70L7 Search Results

Contextual Info: SONY« CXK 59290 M/TM -70L710U12L 32768-word x 9-bit High Speed CMOS Static RAM D escription CXK59290M 32 pin SOP Plastic The CXK59290M/TM is a 294912 bits high speed CMOS static RAM organized as 32768 words by 9 bits and operates from a single 5V supply. This device is

70L7

Abstract: 70L7GT 70L7 GT HALF WAVE RECTIFIER CIRCUITS 70-L-7 70L7GT rectifier beam power tube 70L7-GT T414 700 watts power amplifier circuit diagram 70L7-CT
Contextual Info: 70L7-CT PAGE 1 70L7-CT Description and Rating RECTIFIER-BEAM POWER AMPLIFIER GENERAL DESCRIPTION Principal Application: The 70L7-GT i s a g l a s s t y p e t u b e c o n t a i n i n g a h a l f - w a v e r e c t i f i e r and a beam amplifier power a m p l i f i e r

70l7gt

Abstract: 70L7GT rectifier beam power tube 70L7-GT 117z3 70l7 117z3 tube newark electronic tube 19H5
Contextual Info: 70L7GT TUNG-SOL COMBINED H A L F WAV E AND BEAM POWER RECTIFIER AMPLIFIER COATED U N I P O T E N T I A L CATHODES HEATER 70 VO L T S 0 .1 5 AMPERE AC OR DC BOTTOM VIEW INTERMEDIATE SHELL 8-PIN OCTAL ANY MOUNTING P O S I T I O N GLASS BULB THE 7 0 L 7 G T I S A COM BINE D R E C T I F I E R AND POWER O U TPU T

70l7

Contextual Info: TO SH IBA THMY12E11A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12E H A is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708AFT/AFTL DRAMs and an unbuffer on a printed circuit board.

12sh7

Abstract: 12bz7 6AR5 3S4 tube 1AJ5 12ay7 5y4g 12BY7A 12B4A 12sh7 tube
Contextual Info: H EA TER V O L T A G E S A P P L IC A T IO N TUMG-SOL 1.4 INC. ELECTRON T R IO D E S 7A4 12H4 37 76 955 5718 5719 5744 9002 XXL 2C51 5BZ7Q 6AH 7GT 6BK7 6BK7A 6BK7B 6BF7 6BQ7A 6BZ7 6BX8 6DA7 6J6 6J6A 7AF7 7F7 7F8 7N7 5670 12AH7GT 12AT7 14AF7/XXD 14F7 14F8 19J6# %

MB84256A

Abstract: MB84256 256x128x8 b842s
Contextual Info: November 1992 Edition 3.1 FUJITSU DATASHFFT MB84256A-70/-70L/-70LL/-10/-10L/-10LL CMOS 256K-BIT LOW POWER SRAM 32,768 WORD x 8-BIT CMOS STATIC RANDOM ACCESS MEMORY WITH DATA RETENTION The Fujitsu MB84256A is a32,768-word by 8-bit static random access memory fabricated with

MB64256

Abstract: 12L marking
Contextual Info: September 1990 Edition 2.0 FuflTSU DATA SHEET MB84256A - 7 0 / 7 0 U 7 0 L U - 1 0 / 1 O L / 1 0 L L / - 1 2 / 1 2 L / 1 2 L L / - 1 5 / 1 5 L / 1 5 L L CMOS 256K-BIT LOW POWER SRAM 32K Words x 8 Bits CMOS Static Random Access Memory with Data Retention The Fujitsu MB84256A is a 32,768 words x 8 bits static random access memory

117L7

Abstract: 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7
Contextual Info: TUNS-SOL TECHNICAL DATA TUNG-SOL ELECTRON TUBES TUNG-SOL ELECTRIC INC. ELEC TR O N T U B E DIVISIO N NEW ARK, N. }. U. S. A. PL ATE 275r OCT. 1 1951 C O P Y R IG H T 1 9 0 1 BY T U N O - S O L E L EC TR IC IN C . E L E C T R O N IC T U B E D IV ISIO N N E W A R K . N E W J E R S E Y . U . S. A.

Contextual Info: CXK58257ATM/AYM -7- « uiouiîl 0 L U 8 5 L L /1 0 L U 1 2 L L SONY. 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 58 257A T M /A Y M is a 255K bits. 32.758 words by 8 bits. CMOS static RAM. It is suitable for portable and battery back-up

117z3

Abstract: 117z3 tube 7017g Scans-0017258 MA 117 D
Contextual Info: II7Z3 TUNG-SOL DIODE M IN IATURE TYPE 3' - T H MAX COATED U N IPO TEN TIA L CATHODE HEATER 1 1 7 VOLTS 8 I MAX T -5 * 8 J 4 0 MA. AC OR DC ANY MOUNTING P O SIT IO N M AX NOT E: 0 0 HOT U S E P 1 H <1 OH S O C K E T AS T I E P O S T . GLASS BULB M I N I A T U R E BU T T O N

70l7gt

Abstract: 6k7g 35z5gt 6k6gt 25L6GT 6q7g 70L7-GT 35L6GT 35z5 12k7gt
Contextual Info: SYLVANIA 6 J7 G T Pen tod e 6K 6G T Pentod e 6K 7G T Pentod e "ek B G T " Triode-H exode 6Q 7G T D ouble D iode-Triode D ouble Diode H eptode 12A8GT 6.3 6.3 6K 7G 6K 8G 6Q7G 6.3 6.3 0.30 LE TUBE 0.30 6A8G 12B 8G T Pen tod e-T riode ~ 8 -T T 9 -E 0.15 12F5G T

70l7

Abstract: THMY12E11A70
Contextual Info: TOSHIBA THMY12E11A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12E H A is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708AFT/AFTL DRAMs and an unbuffer on a printed circuit board.

MB84256C

Abstract: MB84256C-10 mb84256c-70 mb84256c-70L
Contextual Info: FUJITSU May 1994 Edition 1.0 DATA SHEET MB84256C-70/-70U-70LU-10/-10U-10LL CMOS 256K-BIT LOW POWER SRAM 32,768 WORD x 8-BIT CMOS STATIC RANDOM ACCESS MEMORY WITH DATA RETENTION The Fujitsu MB84256C is a 32,768-word by 8-bit static random access memory fabricated with a CMOS silicon gate process. The memory utilizes asynchronous