FM20
Abstract: FN812
Text: Power Transistor FN812 ICBO IEBO VCEO hFE VCE sat (Ta=25ºC) Unit µA µA V Ratings 10max 10max 100min 70min 0.3max External Dimensions FM20 (full-mold) 10.0 V a b Typical Switching Characteristics VCC (V) 12 RL (Ω) 4 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5
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FN812
10max
100min
70min
FM20
FN812
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL16TB103J Features Item Summary 10000 H ±5% , 0.25A, 70min, Leaded Lifecycle Stage Non-preferred Standard packaging quantity (minimum) Taping 250pcs Products characteristics table External Dimensions 21(max)x17(max)
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LHL16TB103J
70min,
250pcs
70min
26MHz
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FP812
Abstract: FM20
Text: Power Transistor FP812 ICBO IEBO VCEO hFE VCE sat (Ta=25ºC) Unit µA µA V Ratings 10max 10max –120min 70min –0.3max External Dimensions FM20 (full-mold) 10.0 V a b Typical Switching Characteristics VCC (V) 12 RL (Ω) 4 IC (A) 3 VBB1 (V) –10 VBB2
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FP812
10max
120min
70min
FP812
FM20
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2SC5370
Abstract: FM20
Text: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A Ratings Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A
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2SC5370
10max
40min
70min
90typ
120typ
O220F)
2SC5370
FM20
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FM20
Abstract: FN812 2000IB
Text: Power Transistor FN812 ICBO IEBO VCEO hFE VCE sat (Ta=25ºC) Unit µA µA V Ratings 10max 10max 100min 70min 0.3max External Dimensions FM20 (full-mold) 10.0 V a b Typical Switching Characteristics VCC (V) 12 RL (Ω) 4 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5
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FN812
10max
100min
70min
FM20
FN812
2000IB
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL16TB470K Features Item Summary 47 H ±10% , 3.7A, 70min, Leaded Lifecycle Stage Non-preferred Standard packaging quantity (minimum) Taping 250pcs Products characteristics table External Dimensions 21(max)x17(max)
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LHL16TB470K
70min,
250pcs
52MHz
70min
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ic SE 135
Abstract: TRANSISTOR SE 135 FP812 FM20
Text: Power Transistor FP812 ICBO IEBO VCEO hFE VCE sat (Ta=25ºC) Unit µA µA V Ratings 10max 10max –120min 70min –0.3max External Dimensions FM20 (full-mold) 10.0 V a b Typical Switching Characteristics VCC (V) 12 RL (Ω) 4 IC (A) 3 VBB1 (V) –10 VBB2
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FP812
10max
120min
70min
ic SE 135
TRANSISTOR SE 135
FP812
FM20
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL13TB470K Features Item Summary 47 H ±10% , 2.8A, 70min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 17(max)x14(max)
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LHL13TB470K
70min,
500pcs
52MHz
70min
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2SC5370
Abstract: FM20 2402 transistor
Text: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A 2SC5370 Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A
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2SC5370
10max
40min
70min
90typ
120typ
O220F)
2SC5370
FM20
2402 transistor
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Untitled
Abstract: No abstract text available
Text: Power Transistor FN812 ICBO IEBO VCEO hFE VCE sat (Ta=25ºC) Unit µA µA V Ratings 10max 10max 100min 70min 0.3max External Dimensions TO220F (full-mold) 10.0 V a b Typical Switching Characteristics VCC (V) 12 RL (Ω) 4 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5
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FN812
10max
100min
70min
O220F
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL16TB680K Features Item Summary 68 H ±10% , 3.3A, 70min, Leaded Lifecycle Stage Non-preferred Standard packaging quantity (minimum) Taping 250pcs Products characteristics table External Dimensions 21(max)x17(max)
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LHL16TB680K
70min,
250pcs
52MHz
70min
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ic SE 135
Abstract: TRANSISTOR SE 135
Text: Power Transistor FP812 ICBO IEBO VCEO hFE VCE sat (Ta=25ºC) Unit µA µA V Ratings 10max 10max –120min 70min –0.3max External Dimensions TO220F (full-mold) 10.0 V a b Typical Switching Characteristics VCC (V) –12 RL (Ω) 4 IC (A) –3 VBB1 (V) –10
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FP812
10max
10max
120min
70min
O220F
ic SE 135
TRANSISTOR SE 135
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GLAR94001
Abstract: SLTNNB13122N SLTN
Text: DATE OF ISSUE : 2008. 06. 17. SPECIFICATION MODEL : SLTNNB13122N [Approved Rank : VF S , λD(M1, M2, M3), IV(F1, F2, F3, F4)] BLUE TOP VIEW CUSTOMER : SAMSUNG ELECTRO-MECHANICS DRAWN CHECKED APPROVED Preliminary CUSTOMER : DRAWN CHECKED APPROVED SAMSUNG ELECTRO-MECHANICS CO,.LTD.
