71982 Search Results

S498

Contextual Info: | dt Integrated DeviceTechnology, Inc CMOS STATIC RAMS 64K 16Kx 4-BIT) IDT 71981S/L IDT 71982S/L Separate Data Inputs and Outputs FEATURES: DESCRIPTION: • T h e ID T71981/ID T 71982are 65,536-blt h ig h -sp ee d static RAMs o rga n ized as 16K x 4. T h e y are fa b rica ted u sin g ID T’s highperform ance, h ig h -re lia b ility te c h n o lo g y -C E M O S . T h is state-ofthe-art te ch n o lo g y, c o m b in e d w ith innovative c irc u it desig n te ch ­

ATT7C162

Contextual Info: Data Sheet January 1992 = sA T & T Microelectronics ATT7C161 ATT7C162 High-Speed CMOS SRAM 64 Kbit 16K x 4 , Separate I/O Features • Plug-compatible with IDT71981/71982 and CY7C161/162 ■ High speed — 10 ns maximum access time ■ Low-power operation

cu2i

Abstract: S496 S498 IDT71981 S4-102 S4103 S0282
Contextual Info: 14E D INTEGRATED DEVICE ÉPN.'" ' Mdt IntegratedDevteeTedinokpgy.Inc. • 4Ô2S771 QQ033bl 1 C M O S S T A T IC RA M S 6 4 K 1 6 K x 4-BIT) Separate Data Inputs and Outputs FEATURES: IDT 71981S/L IDT 71982S/L T-4V5 -¿3 'IO DESCRIPTION: • Optimized for fast R IS C processors Including the

Contextual Info: Data Sheet March 1992 ATT7C161 ATT7C162 , =ATaT Microelectronics High-Speed CMOS SRAM 64 Kbit 16K x 4 , Separate I/O Features • Highspeed— 10 ns maximum access time ■ Plug-compatible with IDT71981/71982 and CY7C161/162 ■ Separate I/O and transparent write (ATT7C161) or

Contextual Info: 2014 Professional HEX Tools Inch & Metric Complete Hex Program Toll Free: 800 494-6104 2 Wiha Hex Tools Index Wiha Ball End Hex Tools Index DESCRIPTION Page Ball End L-keys & Sets 6 Colored Coded L-keys 5 Ball End L-keys & Sets 7-9 L-keys - Long/Short

Contextual Info: L7C162 16K x 4 Static RAM D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 16K x 4 Static RAM with Separate 1 /O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation

S8060

Contextual Info: Tape Information Vishay Siliconix MICRO FOOT 3 x 2: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT 4.00 ± 0.10 4.00 ± 0.10 + 0.10 Ø 1.50 - 0.00 A 2.00 ± 0.05 B B 1.75 ± 0.1 3.5 ± 0.05 0.30 8.0 +- 0.10 SECTION A-A A SECTION B-B Notes 1. 10-sprocket hole pitch cumulative tolerance ± 0.2.

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

2S701

Abstract: ATA 2388 IC ATA 2388 2L85 719b1
Contextual Info: CMOS STATIC RAMs 64K 16Kx 4-BIT IDT71981S/L 71982S/L Separate Data Inputs and Outputs Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • Separate data inputs and outputs IDT71981S/L: outputs track inputs during write mode

TAA 981

Abstract: IDT71982 71982
Contextual Info: CMOS STATIC RAMs 6 4 K 1 6 K x 4-BIT IDT71981S/L 71982S/L Separate Data Inputs and Outputs In te g rate d D e vic e Technology, In c . FEATURES: • • • • • • • • • • S eparate data inputs and outputs ID T71981S /L: ou tputs tra c k inputs during w rite mode

Contextual Info: L7C162 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Impedance Write The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and

CY7C161

Contextual Info: LOGIC DEVICES INC SbE D • SSbS'lOS 0 0 0 1 0 3 0 b ÊÊ _ 16KX 4 Static RAM L 7 C 1 6 1 /1 6 2 DESCRIPTION □ 16K x 4 Static RAM with Separate I/O , Transparent Write L7C161 , or High Impedance Write (L7C162) □ Auto-Powerdown Design □ Advanced CMOS Technology

Contextual Info: L7C161/162 16Kx 4 Static RAM DESCRIPTION FEATURES □ 16K x 4 Static RAM with Separate I/O , Transparent Write L7C161 , or I ligh Im pedance Write (L7C162) U A uto-Pow erdow n D esign □ A dvan ced CM O S Technology □ High Speed — to 8 ns m axim um

Contextual Info: L O G I C L 7 C 1 6 2 1 6 K x 4 Static RAM DEVICES INCORPORATED FEATURES ESCRIPTIQf □ 16K x 4 Static RAM with Separate I/O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation

Contextual Info: T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T - BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S RESERVED. C O R P O R A T IO N . 2.67 2.80 [.110] LA 0.76 [.0 30 ] 2.54 100 TYP [. [. 200 ] ] 9.14 [.3 60 ] 3 1

Contextual Info: L7C1R2 *- — • — - - L 7 C 1 G2 16K x 4 Static RAM JbVUI-S ■ : XJHHO -■AI h □ 16K x 4 Static RAM w ith Separate 1 / 0 and High Im pedance Write □ Auto-Powerdown Design □ A dvanced CMOS Technology □ H igh S p eed — to 12 n s m ax im u m

EIA-364-56A

Abstract: alco position switch ALCO1
Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . RELEASED FOR A LL P U B L IC A T IO N R IG H TS RESERVED. C O P Y R IG H T 2.67 D C LA 0.76 [.0 30 ] 2.54 100 TYP [. ] 9.14 [.3 60 ] 1 1 1 1 1 1 c c 1 1 c c ll 1 1 1 [. 200 ] 3 1 1 2 1 1 1 5.08 1 1 1 D 4 5

Elap 78

Contextual Info: L7C162 16K x 4 Static RA M DESCRIPTION □ 16K x 4 Static RAM w ith Separate I /O and H igh Im pedance W rite □ A uto-Pow erdow n Design □ A dvanced CMOS Technology □ High Speed — to 12 ns m axim um □ Low Pow er Operation Active: 325 m W typical at 25 ns

2S5570

Abstract: 2S8521
Contextual Info: INTEGRATED DEVICE BflE D • 4 fi2 5 7 7 1 □00Ö333 ? H ID T T CMOS STATIC RAMS 6 4 K 1 6 K x 4-BIT - IDT71981S/L 71982S/L Separate Data Inputs and Outputs Integrated Device Technology, Inc* FEATURES: • Optimized for fast RISC processors including the

2SA1179N6

Contextual Info: 2SA1179N/2SC2812N Ordering number : EN7198B SANYO Semiconductors DATA SHEET 2SA1179N/2SC2812N PNP / NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications Features • • Miniature package facilitates miniaturization in end products

CONTACTOR

Contextual Info: L7C162 1 6 K x 4 S t a t ic R A M FEATURES □ 16K x 4 Static RAM w ith Separate I/O and H igh Im pedance Write □ A uto-Powerdown Design □ A dvanced CMOS Technology □ High Speed — to 12 ns m aximum □ Low Pow er O peration Active: 325 mW typical at 25 ns

Contextual Info: L7C162 16K x 4 Static R A M FEATURES □ 16K x 4 Static RAM with Separate I/O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 [iW typical

Contextual Info: TIP32F; 32AF TIP32BF; 32CF TIP32DF y v SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SO T186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed