72BL Search Results

72B230L

Abstract: 72BL 72B400L 72B75
Contextual Info: z72B, 72BL Series Nominal Nominal impulse impulse discharge discharge current current 8/20 μ s 10/1000μ μs idi idi KA (A) Nominal Alternating discharge current at 50Hz, 1s ida (A) Nominal dc spark-over voltage Gas Discharge Tube dc spark-over voltage

Contextual Info: IME D INTEGRATED DEVICE • 4Ö2S771 0003^22 1 ■ 16-BIT CMOS ERROR DETECTION AND CORRECTION UNIT MICROSLICE PRODUCT FEATURES: • • ■ T -¥ £ -/7 Pin-compatible to all versions of the 2960 • Military product available compliant to MIL-STD-883, Class B

82441fx

Contextual Info: PRELIMINARY intel INTEL 440FX PCISET 82441FX PCI AND MEMORY CONTROLLER PMC AND 82442FX DATA BUS ACCELERATOR (DBX) Supports the Pentium Pro Processors at Bus Frequencies Up To 66 Mhz — Supports 32-Bit Addressing — Optimized in-Order and Request Queue

57210

Contextual Info: •HYUNDAI HYM572103 N-Series 1M X 72-blt CMOS DRAM MODULE DESCRIPTION The HYM572103 is a 1M x 72-bit Fast page m ode CMOS DRAM m odule consisting of sixteen HY514400A in 20/26 pin SOJ o r TSOP-II tw o HY514403B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on

PJ 52

Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
Contextual Info: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: T T ir r \| EDI2AG272129V 2 Megabyte Sync/Sync Burst, Small OlitHne DIMM e l e c t r o n i c DEsiGNa i n c ADVANCED 2x128Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x128K x72 S ynchronous, S ynchronous Burst The EDI2AG272129VxxD1 is a S ynchronous/S ynchro­

80A230

Abstract: 80A470 80A75 C80AL y1500 80A350 80A400
Contextual Info: A Series 80 Nominal Nominal Nominal impulse impulse Alternating Insulation Capacitance discharge discharge discharge at 1kHz current current 10/1000 current at resistance 8/20 s μs 50Hz, 1s Nominal dc spark-over voltage Gas Discharge Tube dc spark-over

EDI2CG272128V

Contextual Info: ^EDI EDI2CG272128V 2 Megabyte Sync/Sync Burst, Small Outline DIMM ELECTRONIC DESIGNS, IN C ADVANCED 2x128Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x128K x72 Synchronous, S ynchronous Burst The EDI2CG272128VxxD1 is a S ynchronous/S ynchro­ Flow-Through A rchitecture

Hyundai DBS

Contextual Info: •«HYUNDAI HYM572A414A K-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A414A is a 4M x 72-bit EDO m ode CMOS DRAM m odule consisting of eighteen HY5117404A in 24/26 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 |iF and 0.01 ^F

ESI 2160

Abstract: u332 U11B2 cqx 87 u918
Contextual Info: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: m EDI2CG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM \ ELECTRONIC DESIGNS. IN C ADVANCED 2x128Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through • 2x128K x72 Synchronous, S ynchronous Burst • Flow-Through A rchitecture • Linear and Sequential Burst Support via MODE pin

LH Research

Contextual Info: EDI2AG27264V 1 Megabyte Sync/Sync Burst, SfTISlI O utline DIMM ELECTRONIC DESIGNS IN C ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64Kx72 Synchronous, S ynchronous Burst The EDI2AG27264VxxD1 is a S ynchronous/S ynchro­ Flow-Through A rchitecture

EDI2AG272129V

Abstract: ADNA
Contextual Info: EDI2A G272129V 2 Megabyte Sync/Sync Burst, Small Outline DIMM e le c t r o n ic d esig n & in c ADVANCED 2x128Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x128K x72 S ynchronous, S ynchronous Burst The EDI2AG272129VxxD1 is a S ynchronous/S ynchro­

72BL

Abstract: 16s72
Contextual Info: MH16S72AAMU -8 1207959552-BIT 16777216 - WORD BY 72-BIT SynchronousDRAM DESCRIPTION Tile MH16S72AAMD is 16777216 - word by 72-bit Synchronous DRAM module. This consists of eighteen industry standard SMx8 Synchronous DRAMs in TSOP and one industory standard

Contextual Info: m u EDI2CG272128V 2 Megabyte Sync/Sync Burst, Small Outline DIMM \ ELECTRONIC DESIGNS. IN C ADVANCED 2x128Kx72, 3.3V Module Features • Sync/Sync Burst Flow-Through 2x128K x72 Synchronous, S ynchronous Burst The EDI2CG272128VxxD1 is a S ynchronous/S ynchro­

Contextual Info: ^EDI EDI2AG27265V 1 Megabyte Sync/Sync Burst, ^ m S m a l l Outline DIMM ELECTRONIC DESIGNS, IN C A DVANCED 2x64Kx72, 3.3V Module Features Sync/Sync B urst Flow-Through • 2x64kx72 S ynchronous, S ynchronous Burst • Flow-Through A rchitecture • Sequential B urst MODE

Contextual Info: brooktree b3E J> m 1L455TS 0007215 SOD corp Interface Specification IS-360.21 T - l P rim ary R ate Fram er Part # UGA-360 M arch, 1993 Brooktree Brooktree Corporation 9950 Barnes Canyon Road San Diego, CA 92121 USA 619-452-7580 619-452-1249 fax 383596 (telex)

Contextual Info: T T ir r \| K n A I“ 1 1 EDI2AG27264V 1Megabyte Sync/Sync Burst, Small Outline DIMM e le c t r o n ic d esig n & in c ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64K x72 S ynchronous, S ynchronous Burst The EDI2AG27264VxxD1 is a S ynchronous/S ynchro­

Contextual Info: D R A W IN G MADC IN A M t f i i C A N 1 PR O JE C TIO N v£; 1970 ay amp itvca^FtowATED . a l l rig h ts reserved . amp AND OR PATENTS PENDING. 4 o rÄ P ^ C O B P O B A T E O . APPR O VI [ NP370-OU3 Retz $ 7 0 -0 8 i s ffe V tfi3*' /2-8'7e & f,vA6 A - PL.Vi ¿’¿.I

LH Research mm

Abstract: LH Research
Contextual Info: M D EDI2AG27265V 1 Megabyte Sync/Sync Burst, Small Outline DIMM \ ELECTRONIC DESIGNS, IN C ADVANCED 2x64Kx72, 3.3V I Module Features Sync/Sync Burst Flow-Through ♦ 2x64kx72 S ynchronous, S ynchronous Burst The EDI2AG27265VxxD1 is a S ynchronous/S ynchro­

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

ICC01

Abstract: ICC01-400B5 capacitor discharge ignition use ic in capacitor discharge ignition E3 st
Contextual Info: £ = 7 SG S-T H O M SO N ^ 7 # MûfômilSraiMIICl_ ICC01-400B5 Application Specific Discretes A.S.D. IGNITION CONTROL CIRCUIT FEATURES AND BENEFITS • MONOLITHIC CIRCUIT FOR CAPACITANCE DISCHARGE SYSTEM CONTROL. ■ DEDICATED THYRISTOR STRUCTURE FOR