7105 FET Search Results

Led driver 100W schematic

Abstract: KNB1560 cp5 94v-0 power supply driver led 100w schematic 100w amp schematic diagram schematic diagram 100w amp IRF22N60K CP5 94V0 TEA1507 ir1166
Contextual Info: User Guide 1.0 IRAC11662-100W +16V Low-side Smart Rectification 100W Flyback Demo Board User’s Guide by HELEN DING, ISRAEL SERRANO 19 April 2010 Rev.1A 19 April 2010 UG #1.0 Page 1 of 24 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: 310 252-7105

IRAC1166-100W

Abstract: KNB1560 cp5 94v-0 tdk ferrite PQ3535 CP5 94V0 hughes TERMINAL 200-203 PQ3535 PC44 smd diode f4 4d t3.15A/250V IRF22N60K
Contextual Info: 10 Ang Mo Kio Street 65, #03-18 TechPoint, Singapore 569059 Reference Design # 0618 IRAC1166-100W +16V Low-side Smart Rectification 100W Flyback Demo Board User’s Guide by ISRAEL SERRANO 18 August 2006 Rev.1A 18 August 2006 RD#0618 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: 310 252-7105

KNB1560

Abstract: IRF22N60K cp5 94v-0 4N7 CAPACITOR 1000V CP5 94V0 IRF22N60 hughes 200-203
Contextual Info: User Guide 1.0 IRAC11662-100W 123456789ABCD5EF5DBBB75 5255DF757C55 AD!A5"#BCD5 by HELEN DING, ISRAEL SERRANO 19 April 2010 Rev.1A 19 April 2010 UG #1.0 Page 1 of 24 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: 310 252-7105

SD214

Abstract: 2N7106 2N7104 2N7105 2N7107 2N7108 2N7109 SD210CHP SD211CHP 2M7105
Contextual Info: TOPAZ S E M I C O N D U C T O R DSE Wimmm D | ^OöSaEt, D D O G ^ Ô Ô _ T '- S | ir , ’ ' 2 ^ 2N7104, 2W7105, 2N7106 SEMICONDUCTOR ^ 7 1 0 7 ; 2 N7 1 0 8 , 2 N7 1 0 9 N-CHANNEl ENHANCEMENT-MODE D-M S FET SWITCHES ORDERING INFORMATION

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

Contextual Info: Application Note AN-1053 Power-up Sequencing Techniques Using iP1201 & iP1202 by David Jauregui, International Rectifier Table of Contents Power-up Sequencing Approaches Page Sequential

power mosfet 100v 250w

Abstract: n-channel 250w power mosfet
Contextual Info: CONTROL IC THE POWER MANAGEMENT LEADER IR5001S Active ORing IC Makes Redundant Systems More Efficient IR ADVANTAGE • IC controller and driver in a single SO-8 package • Suitable for both input ORing and output ORing for redundant DC-DC and AC-DC power supplies

TP2504N8

Abstract: A773 A773* Transistor P024 TP2502 TP2502ND TP2504ND 43AA
Contextual Info: S u p e r te x in c TP2502 TP2504 . Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B V oss/ R d S<ON ^ G S ith ) B V dgs max) (m ax) -20V 2.0Q -2.4V -40V 2.0CÌ -2.4V W n) (min) Order Num ber / Package TO-243AA*

Contextual Info: TP2502 hm. tp 2504 I n w T h rftg h n lrB l Prelim inary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON ^GS(th) I d (ON) Order Number / Package BVdgs (max) (max) (min) TO-243AA* DICE+ -20V 2.0Q -2.4V -2.0A — TP2502ND

Contextual Info: TN2640 Supertex Inc. Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package R d S ON V GS(th) '□(ON) «C s (max) (max) (min) SO-8 TO-92 Diet 400V 5.0fi 2.0V 2.0A TN2640LG TN2640N3 TN2640ND M IL visual screening available.

TP2504N8

Abstract: TO-243AA P024 TP2502 TP2502ND TP2504ND
Contextual Info: TP2502/TP2504 TP2502 TP2504 Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* DICE† -20V 2.0Ω -2.4V -2.0A — TP2502ND -40V

TN2640

Abstract: TN2640LG TN2640N3 TN2640ND
Contextual Info: TN2640 Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† 400V 5.0Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640ND MIL visual screening available.

TN2640

Abstract: TN2640LG TN2640N3 TN2640ND
Contextual Info: TN2640 Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† 400V 5.0Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640ND MIL visual screening available.

