71FA4142 Search Results

Contextual Info: KM44 V 1 6004 AS CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM68512A family is fabricated by SAMSUNG'S • Organization : 64K x8 advanced CMOS process technology. The family • Power Supply Voltage : Single 5V +/-10%

Contextual Info: KM44C4110A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung K M 44 C 4 110 A /A L/A LL /A S L is a high speed C M O S 4 ,1 9 4 ,3 0 4 b i t x 4 D ynam ic R andom

KM718BV87-12

Contextual Info: PRELIMINARY 64Kx18 Synchronous SRAM KM718BV87 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • On-Chip Address Counter. The KM718BV87 is a 1,179,648 bit Synchronous Static Random Access Memory designed to support zero wait

samsung flyback pin diagram

Abstract: flyback samsung diagram samsung flyback tv KA2137 k2137 tv flyback samsung diagram samsung tv samsung flyback diagram S6510 flyback samsung
Contextual Info: SAMSUNG S E M I C ON DU CT OR INC Tä ' DE|7%4142 - • - : 0004145 r ^ i - c n LINEAR INTEGRATED CIRCUIT KÄ2137 TV HORIZONTAL PROCESSOR The KA2137 Is a horizontal processor circu it fo r B/W. and color tele­ vision receiver. It Is a m onolithic integrated circu it encapsulated In

SSF5N80A

Abstract: PU 4145 pj 89 diode
Contextual Info: SSF5N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jiA Max. @ VDS = 800V

Contextual Info: DRAM MODULE KMM53221OOBKU/BKUG KMM53221 OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322100BKU is a 2M bit x 32 • Part Identification Dynam ic RAM high density m em ory module. The

Contextual Info: KS7301B DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION KS7301B is a CMOS IC designed for Digital Camcorder System. This Processor is Compatible tor NTSC/PAL & Hiband/Normal Camcorder System. FEATURES - Luminance & Chroma Signal Procession Built in Timing Generator

Contextual Info: K S57C 3016 4-BIT CMOS Microcontroller ELEC TR ONIC S Product Specification OVERVIEW The KS57C3016 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit development approach, SAM4 Samsung Arrangeable Microcontrollers . With an up-to-16-digit LCD

SSF4N80AS

Abstract: MOSFET Input Capacitance CI 1140
Contextual Info: SSF4N80AS Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVqss — 800 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA Max. @ VDS= 800V

pj 84 diode

Abstract: diode pj SSF8N80A GST-E-F pj 82 diode
Contextual Info: SSF8N80A Advanced Power MOSFET FEATURES BV dss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS= 800V