Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BDT65F Search Results

    BDT65F Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDT65F Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT65F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT65F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT65F Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF

    BDT65F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDT65AF

    Abstract: Audio Output Transistor Amplifier BDT65A BDT65BF npn DARLINGTON 10A BDT65CF BDT65F BDT65C NPN high power transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000 Min @ IC= 5A ·Complement to Type BDT64F/AF/BF/CF APPLICATIONS ·Designed for audio output stages and general purpose


    Original     		PDF BDT64F/AF/BF/CF BDT65F BDT65BF BDT65AF BDT65CF BDT65AF Audio Output Transistor Amplifier BDT65A BDT65BF npn DARLINGTON 10A BDT65CF BDT65F BDT65C NPN high power transistor

    Untitled

    Abstract: No abstract text available
    Text: BDT65F; BDT65AF BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbE 7110flSb 00435^0 4Sci M P H I N T ~ 33 SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT65F; BDT65AF BDT65BF; BDT65CF 7110flSb BDT65F

    BOT65C

    Abstract: 65AF BDT64AF BDT64BF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF BDT65F
    Text: BDT65F; BDT65AF bDT65BF; BDT65CF J SILICON DARLINGTON POWER TRANSISTORS NPIM silicon darlington power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. The devices are designed fo r audio o u tp u t stages and general am plifier and switching applications.


    OCR Scan     		PDF BDT65F; BDT65AF BDT65BF; BDT65CF BDT64F, BDT64AF, BDT64BF BDT64CF. BDT65F OT186. BOT65C 65AF BDT64AF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF

    BDT65CF

    Abstract: BDT65AF 65AF BDT64AF BDT64BF BDT64CF BDT64F BDT65BF BDT65F BDT65C
    Text: BDT65F; BDT65AF ^^BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbìT] I 7110ä 2b 00432^0 M S ’ì I I P H I N T - 3 3 ~z°l SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting


    OCR Scan     		PDF BDT65F; BDT65AF BDT65BF; BDT65CF aSOT186 BDT64F, BDT64AF, BDT64BF BDT64CF. BDT65F BDT65CF BDT65AF 65AF BDT64AF BDT64CF BDT64F BDT65BF BDT65C

    Untitled

    Abstract: No abstract text available
    Text: J BDT65F; BDT65AF ^BDT65BF; BDT65CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT65F; BDT65AF BDT65BF; BDT65CF OT186 BDT64F, BDT64AF, BDT64BF BDT64CF. bbS3T31

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BDT64C

    Abstract: BOT64 BOT64B
    Text: BDT64F; BDT64AF BDT64BF; BDT64CF PHILIPS INTERNATIONAL SbE D • VllDflEb 0043202 OTl ■ P H I N SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a SOT186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT64F; BDT64AF BDT64BF; BDT64CF OT186 BDT65F, BDT65AF, BDT65BF BDT65CF. BDT64F BDT64C BOT64 BOT64B

    bot64

    Abstract: No abstract text available
    Text: BDT64F; BDT64AF BDT64BF; BDT64CF J SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a S 0 T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT64F; BDT64AF BDT64BF; BDT64CF BDT65F, BDT65AF, BDT65CF. BDT64F 003473b bot64

    BDT64AF

    Abstract: bdt64cr KIA 574 BDT64BF BDT64CF BDT64F BDT65AF BDT65CF BDT65F
    Text: BDT64F; BDT64AF J BPT64BF; BDT64CF SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a S0T186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT64F; BDT64AF BDT64BF; BDT64CF OT186 BDT65F, BDT65AF, BDT658F BDT65CF. BDT64F BDT64AF bdt64cr KIA 574 BDT64BF BDT64CF BDT65AF BDT65CF BDT65F

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    bot64

    Abstract: BDT64A BDT64AF BDT64BF BDT64C BDT64CF BDT64F
    Text: BDT64F BDT6 11BDT64BF BDT6 Silicon Darlington power transistors Fig. 5 Safe Operating Area; = 25 °C . I Region of permissible DC operation. (II) Permissible extension for repetitive pulse operation. (1) Ptot max anc* Ppeak max lines. (2) Second-breakdown limits.


    OCR Scan     		PDF BDT64F BDT64A BDT64BF BDT64C 7Z21455 bot64 BDT64A BDT64AF BDT64C BDT64CF