711DFLSH Search Results

Contextual Info: Prelim inary specification P h ilip s S e m icon du ctors -3 3 -S 7 PNP HDTV video transistor PHILIPS INTERNATIONAL SbE » 711DflSh D D M S b7 3 ST7 « P H I N PINNING FE A T U R E S DESCRIPTION PIN • High breakdown voltages 1 collector • High gain bandwidth product

BUK104-50L

Abstract: BUK104-50S BUK104-50US
Contextual Info: PHILIPS bSE INTERNATIONAL D • 711002b D 0 b 3 f l43 Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. APPLICATIONS General controller for driving

12MHz

Abstract: 80C31 instruction set 87C51 80C31 80C51 8XC51 SC87C51CYF40 SI 1020H SC80C31BCGA44 zt 751
Contextual Info: Philips Semiconductors Product specification CMOS single-chip 8-bit microcontrollers DESCRIPTION 80C31/80C51/87C51 PIN CONFIGURATIONS The Philips 80C31/80C51/87C51 is a high-performance microcontroller fabricated with Philips high-density CMOS technology. The CMOS 8XC51 is functionally compatible with the

"Angle Sensor"

Abstract: kmz 20 scale sensor obh 2390 philips hybrid
Contextual Info: Philips Semiconductors Objective specification Angle sensor hybrid KM110BH/2390 FEATURES • Linear angle measuring range >90° • Contactless, therefore wearfree • 5 V supply, ratiometric voltage output signal • Operating temperatures up to 125 °C • Sample kit with magnet available.

BUK454-600B

Abstract: BTA12-600B 10A
Contextual Info: PHILIPS INTERNATIONAL bSE D B9 711DfiEb OObHQbb 67D • P H ] Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

74ABT374

Abstract: 74ABT374D 74ABT374DB 74ABT374N 74ABT374PW 038J 74abt374 Philips
Contextual Info: ADVANCED BiCMOS PRODUCTS 74ABT374 Octal D-type flip-flop; positive-edge trigger 3-State Product specification Supercedes data of September 1 5 ,1 9 9 3 IC23 n th October 1 9 ,1 9 9 4 Philips Semiconductors PHILIPS 7110fl2b 007Tfllb TS7 PHILIPS Philips Semiconductors Advanced BiCMOS Products

CL04 12

Abstract: lr cm04 M4B7 TDA1547 CL01 CL03 CL04 QFP64 TDA1373H xo992
Contextual Info: Philips Semiconductors Objective specification General Digital Input GDIN TDA1373H FEATURES m ill • Four operating modes: - Sample Rate Conversion (SRC) mode - AD/DA mode - SLAVE-VCO mode - SLAVE-VCXO mode 1 1 1 1 1 1 ii i BITSTREAM CONVERSION Full digital sample rate conversion over a wide range of

LQFP32

Abstract: S028 UMA1000LT UMA1002 UMA1002H UMA1002T UMF1000T
Contextual Info: Philips Semiconductors Product specification Data processor for cellular radio DPROC2 UMA1002 FEATURES • Single chip solution to all the data handling and supervisory functions • Configuration to both AMPS and TACS • Additional JTACS option • l2C-bus serial control

BFQ195

Abstract: BFG197 MCD155 NPN power transistor spice MBC964 MBB266
Contextual Info: Philips Semiconductors Product specification BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor FEATURES PINNING • High power gain PIN • Low noise figure DESCRIPTION 4 BFG197 Fig. 1 Code: V5 • Gold metallization ensures excellent reliability.

Contextual Info: Philips Semiconductors Product specification CATV power doubler amplifier modules FEATURES BGD102; BGD104 PINNING - SOT115C • Excellent linearity PIN • High output level DESCRIPTION 1 input • Silicon nitride passivation 2 common • 3 common 5 +VB 7

resistor MR25 philips

Abstract: resistor MR25 philips MR25 MR25 resistor MR25 philips Metal film resistor MF led MR25 MR25 DGB27 transistor nf
Contextual Info: PHILIPS INTERNATIONAL bS E D □0LE713 711Dö2b 0 2 ö I IPHIN BLU20/12 U.H.F. POWER TRANSÌSTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile