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    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF

    EIA1414-4P

    Abstract: EIB1414-4P
    Contextual Info: Excelics EIA/EIB1414-4P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-14.5GHz, 4W Internally Matched Power FET • • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 27% TYPICAL


    Original     		EIA/EIB1414-4P 49dBm EIA1414-4P 3120mA 360mA 35dBm 175oC 150oC 45dBc 26dBm/Tone EIA1414-4P EIB1414-4P PDF

    EPA030B

    Contextual Info: Excelics EPA030B PRELIMINARY DATA SHEET High Performance Heterojunction Dual-Gate FET • • • • • • • +18.0dBm TYPICAL OUTPUT POWER 19.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 300 MICRON RECESSED “MUSHROOM” DUAL GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING


    Original     		EPA030B 12GHz EPA030B PDF

    EIA1011-2P

    Abstract: EIB1011-2P
    Contextual Info: Excelics EIA/EIB1011-2P Not recommended for new designs. Contact factory. Effective 03/2003 10.7-11.7GHz, 2W Internally Matched Power FET • • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL


    Original     		EIA/EIB1011-2P 46dBm EIA1011-2P 180mA 32dBm 175oC 150oC -65/175oC -65/150oC 45dBc EIA1011-2P EIB1011-2P PDF

    EIA1415-2P

    Abstract: EIB1415-2P
    Contextual Info: Excelics EIA/EIB1415-2P Not recommended for new designs. Contact factory. Effective 03/2003 14.40-15.35GHz, 2W Internally Matched Power FET • • • • • • 14.40-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 27% TYPICAL


    Original     		EIA/EIB1415-2P 35GHz, 35GHz 46dBm EIA1415-2P 35GHz 180mA 32dBm 175oC EIA1415-2P EIB1415-2P PDF

    EIA1819-1P

    Abstract: EIB1819-1P
    Contextual Info: Excelics EIA/EIB1819-1P Not recommended for new designs. Contact factory. Effective 03/2003 18.7-19.7GHz, 1W Internally Matched Power FET • • • • • • 18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL


    Original     		EIA/EIB1819-1P 43dBm EIA1819-1P 32dBm 175oC 150oC 45dBc 20dBm/Tone -65/175oC -65/150oC EIA1819-1P EIB1819-1P PDF

    EIA1415-8P

    Abstract: 7371711
    Contextual Info: Excelics EIA1415-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.4-15.35GHz, 8W Internally Matched Power FET • • • • • 14.4-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER


    Original     		EIA1415-8P 35GHz, 35GHz 39dBm 35GHz 6240mA 720mA 120mA EIA1415-8P 7371711 PDF

    EIA1414-2P

    Abstract: EIB1414-2P
    Contextual Info: Excelics EIA/EIB1414-2P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-14.5GHz, 2W Internally Matched Power FET • • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL


    Original     		EIA/EIB1414-2P 46dBm EIA1414-2P 180mA 32dBm 175oC 150oC -65/175oC -65/150oC 45dBc EIA1414-2P EIB1414-2P PDF

    EIA1213-4P

    Abstract: EIB1213-4P
    Contextual Info: Excelics EIA/EIB1213-4P Not recommended for new designs. Contact factory. Effective 03/2003 12.75-13.25GHz, 4W Internally Matched Power FET • • • • • • 12.75-13.25GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL


    Original     		EIA/EIB1213-4P 25GHz, 25GHz 49dBm EIA1213-4P 25GHz 3120mA 360mA 35dBm EIA1213-4P EIB1213-4P PDF

    Contextual Info: Excelics EIA1415A-4P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-15.35GHz, 4W Internally Matched Power FET • • • • • 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +36.0dBm TYPICAL P1dB OUTPUT POWER


    Original     		35GHz EIA1415A-4P 35GHz, EIA1415-4P 360mA 35dBm PDF

    EIA1314-2P

    Abstract: EIB1314-2P
    Contextual Info: Excelics EIA/EIB1314-2P Not recommended for new designs. Contact factory. Effective 03/2003 13.75-14.5GHz, 2W Internally Matched Power FET • • • • • • 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL


    Original     		EIA/EIB1314-2P 46dBm EIA1314-2P 180mA 32dBm 175oC 150oC -65/175oC -65/150oC 45dBc EIA1314-2P EIB1314-2P PDF

    EIA1415-4P

    Abstract: EIB1415-4P
    Contextual Info: Excelics EIA/EIB1415-4P Not recommended for new designs. Contact factory. Effective 03/2003 14.40-15.35GHz, 4W Internally Matched Power FET • • • • • • 14.40-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 27% TYPICAL


    Original     		EIA/EIB1415-4P 35GHz, 35GHz 49dBm EIA1415-4P 35GHz 3120mA 360mA 35dBm EIA1415-4P EIB1415-4P PDF

    EIA1314A-8P

    Contextual Info: Excelics EIA1314A-8P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 8W Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER


