715MW Search Results

BAP51-02

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • BAP51-02 General Purpose Pin Diodes 715mW Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • BAP51-02 General Purpose Pin Diodes 715mW Lead Free Finish/RoHS Compliant "P" Suffix designates

TDC1048J

Abstract: TDC1048J6C TDC1048J6 ADC-208MC CA3318C IR3K06 TDC1048B6C
Contextual Info: -217- • 8 t ' i hÌÈJlJJtgJSA- D 3 9 IR3K03A/04A • >-+ - 7" +25' C 20MSPS typ +5V + 1/2LSB +5V TDC1048B6C TRW TFS 20MSPS min ±0. n 0.1% +5,-5. 2V 130mA 75mA 80mA* 35,-220mA -158mA 150mW typ BIN CMOS 6. 4V 715mW BIN TTL,CMOS +5V 250mW typ BIN TTL,CMOS

6550B

Abstract: ADC-208MC CA3318C IR3K06 TDC1048B6C
Contextual Info: • 8 t ' i hÌÈJlJJtgJSA- D 3 æ g ^ —il JlH fi SASifé LIN AL I N ^ liSHöft * typ +5V 130mA 75mA 80mA* 35,-220mA -158mA 150mW typ BIN CMOS 6. 4V 715mW BIN TTL,CMOS +5V 250mW typ BIN TTL,CMOS 2.OVp-p 400mf typ BIN TTL,CMOS 2. OYp-p BIN,CBN ECL -2.0 V

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • BAP51-02 General Purpose Pin Diodes 715mW Lead Free Finish/RoHS Compliant "P" Suffix designates

TC5117800bnt-60

Abstract: TC5117800B
Contextual Info: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

TC514265DJ

Abstract: TC514265D TC514265 SOJ40-P-400
Contextual Info: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper­

tc5118180

Abstract: TC5118180AJ TC5118180A A495 A509 TC511818 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498
Contextual Info: TOSHIBA TC511818 QAJ/AFT-70/80 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5118180AJ/FT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5118180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit

Contextual Info: TPS799xx www.ti.com SBVS056I – JANUARY 2005 – REVISED NOVEMBER 2007 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES DESCRIPTION 1 • 200mA Low Dropout Regulator with EN • Low IQ: 40µA • Multiple Output Voltage Versions Available:

Contextual Info: TPS717xx www.ti.com. SBVS068G – FEBRUARY 2006 – REVISED APRIL 2009 Low Noise, High-Bandwidth PSRR Low-Dropout 150mA Linear Regulator

Contextual Info: TPS799xx www.ti.com SBVS056I – JANUARY 2005 – REVISED NOVEMBER 2007 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES DESCRIPTION 1 • 200mA Low Dropout Regulator with EN • Low IQ: 40µA • Multiple Output Voltage Versions Available:

Contextual Info: TPS734xx www.ti.com . SBVS089F – DECEMBER 2007 – REVISED FEBRUARY 2009 250mA, Low Quiescent Current, Ultra-Low Noise, High PSRR

Contextual Info: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: TOSHIBA ' m ^0^7240 0020 34 1 R7b • TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM DRAM Description Features Key Parameters 2,097,152 word by 8 bit organization Fast access time and cycle time Single power supply of 5V±10% with a built-in VBB generator

Contextual Info: PRELIM INARY- - October 1995 Edition 2.1 = FUJITSU PRODUCT PROFILE SHEET MB8 117805A-60/-70 CMOS 2M X 8BIT HYPER PAGE MODE DYNAMIC RAM CM O S 2,097,152x 8B IT Hyper Page Mode Dynam ic RAM The Fujitsu MB8117805A is a fully decoded CMOS Dynamic RAM DRAM that contains

Contextual Info: HM5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118165B offers Extended

mb8117400

Contextual Info: FUJITSU Sepi zeliti Edition 2.0 DATA SHEET MB8117400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessfcle in 4-bit increments. The MB8117400 features a ’ fast page’ mode of

24-Pin Plastic DIP

Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC diode Lz 66 transistor smd code wz P4C188 P4C188L
Contextual Info: P4C188/188L P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

Contextual Info: TPS734xx www.ti.com . SBVS089F – DECEMBER 2007 – REVISED FEBRUARY 2009 250mA, Low Quiescent Current, Ultra-Low Noise, High PSRR

NTE15023

Contextual Info: NTE15023 Integrated Circuit dbx TV Noise Reduction Integrated Circuit Description: The NTE15023 is an integrated circuit designed for the dbx–TV noise reduction decode circuit for multichannel TV sound systems. This device contains a voltage controlled amplifier, a variable de–emphasis circuit with new configuration and RMS detectors with completely integrated active band pass

Contextual Info: TPS799xx www.ti.com SBVS056F – JANUARY 2005 – REVISED FEBRUARY 2006 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES • • • • • • • • • • • DESCRIPTION 200mA Low Dropout Regulator with EN

Contextual Info: TPS799xx www.ti.com SBVS056E – JANUARY 2005 – REVISED OCTOBER 2005 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES APPLICATIONS • • • • • • • • • • • • • • • 200mA Low Dropout Regulator with EN

TPS799xxYZU

Contextual Info: TPS799xx www.ti.com SBVS056E – JANUARY 2005 – REVISED OCTOBER 2005 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES APPLICATIONS • • • • • • • • • • • • • • • 200mA Low Dropout Regulator with EN

Contextual Info: TPS799xx www.ti.com SBVS056E – JANUARY 2005 – REVISED OCTOBER 2005 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES APPLICATIONS • • • • • • • • • • • • • • • 200mA Low Dropout Regulator with EN