7110FL2 Search Results

BT153

Abstract: TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062
Contextual Info: PHILIPS INTERNATIONAL SflE J> 7110fl2t, 0053035 301 • PHIN B l iby _y F A S T TURN-OFF TH YR IS TO R Glass-passivated fast-turn-off thyristor in a T 0 -2 2 0 A B envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable for use in regulator,

MCD288

Abstract: The Diode with Package Outlines 1993 SOT96A 1545A pulse to sinewave convertor DDSS431 TDA1545A TDA1545AT
Contextual Info: PHILIPS INTERNATIONAL bOE D • 7110fl2b D O S S ^ S 51b « P H I N 'T ' Philips Preliminary specification Stereo continuous calibration DAC TDA1545A FEATURES GENERAL DESCRIPTION • Space saving package S08 or DIL8

BUK10B-50US

Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106
Contextual Info: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic

BUK426-100B

Abstract: transistor BU 110 BUK426-100A
Contextual Info: Philips Components Data sheet status Product specification date of issue March 1991 PHILIPS 7 - 3 ^ -/ / B U K 4 2 6 - 1OOA/B PowerMOS transistor 5bE T> INTERNATIONAL 7110fl2t 0044120 flSD I_ I GENERAL DESCRIPTION N-channel enhancement mode

25CC

Abstract: AM2952 MB2052 MB2052B
Contextual Info: T -5 2 ~ 3 -£ S Philips Semiconductors Advanced BiCMOS Products Objective specification Dual octal registered transceiver 3-State PHILIPS INTERNATIONAL FEATURES • StE D • 7110fl2fc. □03clclll 7S3 H P H I N QUICK REFERENCE DATA CONDITIONS T«ni> = 25CC; GND = 0V

7FLU

Abstract: pin configuration of i3 processor FM SOUND PROCESSOR TDA3857 IEC134 TDA3856 TDA3858 SAW-Filter
Contextual Info: INTEGRATED CIRCUITS S K l i i T TDA3857 Quasi-split sound processor with two FM demodulators Product specification Supersedes data of October 1990 File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS PHILIPS V j? 7110fl2b D07fl00S T27 •

vexta

Abstract: TI TV multi band tuner IC Divider QFP44 SDIP42 TDA8742 TDA8742H 0.1 mKF capacitor
Contextual Info: INTEGRATED CIRCUITS & S M U T TDA8742; TDA8742H Satellite sound circuit with noise reduction Product specification Supersedes data of November 1992 File under Integrated Circuits, IC02 October 1994 Philips Semiconductors PHILIPS PHILIPS 7110fl2fc. 0 0 7 6 1 3 4

BUK452-100B

Abstract: BUK452-100A T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

RZ2731B60W

Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw
Contextual Info: • 3 3 - 1 3 RZ2731B60W PHILIPS INTERNATIONAL SbE D 7110fl2ti 004Li57ö OflS M P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 2.7 to 3.1 GHz.

MX0912B250Y

Abstract: 33-AS IEC134 015 capacitor philips
Contextual Info: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high

TRANSISTOR BO 344

Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

SOT227B package

Abstract: mb 428 mb 428 ic data ESM4045A ESM4045D SOT227A 4045D
Contextual Info: PHILIPS INTERNATIONAL 45E ]> 7110fl2ti 0031233 T M P HIN ESM4045A V ESM4045D(V) T '- 3 3 - d Q SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).

OM976

Abstract: 0071547 philips hybrid OM976
Contextual Info: 7110fl2b 0 0 7 1 S 4 3 Philips Semiconductors TDM M P H I N Preliminary specification Video output amplifier FEATURES OM976/1 PINNING • DC coupled video amplifier for cathode drive, with a positive-going video input. 1 input • Low internal thermal resistance

LTD101R-11

Abstract: dgs70 G-324
Contextual Info: PHILIPS INTERNATIONAL . bDE D • 7110fl2b 0057018 « m mPHIN Philips C o m p o n en ts Data sheet status Product specification date of issue July 1990 LTD101 Liquid crystal display DEVICE DESCRIPTION The LTD101 is a 3 1/2-digit 7 segment clock display with

philips blx15

Abstract: BLX15 Philips Application BLX15 TRANSISTOR blx15 Blx15 philips 4312 020 36640 blx15 push pull PHILIPS 4312 amplifier carbon resistor CIL TRANSISTOR 188
Contextual Info: PHI L IP S INTERNATIONAL bSE D m 7110fl2ki ODb3471 R74 BLX15 PHIN _ _ _ _ _ _ _ _ _ A_ _ _ _ _ _ _ H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:

BC331

Abstract: BC331 transistor transistor BC331 BC337 bc337-40 npn transistor BC337A BC337-26 TRANSISTOR BC338 BC327 BC327A
Contextual Info: BC337 BC337A BC338 1 PHILIPS INTERNATIONAL SbE D • 7110fl2b OOMllflfl DTX H I P H I N - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.

BFQ291

Abstract: BFQ290
Contextual Info: Philips Semiconductors Preliminary specification NPN HDTV video transistor PHILIPS INTERNATIONAL FEATURES • BFQ291 5bE D 7110fl2Li 0 D4 5b 7 4 423 H P H I N PINNING PIN High breakdown voltages DESCRIPTION • Low output capacitance 1 collector • 2 High gain bandwidth product

diode t62

Contextual Info: BDT62;-62A BDT62B; 62C J PHILIPS INTERNATIONAL SbE ]> • 7110fl2b 0043S3Ö TÔ4 M P H I N T - 3 3 - 3 / SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general am plifier and switching applications. T 0 -2 2 0 plastic envelope. N-P-N complements are B D T63,

D 1991 AR

Abstract: BD945
Contextual Info: BD943 BD945 BD947 _ HILIPS INTERNATIONAL SbE ]> H 7110fl2ti 0043070 SOfl PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

Contextual Info: PHILIPS INTERNATIONAL SflE D • 7110fl2b GGS30Sfl TOT « P H I N _ BTR59 S E R IE S FAST GATE TURN-OFF THYRISTORS T h y risto rs in S O T -9 3 envelopes w hich are capable of being turned both on and o ff via the gate, and

Contextual Info: BD202F; BD204F BDX78F PHILIPS in t e r n a t io n a l SbE ]> • 7110fl2t 0042fl5b flbO M P H I N T-33-17 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors in SOT186 envelopes with an electrically insulated mounting base. NPN complements are BD201F, BD203F and BDX77F respectively.

946f

Contextual Info: BD944F;946F BD948F PHILIPS INTERNATIONAL SbE » • 7110fl2b 00430^5 17T ■ P H I N r - 7 ? - ' / cr SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F.

BGY888

Abstract: DIN45004B SC16
Contextual Info: D IS C R E T E S E M IC O N D U C T O R S BGY888 CATV amplifier module Preliminary specification File under Discrete Semiconductors, SC16 December 1994 i• Philips Semiconductors PHILIPS P H ILIP S 7110fl2b 0007034 I 83^ This Material Copyrighted By Its Respective Manufacturer

tbf 494

Abstract: OA85 OA95 PLCC28 TDA8776 TDA8776K
Contextual Info: INTEGRATED CIRCUITS TDA8776 10-bit, 500 MSPS digital-to-analog converter Preliminary specification File under Integrated Circuits, IC02 1995 Mar 28 Philips Semiconductors PHILIPS PH IL IP S •I 7110fl2L. 0 0 3 7 ^ 4 5 flSE ■ This Material Copyrighted By Its Respective Manufacturer