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SLTNNB13122N
TNNB13122N)
SLTNNB13122N)
GLAR94001
SLTNNB13122N
SLTN
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photomultiplier
Abstract: DY10 E678-12A R1705 hamamatsu PMT R-1705 E678-12
Text: PHOTOMULTIPLIER TUBE R1705 Ruggedized, High Temperature 175°C PMT (for Oil Well Logging) 38mm (1-1/2 Inch) Diameter, 10-Stage, Head-on Type GENERAL Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Useful Diameter
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R1705
10-Stage,
E678-12A
S-164-40
TPMH1221E01
photomultiplier
DY10
E678-12A
R1705
hamamatsu PMT
R-1705
E678-12
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Untitled
Abstract: No abstract text available
Text: ISSUE NO : Rev: DATE OF ISSUE : 2007. 07. 11 SPECIFICATION MODEL : SLSNNWH802TS [Approved Rank : VF S , λD(S, L), IV(D1, D2, D3, D4)] WHITE TOP VIEW CUSTOMER : Preliminary SAMSUNG ELECTRO-MECHANICS CO,.LTD. 314. MAETAN3-DONG, YEONGTONG-KU, SUWON-SI,GYUNGKI-DO,KOREA,442-743
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SLSNNWH802TS
24hours
Baking65
524Bake
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Untitled
Abstract: No abstract text available
Text: DATE OF ISSUE : 2008. 06. 17. SPECIFICATION MODEL : SLTNCW13122N [Approved Rank : VF S , λD(S, L), IV(D1, D2, D3, D4)] WHITE TOP VIEW CUSTOMER : SAMSUNG ELECTRO-MECHANICS DRAWN CHECKED APPROVED Preliminary CUSTOMER : DRAWN CHECKED APPROVED SAMSUNG ELECTRO-MECHANICS CO,.LTD.
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SLTNCW13122N
SLTNCW13122N
SLTNCW13122N)
TNCW13122N)
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MN638S
Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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infringement0718
H1-C01EC0-0110015TA
MN638S
STA464C
sk 3001s
relay Re 04501
spf0001
sta509a
Schottky Diode 80V 6A
2SD2633
sk 5151s
SLA2403M
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R6233
Abstract: R6231 R6233-01 R6231-01 59510 R6232-01 R6234-01 R6235-01 R6236-01 R6237-01
Text: PHOTOMULTIPLIER TUBES FOR GAMMA CAMERA For Gamma Camera and Scintillation Counting, Low Profile, High P. H. R. Type. No. R6231-01 51mm Dia. R6232-01 (60mm Dia.) R6233-01 (76mm Dia.) R6234-01 (60mm Hex.) R6235-01 (76mm Hex.) R6236-01 (60mm Squ.) R6237-01
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R6231-01
R6232-01
R6233-01
R6234-01
R6235-01
R6236-01
R6237-01
SE-171-41
TPMH1133E02
R6233
R6231
R6233-01
R6231-01
59510
R6232-01
R6234-01
R6235-01
R6236-01
R6237-01
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC2859 TRANSISTOR NPN SOT–23 FEATURES Excellent hFE Linearity Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-23
2SC2859
100mA
400mA
100mA,
25Min
40Min
70Min
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Vossloh-Schwabe luga c
Abstract: visio
Text: LED-Produktprogramm 2013 LED Product Range 2013 Raum schaffen für neue Ideen Kundenspezifische Projekte, LED-Module und LED-Treiber, OLEDs Cree XLamps , Nichia LEDs LED-Selektion, LED-Bearbeitung, Gegurtete LEDs LEDs und Displays LED-Konfektionierung Backlights
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Untitled
Abstract: No abstract text available
Text: DATA SHEET CITILED COB Series CLU024-1201B8 Introduction P 2 Performance Characteristics P 3 Mechanical Dimensions P 5 Characteristic Curves P 6 Reliability P 9 Packing Specification P 10 Precaution P 11 1 Ref.CE-P2698 06/14 R1 0714 Product Nomenclature CLU024 - 12 01 B8 - 27 3 M1 A2
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CLU024-1201B8
CE-P2698
CLU024
CLU024
2700K
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CLU044-1212B8
Abstract: No abstract text available
Text: DATA SHEET CITILED COB Series CLU044-1212B8 Introduction P 2 Performance Characteristics P 3 Mechanical Dimensions P 5 Characteristic Curves P 6 Reliability P 9 Packing Specification P 10 Precaution P 11 1 Ref.CE-P2705 06/14 R1 0714 Product Nomenclature CLU044 - 12 12 B8 - 27 3 M1 A2
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CLU044-1212B8
CE-P2705
CLU044
CLU044
2700K
CLU044-1212B8
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Untitled
Abstract: No abstract text available
Text: I 8 I File No. I I I • -Stake In 4Places Equally Spaced 9 0 ' A Part ft? I ISHEET 410 q : 1/1 fO \ Recom m ended Soldering Pads \ / > 1.1 SQ X4 Notes Rnish Plating Thickness In Micro— Inches 1 .Brass Per QQ— B — 6 26 2.Gold PI 3Min Over Nickel PI 70Min Thick
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OCR Scan
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PDF
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70Min
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC2859 A U D IO FREQUENCY LO W PO W ER AM PLIFIER APPLICATIONS. U n it in m m DRIVER STAGE AM PLIFIER APPLICATIONS. + 0.5 - 0.3 + 0.25 . 1.5 - 0.15 SW ITCH IN G APPLICATIONS. • • 25 Excellent hpE Linearity : hFE 2 = 25(Min.) (V qe = 6V, Ic = 400mA)
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2SC2859
400mA)
2SA1182.
100mA
400mA
100mA,
25Min.
40Min.
70Min.
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