7110 Search Results

TR0 TF0

Abstract: LTD222R-12 Philips 3.5 digit 7 segment lcd display Philips 7 digit 7 segment lcd display 3565 LTD222
Contextual Info: PHILIPS INTERNATIONAL bOE J> 7110 6Bh 0057045 Philips Components status Product specification date of issue July 1990 ip h in LTD222 Data sheet la o Liquid crystal display QUICK REFERENCE DATA Viewing area dimensions DEVICE DESCRIPTION The LTD222 is a 3 1/2-digit, 7-segment, multi-function

Contextual Info: BDT65F; BDT65AF BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbE 7110flSb 00435^0 4Sci M P H I N T ~ 33 SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.

IEC134

Abstract: LTD225R-11 panel-meter 11 pin 7 segment display
Contextual Info: PHILIPS INTERNATIONAL bOE D 7110Ö2L D 0 S7 Q4 Ô t.5«ì Philips Components 35 LTD225 Data sheet status Product specification date of issue July 1990 IPHIN Liquid crystal display DEVICE DESCRIPTION The LTD225 is a 3 1/2-digit, 7-segment multi-function display. It is intended for use in multimeters and panel

1000 v fast recovery rectifier diodes

Abstract: M057 BYD34D BYD34G BYD34J BYD34K BYD34M Philips FA 564
Contextual Info: 5bE D m 711002b □DM0575 T22 H P H I N Maintenance type - not for new designs pnmps Avalanche fast soft-recovery rectifier diodes PHILIPS INTERNATIONAL DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID

P112

Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
Contextual Info: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are

TDA8709

Abstract: IEC134 S028 TDA8709T fdk id
Contextual Info: Philips Semiconductors Product specification T -1 7 -0 7 -1 3 Video analog input interface TDA8709 PHILIPS INTERNATIONAL SbE D 7110fi2b 0 0 3 7 C H 3 FEATURES APPLICATIONS • 8-bit resolution • Video signal processing • Sampling rate up to 30 MHz • Digital picture processing

philips bfq

Abstract: BFQ263 BFQ263A RK 100
Contextual Info: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with

AB marking code diode

Abstract: BFR101B BFR101A
Contextual Info: 7110fl£b G O b T l b M 435 • P H I N BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S ym m etrical n-channel silicon ju n c tio n fie ld -e ffe c t tran sisto r, designed p rim a rily fo r use as a source fo llo w e r w ith the in p u t protected against successive voltage surges by a fo rw a rd and reverse integrated

BT153

Abstract: TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062
Contextual Info: PHILIPS INTERNATIONAL SflE J> 7110fl2t, 0053035 301 • PHIN B l iby _y F A S T TURN-OFF TH YR IS TO R Glass-passivated fast-turn-off thyristor in a T 0 -2 2 0 A B envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable for use in regulator,

as6 diode

Abstract: BYX96-300 diode as6 BYX96 BYX96-300R BYX96-300U
Contextual Info: BYX96 SERIES PHILIPS INTERNATIONAL SbE D • 7110ÔEb OD41bSS 1T3 ■ PHIN T ~ 0 - n RECTIFIER DIODES A ls o availab le to B S 9 3 3 1 - F 1 2 9 S ilic o n re ctifie r dio d es in m etal envelopes sim ila r to D O -4 , intended fo r use in p o w er rectifier

MCD288

Abstract: The Diode with Package Outlines 1993 SOT96A 1545A pulse to sinewave convertor DDSS431 TDA1545A TDA1545AT
Contextual Info: PHILIPS INTERNATIONAL bOE D • 7110fl2b D O S S ^ S 51b « P H I N 'T ' Philips Preliminary specification Stereo continuous calibration DAC TDA1545A FEATURES GENERAL DESCRIPTION • Space saving package S08 or DIL8

Diagram IC Lm 2476

Abstract: 4 digit 7 segment lcd display pin configuration 3.5 digits lcd display 4.5 digit lcd 4-digit counter philips e3 DDS7315 PCF1179C PCF1179CT PCF1179CU
Contextual Info: PHILIPS INTERNATIONAL b4E » • 711032^ 0057300 7^5 « P H I N P hilip s Sem P roduct specification 4-digit duplex LCD car clock PCF1179C FEATURES GENERAL DESCRIPTION • Internal voltage regulator is electrically programmable

BD201F

Abstract: BDX77F BD203F BD202F BD204F BDX78F
Contextual Info: J PHILIPS INTERNATIONAL SbE D • BD201F; BD203F; BDX77F 7110a2b 0Gl+2ÛDfi Ô4S ■ PHIN T - 3 3 ' O cf SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .

