TECHNICAL DATA DATASHEET 4246, REV D Brushless DC Motor Driver Module in a Power Flatpack 600V/70A, 1200V/60A DESCRIPTION: The SMC6GXXX-XXX-1 is an, integrated three-phase brushless DC motor controller/driver subsystems

brushless motor 6236 driver

Abstract: SMCT6G070-060-1 SMCT6G060-120-1 RBE03010 lm 586 zener diode phc 47 RC servo motors "dc gain" transfer function time constant servo design bdc motor speed control zener diode phc 24 zener diode phc 16
Contextual Info: SENSITRON SEMICONDUCTOR SMCT6G070-060 SMCT6G060-120 TECHNICAL DATA DATA SHEET 5044, PRELIMINARY RELEASE TORQUE CONTROLLER BRUSHLESS DC MOTOR DRIVER MODULE 600V/70A, 1200V/60A FEATURES: • True Four Quadrant Complementary Switching. • Fully integrated 3-Phase Brushless DC Motor Control Subsystem includes power stage, non-isolated driver stage,

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

IC 7407

Abstract: IC 7407 datasheet DIODE 59 APT35GP120B2DF2 228F 70A 1200V IGBTS
Contextual Info: APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

IC AND GATE 7408

Abstract: IC 7408 7408 7408 ic datasheet ic 7408 datasheet 7408 datasheet 7408 ic data sheet IC 7408 APT30DF120 7408 and
Contextual Info: APT35GP120JDF2 1200V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: FGL35N120FTD tm 1200V, 35A Trench IGBT Features General Description • Field Stop Trench Technology • High Speed Switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche

FGL35N120FTDTU

Abstract: FGL35N120FTD 16S-W c368w
Contextual Info: FGL35N120FTD tm 1200V, 35A Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche

IC 7409

Abstract: APT35GP120J
Contextual Info: APT35GP120J 1200V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

228F

Abstract: APT35GP120B T0-247
Contextual Info: APT35GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

ic 7407

Abstract: 7407 APT35GP120B2DF2 IC 7407 datasheet 228F
Contextual Info: APT35GP120B2DF2 TYPICAL PERFORMANCE CURVES APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching

IC AND GATE 7408

Abstract: data sheet IC 7408 7408 IC AND GATE 7408 specification sheet IC 7408 IC 7408 DATASHEET 7408 AND GATE datasheet 7408 datasheet APT35GP120JDF2 7408 AND gate ic
Contextual Info: TYPICAL PERFORMANCE CURVES APT35GP120JDF2 APT35GP120JDF2 1200V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

transistor* igbt 70A 300 V

Abstract: 70A 1200V IGBTS Rectifier, 70A, 1000V Super-247 Package irg4psh71udp IRFPS37N50A diode 70A
Contextual Info: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching

APT35GP120B2DQ2G

Abstract: APT10035LLL APT35GP120B2DQ2
Contextual Info: APT35GP120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT35GP120B2DQ2 APT35GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

APT10035LLL

Abstract: APT35GP120JDQ2 sot-227 weight
Contextual Info: APT35GP120JDQ2 1200V TYPICAL PERFORMANCE CURVES APT35GP120JDQ2 ® C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.

IRG4PSH71UD

Abstract: IRG4P IRF 547 MOSFET IRFPS37N50A MOSFET 1000V 140A TO274
Contextual Info: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

Contextual Info: APT35GP120JDQ2 1200V TYPICAL PERFORMANCE CURVES APT35GP120JDQ2 ® C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.

Contextual Info: APT35GP120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT35GP120B2DQ2 APT35GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

10 AMP 1200V RECTIFIER DIODE

Abstract: 600V 25A Ultrafast Diode 1200v diode to247 ultrafast diode 10a 300v smps 450W ULTRA fast rectifier diode 30A 200V cathode common ULTRA fast rectifier diode 30A 200V anode common 1200v 30A to247 Diode C3 1200v 25A to247
Contextual Info: SML25EUZ06B Enhanced Ultrafast Recovery Diode 600 Volt, 25 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 25EUZ06B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with