Contextual Info: TN2640 Supertex inc. Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) I d (ON) b v dgs (max) (max) (min) SO-8 TO-92 Diet 400V 5.0Q. 2.0V 2.0A TN 2640LG T N 2640N 3

10mhz mosfet

Abstract: IRF7534D1 3A 300V Schottky Diode
Contextual Info: PD -93864 IRF7534D1 FETKY MOSFET & Schottky Diode HEXFET Co-packaged power MOSFET and Schottky diode ● Ultra Low On-Resistance MOSFET ● Trench technology TM Footprint ● Micro8 ● Available in Tape & Reel Description ● 1 8 K A 2 7 K S 3 6 D G 4 5

Diode SY 356

Abstract: SY 356 sy356 34992 diode sy 345 C6042 Lautsprecher LP SY360 sy 360 stassfurt
Contextual Info: SERVICE-M ITTEILUNGEN V E B IN O U S T R tE V E R T R IE B R U N D F U N K U N D F E R N S E H E N r a d i o -television AUSGABE: Seite 1986 1-4 Mitteilung aus den VEB Fernsehgerätewerk Staßfurt 1. Ablösung der sowjetischen Ge-Diode D 7 D in den Geräten

SD08H0SK

Abstract: isotek 1812 Isotek SMT-R000 keystone 1028 10MQ040N 6TPB470M AN-1028 AN-1029 AN-1030 capacitor smt 10uf 25v
Contextual Info: REFERENCE DESIGN International Rectifier IRDCiP1001-B • 233 Kansas Street, El Segundo, CA 90245 USA IRDCiP1001-B, 200kHz to 300kHz, 20A, 5VIN to 12VIN Single Phase Synchronous Buck Converter using iP1001 Overview In this document, Table 1 and Figure 1 are provided to enable engineers to

C4532X5R0J107MT

Abstract: 100uf 16v murata tantalum resistor 91k 470uf 16V tantalum 50V 100uf isotek 1812 keystone 1028 10MQ040N CR43-220 AN-1028
Contextual Info: REFERENCE DESIGN International Rectifier IRDCiP1001-A • 233 Kansas Street, El Segundo, CA 90245 USA IRDCiP1001-A, 200kHz, 20A, 3.3VIN to 4.5VIN Single Phase Synchronous Buck Converter using iP1001 Overview In this document, Table 1 and Figure 1 are provided to enable engineers to

NT7506

Abstract: NT7506H-BDT 5mm rainbow led 128128 NT75 128128-a BTHQ 128
Contextual Info: Specification BTHQ 128128AJA-FETF-06-LEDWHITE-COG-TP_ NT Doc. No.: MSGF9622-07 Version June 2008 Data Modul AG - www.data-modul.com REVISION HISTORY: Revision 1.0 Date 14-Jun.-2008 Description Written By Approved By New Release (Modified from MSGF9622-06 by changing IC to

C G 774 6-1

Abstract: M68000 MC68020 MC68030 MC68851 MC68881 MC68882 pipeline synchronization 961963 MOTOROLA 934
Contextual Info: INDEX A Abort Task Routine 9-82 Absolute Long Address Mode 2-20 Absolute Short Address Mode 2-20 Access Time Calculations, Memory 12-14 Accesses, Read-Modify-Write 6-10 Acknowledge, Breakpoint 8-10 Activity Data Bus 12-11 Processor Even Alignment 11-9 Odd Alignment 11-10

AT91SAM3U4E

Abstract: SAM3U SUPC_SR Atmel SAM-ICE AT91SAM3U4 SAM3u ADC12B atmel Lot Code Identification atmel 1232 Atmel MARKING CODE
Contextual Info: Errata on SAM3U Engineering Sample Devices 1. Scope This document describes the known errata found on the SAM3U series engineering samples. 1.1 Marking All devices are marked with the Atmel logo and the ordering code. Additional marking is as follows: YYWW

ADC12B

Abstract: atmel 1224 AT91SAM3U4C AT91SAM3U4 SAM3u AT91SAM3U4E Atmel MARKING CODE AT91SAM3U1C ATMEL 1212 AT91SAM3U2E
Contextual Info: Errata on SAM3U Engineering Sample Devices 1. Scope This document describes the known errata found on the SAM3U series engineering samples. 1.1 Marking All devices are marked with the Atmel logo and the ordering code. Additional marking is as follows: YYWW

FDP039N08B

Abstract: fdp039 547 MOSFET
Contextual Info: FDP039N08B_F102 N-Channel PowerTrench MOSFET 80V, 171A, 3.9mW Features Description • RDS on = 3.16mW ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

547 MOSFET

Contextual Info: FDP039N08B_F102 N-Channel PowerTrench MOSFET 80 V, 171 A, 3.9 mΩ Features Description • RDS on = 3.16 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low Reverse Recovery Charge, Qrr = 87.9 nC This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has