7236 DIODE Search Results

2N7236

Abstract: M6554 mosfet K 1377 IRFM9140 transistor 3et 2sc 1740 transistor 2SC 1384
Contextual Info: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL IRFM914Q 2N 7236 JANS2IM7236 JAIMTX2N723G JANTXV2N7236 R -100 Volt, 0.20 Ohm HEXFET The HEXFET® technology is the key to International

2N7236 JANTX

Abstract: 2N7236 mosfet K 1377
Contextual Info: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM914Q 2N 7236 JANS2N7236 JANTX2N7236 JANTXV2N7236 [REF: M IL-S-1S500/5S5] -100 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

Contextual Info: 79-7236; Rev 0; 6/97 EVfrLu ^ '0 « K'T pXtàLftBLE _ Low-Power, 90Msps, Dual 6-Bit ADC The MAX1003 input amplifiers feature true differential inputs, a -0.5dB analog bandwidth of 55MHz, and userprogrammable input full-scale ranges of 125mVp-p, 250mVp-p, or 500mVp-p. With an AC-coupled input

6839 "direct replacement"

Abstract: 7238 diode diode 7236 387 "direct replacement" Direct Replacement 510-5X 510-28X diode led specs base incandescent
Contextual Info: Brilliance by design SloanLED TM www.SloanLED.com LED Direct Replacement for Flange Base Incandescent Lamp Models 311 & 510 MODEL 311 This T-1 based LED is designed to offer diode reliability as a replacement unit in T-1 hardware. FEATURES • Low power consumption

TR-NWT-000468

Contextual Info: PGR 1 1 1 0 C o m p a c t PIN Recei ve r T his compact PIN ras va' issued a lly diteci for FITL F ite In The Loop and amilar diort and medium haul tdaxm applications Themoduleindud&alnGaAsPIN diode and i soptimized far -40 to + 85 °C op#ation. F eatures

diode E 1110

Abstract: pgr 1110 e 1110 diode
Contextual Info: PGR 1110 Compact PIN Receiver This compact P IN receiver is especially suited for F IT L Fiber In The Loop and similar short and medium haul telecom applications. The module includes a InGaAs PIN diode and is optimizedfor -40 to + 85 °C operation. PGR 1110/R

DIODE T25 4

Abstract: DIODE T25 DIODE T25 4 C
Contextual Info: PGT 21 20 C o m p a c t Laser Transmitter T his compact 1300 nmlaaar tranarttto' is&cpeaallyajited for FITL Fibe' In T he Lap and àmilar dicrt and medium haul té earn applications T he module indudes a Buried HàercàrudurelnGaAs/lnP FabryPerd laser diode and InGaAsPIN back faetì

diode 7236

Abstract: 7236 diode p type laser diode
Contextual Info: PGT 2120 Compact Laser Transmitter This compact 1300 nm laser transmitter is expecially suited for F IT L Fiber In The Loop and similar short and medium haul telecom applications. The module includes a Buried Heterostructure InGaAs/lnP Fabry Perot laser diode and InGaAs P IN back facet

4621 OPTO

Contextual Info: PGR 201 06 Optical Receiver Submodule for 2.5 Gbps Features • Hermetic, 14 pin butterfly package with multisourced footprint • Single-mode fiber pigtail • FC/PC, SC or ST connector • InGaAs avalanche photo diode, APD, with low noise GaAs MMIC preamplifier

RELAY RM2 TR1

Abstract: SMD Transistor z6 24v vogt transformer rm5 capacitor smd transistor z4 220n 400V capacitor MKT MKT 22K transistor smd z3 vogt T4 vogt t6
Contextual Info: Bill of Materials T-SMINTO Q/T SMINTO Evaluationboard Revised: Thursday, March 29, 2001 Top Sheet by R. Froese Revision: 1.0a Infineon Technologies AG COM A1 AE Balanstr. 73 - 81541 Munich - Germany Bill Of Materials Item March 29,2001 Quantity Reference 18:27:32

capacitor 100N 63V 2u2

Abstract: capacitor mkt 100nf 400v vogt t6 RELAY RM2 TR1 MKT .22K CAP TAJA vogt T4 vac5024 t4 sot23 diode r60 mkt
Contextual Info: Bill of Materials Q-SMINTO Q/T SMINTO Evaluationboard Revised: Thursday, March 29, 2001 Top Sheet by R. Froese Revision: 1.0a Infineon Technologies AG COM A1 AE Balanstr. 73 - 81541 Munich - Germany Bill Of Materials Item March 29,2001 Quantity Reference 18:27:32

