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mt5089 Abstract: IN3035 Text: □3 PLESSEY SEMICOND/DISCRETE DE 72E0533 / -£ > < ? -/7 FM M T5088 FM M T5089 NPN silicon planar small signal transistors A B S O L U T E M A X I M U M R A T IN G S Param eter Sym bol FM M T5088 FM M T5089 C o lle c to r V o lta g e V C BO 35 30 C o lle cto r-E m itte r V o lta g e	OCR Scan	PDF	72E0533 T5088 T5089 T5089 mt5089 IN3035
scr 219 Abstract: ZVN3210L PLESSEY SP Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY ~T5 dF \| 7 S S 0 5 3 3 SEMICOND/ D ISCRETE N-channel enhancement mode vertical DMOS FET 95D 0DDS711 0 \| ~ 0 5 7 1 1 ZVN3210 FEATURES • C o m p a c t ge om etry • F a s t s w itc h in g sp e ed s • N o se c o n d a ry b re a k d o w n	OCR Scan	PDF	0DDS711 ZVN3210 ZVN3210L* 0S715 QDDS71b T-39-11 G-218 72E0533 scr 219 ZVN3210L PLESSEY SP
G-329 Abstract: ZVP3306 ZVP3306A Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE ZVP2220 DE I 75EDS33 ODOSflEE 1 9SD 05822 T '3 7 \ 2 5 G-324 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE G-325 d F \| 7S2[]S33 QOaSflES □ \|~~ 95D 05 823 D PLESSEY SEMICOND/DISCRETE	OCR Scan	PDF	75EDS33 ZVP2220 G-324 G-325 7EE0533 G-326 7220S33 -r-31-25' ZVP3306 G-329 ZVP3306 ZVP3306A
ZVP0120L Abstract: ZVP P-channel Text: PLESSEY s e n i c o n d / d i s c r e t e TS 7220533 P L E S S EY S E M I C O N D /D ISCRETE D F § ? a E D S 3 3 0 0 0 S 7 4 CJ 3 95D 0 5 7 4 9 D T - J7-zr P-channel enhancement mode vertical DMOS FET ZVP0120 FEATURES • Compact geometry • Fast sw itching speeds	OCR Scan	PDF	000S74C ZVP0120 D00S7S3 0D05754 G-256 G-257 G-258 ZVP0120L ZVP P-channel
ZVP2120 Abstract: plessey ZVP P-channel Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY 7s SEMICOND/DISCRETE ZVP2120 FEATURES Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive • Ease of paralleling	OCR Scan	PDF	ZVP2120 ZVP2120A ZVP2120B ZVP2120L -20COND/DISCRETE G-298 G-299 72a0533 ZVP2120 plessey ZVP P-channel
plessey Abstract: BS107P Text: TS PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY SEMICOND/DISCRETE DE~\| 72ED533 GODSSDl D 95D 05501 D T - J S’~ 1 5* N-channel enhancement mode vertical DMOS FET BS107P FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability	OCR Scan	PDF	72ED533 BS107P on20533 550S33 00DSSQ5 72SG533 7EEG533 plessey BS107P
BSS70R Abstract: BSS69 bss69r Text: 7:p l e s s e y 03 s e m i c o n d /d i s c r e t e PIMP silicon planar medium power switching transistors A B SO LU T E M AXIM UM RATIN G S Parameter BSS69 BSS70 Symbol Collector-Base Voltage BSS69 & BSS70 VCBO VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	PDF	7220S33 BSS69 BSS70 BSS69 BSS70 000tt -----------------------------------BSS69 BSS70R bss69r