71B4142 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 71b4142 0Q151b4 54e! I KMM5362000B/BG SM6K DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tnAc tc A c tRC 60ns 15ns 110ns KM M 5362000B-7 70ns 20ns 130ns KMM5362000B-8 . 80ns

SOT-23 MARKING T31

Abstract: SOT23s KSR1111 KSR2111
Contextual Info: SAMSUNG SE MI CON DUC TO R INC KSR2111 IME 0 £ 71b4142 0007131 b J PNP EPITAXIAL SILICO N TRANSISTOR SWITCHING APPLICATION T~2>n- 1 3 Blas Resistor Bullt In • Switching Circuit, Inverter, Interface circuit Driver circuit • Bullt In trias Resistor (R=22Kß)

BC103C

Abstract: bc 103
Contextual Info: SAMSUNG SEMICONDUCTOR INC 02 KS54HCTLS j2 ß § KS74HCTLS DE | 71b4142 □□Ob4bT S | ” Dual Pof-4 Data Selectors/Multiplexers Sele with 3-State Outputs -<3 / —y l FEATURES DESCRIPTION • • • • Each of these data selectors/multiplexers contains inverters

28C64C

Abstract: KM28C64
Contextual Info: SAM S UN G E L E C T R O N I C S INC 4EE D 71b4142 G011QS3 T CMOS EEPROM KM28C64/KM28C65 'T M L a ^ - Z T ] 8 K x 8 Bit C M O S Electrically Erasable P R O M FEATURES GENERAL DESCRIPTION • O perating Tem perature Range Th e K M 28 C 64 /C 6 5 is a 8 ,1 9 2 x 8 bit E le c tric ally Eras­

KSA1175

Abstract: KSC2785
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC2785 IME D | 71b4142 OOOtìbE 0 | NPN EPITAXIAL SILICON TRANSISTOR T -2 9-1 7 AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSG. TO-92S • Complement to KSA1175 • Collector-Base Voltage Vcso=60V • High Current Gain Bandwidth Product fT=300M H z ffyp

34S71

Abstract: 005D C1005D
Contextual Info: K M 4 4 C 1 005 DJ ELECTRONICS CMOS DRAM 1 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out Quad CAS CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power

32Kx32 Synchronous

Contextual Info: PRELIMINARY KM732V599A/L 32Kx32 Synchronous SRAM 32K x 32 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst On-Chip Address Counter.

ka7309

Abstract: TI 81W CAMERA 803 CMOS sync timing generator T3D 77 KS7214 78235 T3D 91 oil temperature sensor generator
Contextual Info: KS7214 Timing & SYNC. Generator for B/W CCD GENERAL DESCRIPTION KS7214 is Timing control IC for generating timing signal & sync signal which required camera system using monochrome CCD Image sensor. FUNCTIONS - EIA/CCIR STANDARDS TIMING MODE - HI-BAND/ NORMAL TIMING MODE

IRFIZ44

Abstract: IRFIZ40 IRFWZ40 IRFWZ44 LS50A
Contextual Info: N-CHANNEL POWER MOSFETS IRFWZ44/40 IRFIZ44/40 FEATURES • • • • • • • D!-PAK Lower R d sio n Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

D0233

Abstract: 250JUA 250M IRFS340 IRFS341 Tj-25DC
Contextual Info: N-CHANNEL POWER MOSFETS IRFS340/341 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: SSP1N60A Advanced Power MOSFET FEATURES B ^D SS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V — 600 V

DD313

Contextual Info: IRLW/I620A Advanced Power MOSFET FEATURES M • ■ ■ ■ ■ ■ ■ B V Dss = 2 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175* »Operating Temperature Lower Leakage Current : 10nA Max. @ VOS= 200V

Contextual Info: SAMSUNG ELECTRONICS INC b7E D KM48V512A/AL/ALL • TTbMlME DCISTMB 071 «SIICK CMOS DRAM 512K x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM48V512A/AL/ALL-7 70ns 20ns 130ns KM48V512A/AL/ALL-8

Contextual Info: KM48C8004AS CMOS DRAM ELECTR O NICS 8 M x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package

Contextual Info: KS0093 26 COM / 80 SEG DRIVER & CONTROLLER FOR STN LCD MARCH. 1999. • 7 ^ 4 1 4 2 □□SA'na T71 i 26COM/8QSEG DRIVER & CONTROLLER FOR STN LCD KS0093 KS0093 Specification Revision History Content Version Date 0.0 Original 1998. 06 0.1 Miss typed contents changed

Contextual Info: KS7306 DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION KS7306 is a CCD digital signal processor. The electronic video signal that passed the color filter array CFA pattern of CCD is put to the process of dual correlation sampling and then converted to digital video signal by A/D converter.

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPSA55 14E D I 71fc4142 0 0 0 7 3 t i 4 7 PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: Veto =60V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TTbMlMB 001325^ aflfl ■ S M G K KM44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C1OOOAL is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory.

Contextual Info: KS7212 TIMING & SYNC. GENERATOR FOR B/W CCD GENERAL DESCRIPTION The KS7212 is a CMOS integrated circuit designed for making various timing pulses for B/W CCD camera. FEATURES - Compatible with both EIA and CCIR mode EIA: KC73125(U -M, CCIR : KC73129(U)-M)

Contextual Info: The information in this data sheet can change upon complete cajaracterization and evaluation Of this new product. I f n A f\A Q A Iv U /W J ^ rO ^ » 110 M H z C M O S T r u e - C o lo r R A M D A C KDA0484 FEATURES ♦ 110,85MHz Pixel Clock ♦ 8 :1 , 4:1, 2:1,1:1 MUX Modes

Contextual Info: PRELIMINARY KM732V596A/L 32Kx32 Synchronous SRAM 32K x 32 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • The K M 732V596A/L is a 1,048,576-bit Synchronous S ta tic R andom A c c e s s M em ory d e sig ned fo r high

Contextual Info: KM68257B CMOS SRAM 32K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40mA (max.) 2mA(Max.) Operating KM68257B-15 : 150mA (max.) KM68257B-20: 140mA (max.) KM68257B-25: 130mA (max.)

Contextual Info: KM44C4003BS CMOS DRAM ELECTRONICS 4 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time

Z812

Contextual Info: KM6164002/L CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60 mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500/; A (Max) Operating : KM6164002-20 : 250mA (Max.)