ITE 8987

Abstract: 1N736 1N736A 1N4131 ITE 8985
Contextual Info: Zener Regulator Diodes P art Num ber i M icro sem i I: P ack a g e D ivision I O utline Type Mil Spec Micmsemi P o w er, V z Data Sh e e t ID W I (V) Izt I (mA) I 1N735 (D 07) 1N735A 1N735A |D 0 7 ) 1N4131 1N4131 (D 035) JAN1N4131 JAN1N4131-1 JAN1N4131UR-1

NEC Vacuum Fluorescent Display

Abstract: Seven-Segment Vacuum Fluorescent Display Vacuum Fluorescent Displays nec fluorescent display driver Vacuum-Fluorescent Display nec ICM7207 ICM7236 ICM7236IPL ICWI7236 vacuumfluorescent
Contextual Info: OIfflEÜm ICWI7236 4 Va Digit Counter With Vacuum Fluorescent Static Display Drivers FEATURES DESCRIPTION • High frequency counting — guaranteed 15MHz, typically 25MHz at 5V The ICM7236 and ICM7236A devices are high-performance CMOS 4V2 digit counters, including decoders, output

NEC Vacuum Fluorescent Display

Abstract: icm7236
Contextual Info: ICM723C 4 1/2-Digit Countei With Vacuum Fluorescenl Static Display Drivers FEATURES DESCRIPTION • High frequency counting—guaranteed 15MHz, typically 25MHz at 5V • Low power operation—less than 100pW quiescent • Direct 4V2-digit seven-segment display drive for

Contextual Info: PGT 201 08 1510 nm DFB Laser The P G T 2 0 1 0 8 laser module with a 1510 nm laser sourse ts intended as a sourse for an optical supervisory channel for systems with line-in amplifiers as proposed by IT U -T in G .691 and G692. The module includes a InGaAs/lnP D F B

Contextual Info: PGR 203 14 Optical Receiver Submodule for 2.5 Gbps DATA FIBER PREAMP APD Key Features • • • • • • • Applications • • • • 60 SDH STM-16 LH SONET OC-48 LR Digital receivers to 2.5 Gbps Analog receivers to 1.7 GHz Pin connection 1. GND 2.

D 2604

Abstract: TA-TSY-000983
Contextual Info: PGT 201 03 Optical Transmitter Submodule for 2.5 Gbps The transmitter module, intended for dispersion limited applications at OC-48/ STM -16. consists of a DFB laser with integrated absorption modulator mounted in a high-speedpackage including isolator. Features

TA-TSY-000983

Contextual Info: PGT 201 02 Optical Transmitter Submodule for 2.5 Gbps The transmitter module, intendedfor WDM applications at 0C-48!STM-16, consists of a DFB laser with integrated absorption modulator mounted in a high speed package including isolator. Features • • •

Contextual Info: PGE 608 11 WDM Gain-Block The WDMgain-block is intended to be used as a pre-amplifier in WDM networks. It provides both input and outputpower monitor signals. The input and output ports have isolators to attenuate spurious reflections in the system. External electronic circuitry

edfa booster

Abstract: 1550 nm pump laser EDFA GE608
Contextual Info: PGE 608 12 WDM Gain-Block The WDMgain-block is intended to be used as a booster amplifier in WDM networks. It provides both input and outputpower monitor signals. The input and output ports have isolators to attenuate spurious reflections in the system. External electronic circuitry

Contextual Info: PGT 201 04 Optical Transmitter Submodule for 2.5 Gbps The transmitter module, intended for W DM applications at OC-48/STM -16, consists of a DFB laser with integrated absorption modulator mounted in a high speed package including isolator. Features • 1.55 Jm DFB C W source m onolithicly integrated w ith an

diode t25 4 fo

Contextual Info: PGT 201 20 1510 nm DFB Laser The P G T 201 2 0 laser module with a 1510 nm laser sourse is intended as a sourse for an optical supervisory channel for systems with line-in amplifiers as proposed by IT U -T in G .691 and G692. The module includes a InGaAs/InP D F B

Contextual Info: Supertex inc. VP0350 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BV dgs -500V Order Number / Package max W n) (min) TO-3 TO-220 Die* 7.5Î2 -1 A VP0350N1 VP0350N5 VP0350ND f*DS(ON) t M IL visual s creen in g a va ila b le Advanced DMOS Technology

1550 nm pump laser EDFA

Contextual Info: PGE 608 13 WDM Gain-Block The WDMgain-block is intended to be used as a booster amplifier in WDM networks. It provides both input and outputpower monitor signals. The amplifier provides a soft-failure mode by means o f double pump lasers. The input and output ports have isolators to