APT30DF120 Search Results

Contextual Info: APT30DF120HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 1200V IC = 30A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • •

Contextual Info: APT30DF120HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 1200V IC = 30A @ Tc = 80°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~       

APT12031JLL

Abstract: mosfet 600V 30A MOSFET 1200v 30a APT30DF120
Contextual Info: APT12031JLL 1200V 30A 0.310Ω POWER MOS 7 R MOSFET Symbol VDSS ID SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel

APT12031JFLL

Abstract: APT12031JLL
Contextual Info: APT12031JFLL 1200V 30A 0.33 Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

228F

Abstract: APT35GP120B T0-247
Contextual Info: APT35GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT12040JFLL

Abstract: APT30DF120
Contextual Info: APT12040JFLL 1200V 24A 0.400Ω POWER MOS 7 R Symbol VDSS ID SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel

88 diode

Abstract: 22a ic APT11044JFLL
Contextual Info: APT11044JFLL 1100V 22A 0.440Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT12031JFLL 1200V 30A 0.33 Ω R POWER MOS 7 FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT10026L2LL 1000V 38A 0.260Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.

APT12040L2FLL

Contextual Info: APT12040L2FLL 1200V 30A 0.400Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

IC 7431 datasheet

Abstract: 185F APT45GP120B2DF2 800V16A
Contextual Info: APT45GP120B2DF2 APT45GP120B2DF2 TYPICAL PERFORMANCE CURVES 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT12040

Contextual Info: APT12040JLL 1200V 24A 0.400Ω POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS ON ® and Qg. Power MOS 7 combines lower conduction and switching losses

Contextual Info: APT12057JFLL 1200V 19A 0.570Ω R POWER MOS 7 FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

IC 7407

Abstract: IC 7407 datasheet DIODE 59 APT35GP120B2DF2 228F 70A 1200V IGBTS
Contextual Info: APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

IC AND GATE 7408

Abstract: IC 7408 7408 7408 ic datasheet ic 7408 datasheet 7408 datasheet 7408 ic data sheet IC 7408 APT30DF120 7408 and
Contextual Info: APT35GP120JDF2 1200V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT12057B2FLL

Abstract: APT12057LFLL
Contextual Info: APT12057B2FLL APT12057LFLL 1200V 22A 0.570Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT12031

Contextual Info: APT12031JLL 1200V 30A 0.310Ω R POWER MOS 7 MOSFET Symbol VDSS ID SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel

Contextual Info: APT12040JFLL 1200V 24A 0.400Ω R POWER MOS 7 Symbol VDSS ID SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel

APT45GP120B

Abstract: T0-247
Contextual Info: APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

diode 640

Abstract: 106F APT11058B2FLL APT11058LFLL APT30DF120
Contextual Info: APT11058B2FLL APT11058LFLL 1100V 20A 0.580Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

ic 7407

Abstract: 7407 APT35GP120B2DF2 IC 7407 datasheet 228F
Contextual Info: APT35GP120B2DF2 TYPICAL PERFORMANCE CURVES APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT45GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT45GP120J 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency