TN2640ND Search Results

Contextual Info: TN2640 Supertex Inc. Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package R d S ON V GS(th) '□(ON) «C s (max) (max) (min) SO-8 TO-92 Diet 400V 5.0fi 2.0V 2.0A TN2640LG TN2640N3 TN2640ND M IL visual screening available.

Contextual Info: TN2640 TN2640 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 DPAK Die† 400V 5.0Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640K4 TN2640ND

TN2640

Abstract: TN2640K4 TN2640LG TN2640N3 TN2640ND
Contextual Info: TN2640 TN2640 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 DPAK Die† 400V 5.0Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640K4 TN2640ND

Contextual Info: TN2640 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† 400V 5.0Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640ND MIL visual screening available.

TN2640

Abstract: TN2640LG TN2640N3 TN2640ND
Contextual Info: TN2640 Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† 400V 5.0Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640ND MIL visual screening available.

TN2640

Abstract: TN2640LG TN2640N3 TN2640ND
Contextual Info: TN2640 Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† 400V 5.0Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640ND MIL visual screening available.

50 n 02406 p

Abstract: MS-012AA TN2640 TN2640K4 TN2640LG TN2640N3 TN2640ND
Contextual Info: TN2640 TN2640 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 DPAK Die† 400V 5.0Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640K4 TN2640ND

Contextual Info: TN2640 Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† 400V 5.0Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640ND MIL visual screening available.

B0728

Abstract: 125OC TN2640 TN2640ND sitn 620
Contextual Info: TN2640 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: TN2635 TN2640 tìfk Super te x inc. Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV dss/ Order Number / Package R DS ON VGS(th) ' d (ON) (max) (m ax) (miri) SO-8 TO-92 DICE* 350V 5.0Q 2.0V 2.0A - TN2635N3 TN2635ND

N2640

Contextual Info: TN2640 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

125OC

Abstract: TN2640 TN2640ND N2640 TO92 220
Contextual Info: TN2640 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

TN2635N3

Contextual Info: TN26D inc. Ti ü t j h i i ü i d Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVD3S/ R d S ON V OS(th) ' d (ON) BVpos (max) (max) (min) TO-92 DICE* 350V 5.0Q 2.0V 2.0A TN2635N3 TN2635ND 400V 5.0Q 2.0V

diode 400V 4A

Abstract: TN2635 TN2635N3 TN2635ND TN2640 TN2640LG TN2640N3 TN2640ND
Contextual Info: TN2635/TN2640 TN2635 TN2640 Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) 350V 5.0Ω 2.0V 400V 5.0Ω 2.0V Order Number / Package SO-8 TO-92 DICE†

Contextual Info: TN2635 TN2640 Low Threshold Prelim inary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ Order Number / Package ^GS th I d (ON) BVdgs (max) (max) (min) SO-8 TO-92 DICE+ 350V 5.0Q 2.0V 2.0A - TN2635N3 TN2635ND 400V 5.0Q 2.0V 2.0A

Contextual Info: TN2640 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

SW7 357

Abstract: HV803 ausi die attach CSI 2702 HV208 HV82 38495 VF01 VP03 AF03
Contextual Info: Chapter 19 – Die Specifications DMOS Die Specifications Selector Guide VF01/VF06/VF21/VF25 VF22/LND1/LP07 VF05/VF13/VF26/TN07 VF32/LNE1/LP08 AF03 LR6 LR7 HT04 HV15/HV16/HV18 HV202 HV204/HV217/HV218/HV227/HV228 HV207 HV208 HV209 HV21/HV22 HV31/49 HV34 HV45/HV46