BC847W Search Results

smd transistor marking 1B

Abstract: SMD TRANSISTOR MARKING 1F smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1M smd transistor marking 1E SMD Transistor 1f SMD TRANSISTOR MARKING 1D smd 1G SMD transistor MARKING 65 smd transistor 1g
Contextual Info: Transistors IC SMD Type NPN General Purpose Transistor BC846W,BC847W,BC848W Features Low current max. 100 mA . Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC846W BC847W BC848W Unit Collector-base voltage Parameter

BC846AW

Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
Contextual Info: BC846W…BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage

transistor 1BT

Abstract: 1Ft SOT323 1Ft TRANSISTOR transistor 1Ht BC847CW1GT transistor 1kt BC846W 1Bt 65 1kt marking code npn 1bt
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847PN SOT-363 COMPLEMENTARY TRANSISTOR NPN and PNP FEATURES z Epitaxial Die Construction z Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package MAKING: 7P

BC846W

Abstract: BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W
Contextual Info: BC856W.BC860W PNP Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN

847C

Abstract: BC846W BC847W BC848W BC849W BC850W
Contextual Info: DATA SHEET BC846W,BC847W,BC848W,BC849W,BC850W SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 150 mWatts CURRENT SOT-323 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design .087(2.2) .070(1.8) • Collector current IC = 100mA • Both normal and Pb free product are available :

Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.

marking code 1gt

Abstract: transistor marking 1Dt transistor 1kt 1Ft SOT323 1Gt transistor BC847CW pin 1Ft TRANSISTOR 1GT MARKING 1Gt 27 marking code
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors FEATURES BC846W; BC847W; BC848W PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification.

transistor 1bt

Abstract: 1Ft SOT323 npn 1bt 1Ft TRANSISTOR marking code 1gt 1bt npn 1Bt 65 1Gt transistor marking code 1ft 1GT MARKING
Contextual Info: BC846W SERIES BC847W SERIES SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package,

Contextual Info: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE POWER 30/45/65 Volts 200 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary NPN Devices:BC846W/BC847W/BC848W/

BC846AW

Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
Contextual Info: BC846W…BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage

BC847W

Contextual Info: SEMICONDUCTOR BC847W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 1E 1 2 Item Marking Description Device Mark 1 BC847W hFE Grade E A E , B(F), C(G) * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method

BC850AW

Abstract: BC847W BC846AW BC846BW BC846W BC848W BC849W BC850BW BC850W
Contextual Info: BC846W~850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications SOT-323 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50

transistor 1BT

Abstract: transistor 1Ht 1Ft SOT323 1kt marking code BC846BW transistor 1BT 88 marking code 1gt TRANSISTOR 1gt BC846W BC847W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification

BC847AW

Abstract: BC847BW BC847CW BC847W Transistor MARKING CODE AW
Contextual Info: BC847W NPN General Purpose Transistor FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications MECHANICAL DATA • Case: SOT-323 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI

200mWatts

Abstract: transistor 56B marking
Contextual Info: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/

Contextual Info: MCC TM Micro Commercial Components BC846W BC847W BC848W
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Low current max. 100mA Low voltage (max. 65V) • Case Material: Molded Plastic.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847PN SOT-363 COMPLEMENTARY TRANSISTOR NPN and PNP FEATURES z Epitaxial Die Construction z Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package MAKING: 7P

Contextual Info: BC847W NPN General Purpose Transistor FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications MECHANICAL DATA • Case: SOT-323 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic

BC transistor series

Abstract: BC849W BC856W BC857W BC858W BC859W transistor BC SERIES
Contextual Info: BC856W,BC857W,BC858W,BC859W SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 200 mWatts CURRENT 30/45/65 Volts SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Collector current IC = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/ BC849W Series

Contextual Info: BC856W.BC860W PNP Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN

TRANSISTOR SMD MARKING CODE p1

Abstract: TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc smd transistor marking code P MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 1l SMD TRANSISTOR MARKING 1B SMD TRANSISTOR MARKING 28
Contextual Info: COMCHIP Small Signal Transistor SMD Diodes Specialist BC846AW-G Thru. BC848CW-G NPN RoHS Device Features -Power dissipation O PCM: 0.15W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature

Contextual Info: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/

transistor 1BT

Abstract: 1Gt transistor 1bt npn 1Ft SOT323 npn 1bt 1bt transistor marking code 1gt 1Ft TRANSISTOR 1gt MARKING TRANSISTOR 1gt
Contextual Info: Central BC846W SERIES BC847W SERIES TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface