M6554 Search Results

Contextual Info: • M655452 OOlblSM Sb2 ■ INR HEXFRED Other Products From IR INTERNATIONAL RECTIFIER bSE II Ultra-Fast Soft Recovery Part Number VRW M iF Typ @ 95<'c (V) V FM @ Ir @ Typ Typ 'F(T»P) VRWM RthJC ■ rrm Irr (nS) <A) (V) mA • c /w (A) HFA0BTB60 8 1.7 5

Contextual Info: M655452 International IOR]Rectifier DDlSb70 352 • PD-9.703A IRFR214 IRFU214 HEXFET Power M O SFET • • • • • • • INR Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR214 Straight Lead (IRFU214) Available in Tape & Reel Fast Switching

RECTIFIER DIODE D135

Contextual Info: Bulletin 12085/A htemational S Rectifier sd 8ooc.l s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features 1200A • W id e current range ■ High voltag e ratings up to 4 5 0 0 V ■ High surge current capab ilities ■ Diffused junction ■ H ockey Puk version

RF830

Contextual Info: International gäg Rectifier 1 HEXFET Power M O S F E T INTERNATIONAL RECTIFIER 4Ö55452 D01476B G3Ö _ Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements PD-9.311K INR IRF830 bSE I> ^ dss - 500V

Contextual Info: 4655452 International ior Rectifier HEXFET Power MOSFET • • • • • • 0014544 4b2 * I N R PD-9.566B IRC634 INTERNATIONAL b5E R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements

E.78996

Abstract: 78996 L220A 4525 GE DIODE RK 69 ir e.78996 D183 D184 D185 D186
Contextual Info: • International [¡^Rectifier 4Ô5S45B OOlbbSa 712 ■ INR s e r ie s irk.l56, .L71, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules INTERNATIONAL RECTIFIER bSE » Features ■ ■ ■ ■ ■ ■ ■ ■ Fast recovery tim e characteristics Electrically isolated base plate

FA30PA60

Abstract: HFA30PA60C
Contextual Info: bSE D INTERNATIONAL RECTIFIER • 4055452 G G 1 7 ? n Ö4G ■ INR PD-2.336 International S Rectifier HEXFRED Provisional Data Sheet HFA30PA60C u l t r a f a s t , s o f t r e c o v e r y d io d e Major R atings and C h a ra cteristics per Leg C haracteristics

595-PH

Abstract: 30V 595PH
Contextual Info: International k ?r Rectifier HEXFET Power MOSFET • • • • PD-9.847 4655452 0015122 312 * I N R _ IR L IZ 24G INTERNATIONAL RECTIFIER b5E » Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive

Contextual Info: I . . I P D -5.039 International XQR Rectifier IGBT SIP MODULE Features • • • • C P V 363 M4 U preliminart UltraFast IGBT 1 I Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes

Contextual Info: 4B5545E 0015B44 DTE * I N R International 'k ?r Rectifier IR L 520S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • PD-9.908 Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive

IRF1520

Contextual Info: • International rä« Rectifier 4flSS4S2 DOlSOfifi 077 « I N R p d -9.830 IRFI520G INTERNATIONAL RECTIFIER HEXFET Power M O SFET Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating

Contextual Info: I Bulletin 127133 rev. D 09/97 International IS R Rectifier i r k .1 0 5 s e r i e s NEW ADD-A-pak Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features 105 A • E lectrica lly isolated: D BC base plate ■ 3 50 0 VRMS isola tin g vo ltag e

Contextual Info: Data Sheet No. PD-6.057D international I R Rectifier IR 5 1 H D 7 3 7 SELF-OSCILLATING HALF-BRIDGE Features Product Summary • Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation

Contextual Info: PD-2.345A International Rectifier 15CGQ100 SCHOTTKY RECTIFIER 35 Amp Major Ratings and Characteristics Characteristics Description/Fëatures The 15CGQ100 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic,

Contextual Info: International iQR R ectifier HEXFET P o w e r M O S F E T • • • • • 465545E DD151E4 =136 * I N R PD-9.652A IRFI630G IN T E R N A T IO N A L R E C T IF IE R Isolated Package High Voltage lsolation= 2.5KVRM S Sink to Lead Creepage Dist - 4.8mm

c776

Abstract: IRGKI090U06 irgki C776 Y
Contextual Info: bitemational r k ]Rectifier PD-9.962B IRGKI090U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT Low Side Switch O3 V CE = 600V •Rugged Design •Simple gate-drive .Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"