BUK10B-50US

Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106
Contextual Info: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic

ltd133

Abstract: 7 segments display philips LTD133F-21 12 pin 7 segment clock Liquid Crystal 12 pin 4 digit 7 segment display
Contextual Info: PHILIPS INTERNATIONAL Data sheet status Product specification date of issue July 1990 . bOE 7110flSb 0 D 5 7 0 2 5 7' 4 LTD133 Ü51 IPHIN /S t Liquid crystal display DEVICE DESCRIPTION The LTD133 is a 3 1/2-digit 7 segment clock display with AM and PM functions. It is designed for use with the

BUK426-100B

Abstract: transistor BU 110 BUK426-100A
Contextual Info: Philips Components Data sheet status Product specification date of issue March 1991 PHILIPS 7 - 3 ^ -/ / B U K 4 2 6 - 1OOA/B PowerMOS transistor 5bE T> INTERNATIONAL 7110fl2t 0044120 flSD I_ I GENERAL DESCRIPTION N-channel enhancement mode

SOT123 Package

Abstract: SOT123 BLF244 International Power Sources SOT-123
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability

NDS 40-20

Abstract: BUK437-500B DIODE BB2
Contextual Info: PHILIPS INTERNATIONAL fc.5E D m 7110flSb □□t.3c121 RS3 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

2222-809-05002

Abstract: philips e3 Philips Electrolytic Capacitor 16v BLU60-12 B6PN
Contextual Info: PHILIPS INTERNAT IO NAL bSE D E3 7110ÖSb DDLE7S1 =131 BLU60/12 l U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile.

fet junction n-channel transistor

Abstract: small signal audio FET 2N4340 N-Channel JFET transistor J-FET philips jfet transistor 2N4340
Contextual Info: 711002b DDbôO?! ÔT7 • P H IN Philips Semiconductors D ata sh e e t s ta tu s Prelim inary specification d a te of is s u e O ctob e r 1990 FEATURES • Low noise, noise figure < 1 dB • High o ff isolation. 2N4340 N-channel J-FET PINNING - TO-18 PIN 1

fet MARKING MHp

Abstract: sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S
Contextual Info: BF996S PHILIPS INTERNATIONAL 5 bE D 711002b D 0 3 l+D7û ÖTß • PHIN F O R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE OF H A N D B O O K SC07 O R D A T A S H E E T T - 35-27 SILICON N-CHANNEL DUAL GATE MOS-FET D e pletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and

25CC

Abstract: AM2952 MB2052 MB2052B
Contextual Info: T -5 2 ~ 3 -£ S Philips Semiconductors Advanced BiCMOS Products Objective specification Dual octal registered transceiver 3-State PHILIPS INTERNATIONAL FEATURES • StE D • 7110fl2fc. □03clclll 7S3 H P H I N QUICK REFERENCE DATA CONDITIONS T«ni> = 25CC; GND = 0V

hFE-200 to-92 npn

Abstract: 2N4123 2N4124 2N4125 2N4126
Contextual Info: 2N4123 _ 9N4194_ PHILIPS INTERNATIONAL SbE D • 711002b D042bb2 T3T ■ PHIN -= I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in pla stic T O -9 2 envelopes, p rim a rily intended fo r low -pow er, sm all-signal a u d io ­ fre qu e n cy a p p lica tio n s fo r consum er service.

4E7 philips

Abstract: KY 711 VN2406L FL 210 transistor
Contextual Info: • Philips 711002b DDbflOSS T4S ■ PHIN Sem iconductors Data sheet status Product specification date of issue July 1993 FEATURES VN2406L N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION PINNING - TO -92 variant • Very low RDs 0n