72V6 Search Results

pc133 sdram

Abstract: PC100-222 PC133-333 PC133 registered reference design
Contextual Info: HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length, and Wrap Sequence Sequential &

GM72V66441

Abstract: GM72V66841
Contextual Info: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V66841C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.

Contextual Info: 72V64636T8 64Mx64, 32Mx8 based, PC133 DESCRIPTION T he H Y M 72V64636T8 Series are 64M x64bits S ynchronous DRAM M odules T he m odules are com posed o f sixteen 32M x8bits CM O S S ynchronous DR AM s in 400m il 54pin TS O P-II package, one 2K bit EEPR O M in 8pin TS S O P package on a 168pin glass-epoxy

pc133 sdram

Abstract: PC133 SDRAM Unbuffered DIMM PC100-222 PC133-222 PC133-333
Contextual Info: HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications using 256Mbit technology.

PC100-222-620

Abstract: 16830 72v6 SIEMENS PC100-222-620
Contextual Info: SIEM ENS 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules HYS 64/72V16200GU HYS 64/72V32220GU HYS 64/72V32200GU HYS 64/72V64220GU PC100-168 pin unbuffered DIMM Modules Preliminary information • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

GM72V66441ct

Abstract: GM72V66441 12A13 1641CT
Contextual Info: Preliminary VerO. 1 ,„ e . LG Semicon Co.,Ltd. 72V66441CT-7/8/10 4 , 194,304 w o r d x 4 b i t x 4 b a n k SYN C HR O N O U S DYNAM IC RAM Description The G M 72V66441C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics

PC100-322

Abstract: PC100-222-620 PC133-333
Contextual Info: HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length,

256MDDRSDRAM

Abstract: B22XX
Contextual Info: HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length,

pc133 sdram

Abstract: PC100-222 PC133-222 PC133-333 PC133 registered reference design
Contextual Info: HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications using 256Mbit technology.

Contextual Info: 72V64636AT8 64Mx64, 32Mx8 based, PC133 DESCRIPTION T he H Y M 72V64636T8 Series are 64M x64bits S ynchronous DRAM M odules. T he m odules are com posed o f sixteen 32M x8bits CM O S S ynchronous DRAM s in 400m il 54pin TS O P-II package, one 2K bit EEPR O M in 8pin TS S O P package on a 168pm glass-epoxy printed

PC100-222-620

Abstract: SIEMENS PC100-222-620 m PC100-222-620 PC100-168
Contextual Info: 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M × 64/72-Bit SDRAM Modules 3.3 V 64M × 64/72-Bit SDRAM Modules HYS 64/72V16200GU HYS 64/72V32220GU HYS 64/72V32200GU HYS 64/72V64220GU PC100-168 pin unbuffered DIMM Modules Preliminary Information • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

Contextual Info: 72V64736T8 , 64Mx72, 32Mx8 based PC133 DESCRIPTION The Hyundai H Y M 72V64736T8 Series are 64M x72bits EC C Synchronous DRAM M odules. T he m odules are com posed o f eighteen 32M x8bits CM O S S ynchronous DR AM s in 400m il 54pin TS O P-II package, one 2K bit EEPR O M in 8pin TS S O P package on a 168pin

gm72v661641ct

Abstract: 72V661641 GM72V661641 GM72V66441 vero cells 72V661641C 12A13 gm72v661641c
Contextual Info: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V661641C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.

SIEMENS PC100-222-620

Abstract: intel 80 82
Contextual Info: 3.3V 32M x 64/72-Bit SDRAM Modules 3.3V 64M x 64/72-Bit SDRAM Modules HYS64/72V32200GU HYS64/72V64220GU PC100-168 pin unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • One bank 32M x 64 and 32M x 72 organisation

Contextual Info: 3.3V 32M x 64/72-Bit SDRAM Modules 3.3V 64M x 64/72-Bit SDRAM Modules HYS64/72V32200GU HYS64/72V64220GU PC100-168 pin unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-ln-Line SDRAM Modules for PC main memory applications • One bank 32M x 64 and 32M x 72 organisation

WF MB 102

Contextual Info: SIEMENS 3.3V 32M x 64/72-Bit SDRAM Modules 3.3V 64M x 64/72-Bit SDRAM Modules HYS64/72V32200GU HYS64/72V64220GU PC100-168 pin unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-ln-Line SDRAM Modules for PC main memory applications • One bank 32M x 64 and 32M x 72 organisation

PC133-333

Contextual Info: HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length,

PC133-333

Contextual Info: HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length,

Contextual Info: SIEMENS 3.3 V 168 pin Registered SDRAM Modules HYS 72V8200GR HYS 72V16200GR HYS 72V32200GR HYS 72V32220GR HYS 72V64200GR HYS 72V128220GR 64MB, 128MB, 256MB, 512MB & 1GB Densities Preliminary Information • 168 Pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module

Contextual Info: SIEMENS 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules HYS 64/72V32200GU HYS 64/72V64220GU PC100-168 pin unbuffered DIMM Modules Preliminary Information • 168 Pin unbuffered 8 Byte Dual-ln-Une SDRAM Modules for PC main memory applications

PC133R-333-542-B2

Abstract: PC133R-333-542 PC133R-333-542-AA
Contextual Info: HYS 72Vxx3xxGR-7.5 PC133 Registered SDRAM-Modules 3.3 V 168-pin Registered SDRAM Modules PC133 128 MByte Module PC133 256 MByte module PC133 512 MByte Module PC133 1 GByte Module • 168-pin Registered 8 Byte Dual-In-Line SDRAM Module for PC and Server main

PC133R-333-542-b2

Abstract: pc133 sdram pc133r sdram PC133-333 MO-161 RWE Series
Contextual Info: HYS 72Vxx3xxGR PC133 Registered SDRAM-Modules 3.3 V 168-pin Registered SDRAM Modules PC133 128 MByte Module PC133 256 MByte module PC133 512 MByte Module PC133 1 GByte Module PC133 2 GByte Module • 168-pin Registered 8 Byte Dual-In-Line SDRAM Module for PC and Server main

PC100-322

Abstract: MO-161 TSOP54
Contextual Info: HYS 72Vx2xxGR PC100 Registered SDRAM-Modules 3.3 V 168-pin Registered SDRAM Modules 64 MB, 128 MB, 256 MB, 512 MB & 1 GB Densities • 168-pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module for PC and Server main memory applications • Programmable CAS Latency, Burst Length,

PC133R-333-542

Abstract: PC133R-333-542-B2 PC133R-333-542-AA MO-161
Contextual Info: HYS 72Vxx3xxGR-7.5 PC133 Registered SDRAM-Modules 3.3 V 168-pin Registered SDRAM Modules PC133 128 MByte Module PC133 256 MByte module PC133 512 MByte Module PC133 1 GByte Module • 168-pin Registered 8 Byte Dual-In-Line SDRAM Module for PC and Server main