720 SOT323 Search Results

7912

Abstract: configuration of IC 7912 ST 7912 STB7102 4256 stmicroelectronics 1011 sot323 TA 8607
Contextual Info: STB7102 0.5/2.5 GHz LO BUFFER AMPLIFIER PRELIMINARY DATA • OPERATING FREQUENCY 500-2500MHz • LOW CURRENT CONSUMPTION 4mA @ 2.7V • EXCELLENT ISOLATION (43dB @ 850MHz) • INPUT AND OUTPUT RETURN LOSS > 15dB • ULTRA MINIATURE SOT323-6L PACKAGE (1.15 x 1.8 x 0.8 mm)

mbrf1060ctl

Contextual Info: Schottky Rectifiers Peak Inverse Voltage VRWM Max. Average Forward Current (Io) Max. Reverse Leakage Current (IR) Max. Forward Voltage Drop (VF) Max. Junction Capacitance (Cj) (A) Max. Forward Surge Current (IFSM) (A) (V) 30 (mA) (V) (pF) 0.2 4 0.0005 1

transistors BC 543

Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Contextual Info: MMBD4448W Surface Mount Switching Diodes SOT-323 Features — Fast switching speed. — High conductance. — For general purpose switching applications. — Surface mount package ideally suited for automatic insertion. Dimensions in inches and millimeters Applications

2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

S4 78a DIODE schottky

Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

marking code PB surface mount diode

Abstract: MMBD4448W 720 SOT323
Contextual Info: BL Galaxy Electrical Production specification Surface Mount Switching Diode MMBD4448W FEATURES Pb z Fast switching speed. z High conductance. z For general purpose switching applications. z Surface mount package ideally suited Lead-free for automatic insertion.

44S DIODE

Abstract: Q62702-A1066 marking 45s marking C1 MARKING 44s Q62702-A1065 Q62702-A1067 cu marking code diode DIODE BAS JS v Marking on semiconductor 720
Contextual Info: BAS 40W Silicon Schottky Diode ● ● ● ● General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code tape and reel Pin Configuration 1 2 3 BAS 40-04W BAS 40-05W BAS 40-06W Q62702-A1065

Contextual Info: MMBD4448W SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.25 Ampere SOT-323 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-323 Dim. Min.

2907A PNP bipolar transistors

Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Contextual Info: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 10kii, Rg = 47kii _EL nr LT Pin Configuration WNs 1= B Q62702-C2280 Package 2=E o Marking Ordering Code BCR 185W

Contextual Info: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • C ircuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code Marking Package^ tape and reel

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

a2 marking

Abstract: Q62702-A1066 Marking Code to on semiconductor 720
Contextual Info: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code tape and reel 1 2 3 Q62702-A1065

J-STD-020D

Abstract: MMBD4448W
Contextual Info: MMBD4448W SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.25 Ampere SOT-323 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-323 Dim. Min.

Contextual Info: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and

BC850

Abstract: bc849 marking code P
Contextual Info: UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION FEATURES *Suitable for automatic insertion in thick and thin-film circuits. *Complement to BC856 … BC860 2 1 3 SOT-323 1: EMITTER 2: BASE 3: COLLECTOR

BAS40-04W

Abstract: BAS40-05W BAS40-06W VSO05561
Contextual Info: BAS40-04W.BAS40-06W 3 Silicon Schottky Diode
General-purpose diode for high-speed switching
Circuit protection 2
Voltage clamping
High-level detecting and mixing BAS40-04W 1 BAS40-05W BAS40-06W 3 3 3 1 2 1 EHA07005 VSO05561 2 1 2 EHA07006 EHA07004

BC846AW

Abstract: BC846W BC847AW BC847W BC848W BC849W BC856W BC859W
Contextual Info: BC846W . BC849W BC846W . BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2011-07-07 2 ±0.1 0.3 1 ±0.1 Type Code 1 1.25±0.1 2.1±0.1 3 2 1.3 Dimensions - Maße [mm]

BC846AW

Abstract: BC846W BC847AW BC847W BC848W BC849W BC856W BC859W BC849B
Contextual Info: BC846W . BC849W BC846W . BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-27 2 ±0.1 0.3 1 ±0.1 1 2.1 Type Code 1.25±0.1 ±0.1 3 2 1.3 Dimensions - Maße [mm]

Contextual Info: BC846W . BC849W BC846W . BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-27 2 ±0.1 0.3 1±0.1 1 2.1 Type Code 1.25±0.1 ±0.1 3 2 1.3 Dimensions - Maße [mm]

SSF1320N

Abstract: MosFET
Contextual Info: SSF1320N 2A , 20V , RDS ON 58 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low

VSO05561

Contextual Info: BAS 40W. Silicon Schottky Diode 3 • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing 2 1 BAS 40-04W BAS 40-05W BAS 40-06W 3 3 3 1 2 1 2 EHA07005 1 VSO05561 2 EHA07006 EHA07004

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BC846-BC850 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION „ FEATURES * Suitable for automatic insertion in thick and thin-film circuits. * Complement to BC856 … BC860 „ ORDERING INFORMATION Ordering Number Lead Free