74*161 MOTOROLA Search Results

zt168

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC1805 1.9 GHz GaAs Power Amplifier This two-stage class AB monolithic GaAs amplifier in a low-cost 16 lead plastic package is designed for output or driver applications in 1.9 GHz PCS handsets and basestations. The design is optimized for 3.0 Volt operation in

mrf9411

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed or use in high gain, low noise small-signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

MRF947T1 equivalent

Abstract: 177.138 Motorola 581 MMBR941LT1 Datasheet of all 74 ic series MRF9411L MMBR941 MMBR941BLT1 MRF9411 MRF9411LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN S ilicon H igh-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz Low Intermodulation Distortion

MRF947T1 equivalent

Abstract: mrf9411 285-2 Motorola 581 "Small Signal Amplifiers" MRF9411L MRF947T1 datasheet MRF9411LT1 177.138 MOTOROLA 934
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

250SU

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC1805 1.9 GHz GaAs Power Amplifier This two-stage class AB monolithic GaAs amplifier in a low-cost 16 lead plastic package is designed for output or driver applications in 1.9 GHz PCS handsets and basestations. The design is optimized for 3.0 Volt operation in

948C

Abstract: MRFIC1805 MRFIC1805R2
Contextual Info: MOTOROLA Order this document by MRFIC1805/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC1805 1.9 GHz GaAs Power Amplifier This two–stage class AB monolithic GaAs amplifier in a low–cost 16 lead plastic package is designed for output or driver applications in 1.9 GHz PCS

948C

Abstract: MRFIC1805 MRFIC1805R2
Contextual Info: MOTOROLA Order this document by MRFIC1805/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC1805 1.9 GHz GaAs Power Amplifier This two–stage class AB monolithic GaAs amplifier in a low–cost 16 lead plastic package is designed for output or driver applications in 1.9 GHz PCS

MRF5811L

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz Low Intermodulation Distortion High Gain

jis z 0237

Abstract: Q218
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small-signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

MRF941

Abstract: MRF947RT3 mrf9411 MRF9411BLT1 MRF947T1 equivalent MRF947R MRF9411L MRF947T1 MMBR941 MMBR941BLT1
Contextual Info: MOTOROLA Order this document by MMBR941LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR941 NPN Silicon MRF941 Low Noise, High-Frequency MRF947 Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

MRF5811LT1

Abstract: MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B
Contextual Info: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz

MRF5811

Abstract: MRF5811L TRANSISTOR SF 128 HP11590B HP11590
Contextual Info: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz

MRF947

Abstract: MRF9411
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small-signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

MRF947RT3

Abstract: z149 MRF947AT1
Contextual Info: MOTOROLA Order this document by MMBR941LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, H igh-Frequency Transistors D esigned for use in high gain, lo w noise s m a ll-s ig n a l am plifiers. T his series fea tu res e xce lle n t b ro ad ban d linearity and is offere d in a v a rie ty o f packages.

jis z 0237

Abstract: l 0734 HP11590B
Contextual Info: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1, T3 NPN Silicon High-Frequency TVansistors M o to r o la P r e fe r r e d D e v ic e s Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz

MRF951

Contextual Info: Order this data sheet by MRF951/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors r MRF951 MMBR951,L MRF9511,L . . . designed for use in high gain, low noise small-signal amplifiers. This series features

MRF947AT1

Abstract: MRF947T1 equivalent MMBR941 MMBR941BLT1 MMBR941LT1 MRF947 MRF947BT1 MRF947T1 NF50
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors MMBR941 MRF947 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor . . . designed for UHF linear and large-signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts Minimum Gain = 8.0 dB

rohm mtbf

Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this

j353

Abstract: transistor j353 j353 transistor MRF559 TRANSISTOR J408 j361 MHW808
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency TVansistor . . . designed for UHF linear and large-signal amplifier applications. • 0.5 W, 870 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON Specified 12.5 Volt, 870 MHz Characteristics —

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors MMBR941 MRF947 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series

mrf947t1 characteristics

Abstract: MRF947 MRF947AT1 MMBR941LT1 mrf947t1 transistor af 178 MMBR941 MMBR941BLT1 MRF947BT1 NF50
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors MMBR941 MRF947 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series

mallory 150 series

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this