    Original     		EIA1314A-8P 39dBm 6240mA 720mA 120mA 38dBm 175oC 150oC -65/175oC EIA1314A-8P PDF

    EIA1011-4P

    Abstract: EIB1011-4P
    Contextual Info: Excelics EIA/EIB1011-4P Not recommended for new designs. Contact factory. Effective 03/2003 10.7-11.7GHz, 4W Internally Matched Power FET • • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL


    Original     		EIA/EIB1011-4P 49dBm EIA1011-4P 3120mA 360mA 35dBm 175oC 150oC 45dBc 26dBm/Tone EIA1011-4P EIB1011-4P PDF

    EIA1213-2P

    Abstract: EIB1213-2P
    Contextual Info: Excelics EIA/EIB1213-2P Not recommended for new designs. Contact factory. Effective 03/2003 12.75-13.25GHz, 2W Internally Matched Power FET • • • • • • 12.75-13.25GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL


    Original     		EIA/EIB1213-2P 25GHz, 25GHz 46dBm EIA1213-2P 25GHz 180mA 32dBm 175oC EIA1213-2P EIB1213-2P PDF

    EIA1818-2P

    Abstract: EIB1818-2P
    Contextual Info: Excelics EIA/EIB1818-2P Not recommended for new designs. Contact factory. Effective 03/2003 18.15-18.75GHz, 2W Internally Matched Power FET • • • • • • 18.15-18.75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL


    Original     		EIA/EIB1818-2P 75GHz, 75GHz 46dBm EIA1818-2P 75GHz 180mA 32dBm 175oC EIA1818-2P EIB1818-2P PDF

    Contextual Info: Excelics EIA1616-8P Not recommended for new designs. Contact factory. Effective 03/2003 16.2-16.4GHz, 8W Internally Matched Power FET • • • • • 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER


    Original     		39dBm EIA1616-8P EIA1616-8P 720mA 38dBm 175oC -65/175oC 6240mA 120mA 150oC PDF

    Contextual Info: Excelics EIA1314A-4P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 4W Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM FEATURES HIGH PAE 27% TYPICAL +36.0dBm TYPICAL P1dB OUTPUT POWER


    Original     		EIA1314A-4P EIA1314A-4P 360mA 35dBm 175oC -65/175oC 3120mA 150oC -65/150oC PDF

    EIA1718A-2P

    Abstract: EIB1718A-2P
    Contextual Info: Excelics EIA/EIB1718A-2P Not recommended for new designs. Contact factory. Effective 03/2003 17.3-18.1GHz, 2W Internally Matched Power FET • • • • • • 17.3-18.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL


    Original     		EIA/EIB1718A-2P 46dBm EIA1718A-2P 180mA 32dBm 175oC 150oC -65/175oC -65/150oC 45dBc EIA1718A-2P EIB1718A-2P PDF

    EIA1718-1P

    Abstract: EIB1718-1P
    Contextual Info: Excelics EIA/EIB1718-1P Not recommended for new designs. Contact factory. Effective 03/2003 17.7-18.7GHz, 1W Internally Matched Power FET • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL


    Original     		EIA/EIB1718-1P 43dBm EIA1718-1P 32dBm 175oC 150oC 45dBc 20dBm/Tone -65/175oC -65/150oC EIA1718-1P EIB1718-1P PDF

    EIA1414-8P

    Contextual Info: Excelics EIA1414-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-14.5GHz, 8W Internally Matched Power FET • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER


    Original     		EIA1414-8P 39dBm 6240mA 720mA 120mA 38dBm 175oC 150oC -65/150oC EIA1414-8P PDF

    EIA1718-2P

    Abstract: EIB1718-2P
    Contextual Info: Excelics EIA/EIB1718-2P Not recommended for new designs. Contact factory. Effective 03/2003 17.7-18.7GHz, Internally Matched Power FET • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL


    Original     		EIA/EIB1718-2P 46dBm EIA1718-2P 180mA 32dBm 175oC 150oC -65/175oC -65/150oC 45dBc EIA1718-2P EIB1718-2P PDF

    Contextual Info: Excelics EIA1415B-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.9-15.1GHz, 8W Internally Matched Power FET • • • • • 14.9-15.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER


    Original     		39dBm EIA1415B-8P EIA1415B-8P 720mA 38dBm 175oC -65/175oC 6240mA 120mA 150oC PDF

    EIA1818-1P

    Abstract: EIB1818-1P
    Contextual Info: Excelics EIA/EIB1818-1P Not recommended for new designs. Contact factory. Effective 03/2003 18.15-18.75GHz, 1W Internally Matched Power FET • • • • • • 18.15-18.75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL


    Original     		EIA/EIB1818-1P 75GHz, 75GHz 43dBm EIA1818-1P 75GHz 32dBm 175oC 150oC EIA1818-1P EIB1818-1P PDF