7400 SMD Search Results

Contextual Info: DigitalTelecom Features Teridian SONET/SDH SMD Transformer for E4, STM-1, STS-3 and OC-3 Applications Turns Ratio LPRI @25°C µH Min Part Number (PRI1:SEC1) 000-7400-30R 1:1CT 36 PRI (Line) • • • • Developed for Teridian’s 78P2352 RoHS compliant versions available

78P2352

Contextual Info: DigitalTelecom Features Teridian SONET/SDH SMD Transformer for E4, STM-1, STS-3 and OC-3 Applications Turns Ratio LPRI @25°C Leakage L µH Min (nH Max) Part Number (PRI1:SEC1) 000-7400-30R 1:1CT 15 80 PRI (Line) • • • • Developed for Teridian’s 78P2352

smd 1PW

Abstract: IN 5641 A 5641C 5641 PDX56-41 41YW
Contextual Info: Kingbrìght SMD NUMERIC DISPLAYS A PDX56-41 APSX56-41 Part No. Package Description Material X D nm Iv (ucd) @ 10mA *20mA Min. Typ. 625 1200 7400 GaAIAs 640 3000 15500 A P S C 56-41S U R K W A A P D C 56-41S U R K W A InGaAlP 635 4700 17700 A P S A 5 6 -41 S E K W A

Contextual Info: SMD NUMERIC DISPLAYS K C S X 56 K C D X 56 Part No. P ackag e Description Material Common Anode Common Cathode KCSA56-101 KCDA56-101 KCSC56-101 KCDC56-101 GaAsP/GaP KCSA56-104 KCDA56-104 KCSC56-104 KCDC56-104 KCSA56-105 KCDA56-105 λ D nm Iv (ucd) @10mA

KPSA56-104

Abstract: KPSC56-102 KPSA56-121 KPSC56-123 Kingbright KPSC56 ot 3000 smd 123 ot 112 KPDA56-105
Contextual Info: SMD NUMERIC DISPLAYS Kingbright KPSX56 KPDX56 Part No. Package Description Material Common Anode Common Cathode KPSA56-101 KPDA56-101 KPSC56-101 KPDC56-101 GaAsP/GaP KPSA56-104 KPDA56-104 KPSC56-104 KPDC56-104 KPSA56-105 KPDA56-105 λ D nm Iv (ucd) @10mA *20mA

KPCA03-123

Abstract: ot 112 KPCA03-104 kpdc03-123 KPCC03-112 KPCA03-107 KPCA03-109 KPDA03-101 KPDA03-123 KPSC03-101
Contextual Info: SMD NUMERIC DISPLAYS Kingbright KPSX03 KPDX03 Part No. KPBX03 Package Description Material Common Anode Common Cathode KPSA03-101 KPDA03-101 KPBA03-101 KPCA03-101 KPSC03-101 KPDC03-101 KPBC03-101 KPCC03-101 GaAsP/GaP KPSA03-104 KPDA03-104 KPBA03-104 KPCA03-104

Kingbright 7 segment

Contextual Info: Kingbright SMD NUMERIC DISPLAYS A PSX03-41 A PBX03-41 A PDX03-41 Part No. Package Description Material Common Anode Common Cathode APSA03-41EWA APDA03-41EWA APBA03-41EWA APCA03-41 EWA APSC03-41 EWA APDC03-41 EWA APBC03-41 EWA APCC03-41 EWA GaAsP/GaP APSA03-41SRWA

smd 7400

Abstract: ELLATF100N 7400 smd ELLATF470N 5r6 choke dc chopper circuit ELLATF330N marking 221 ELLATF101N ELLATF150N
Contextual Info: Choke Coils Singapore SMD Choke Coils F ELLATF Series: Type: n Features l Magnetic shielded structure l Low DC resistance and capable of corresponding large current l Available on tape and reel for automatic insertion Type ELLATF n Recommended Applications

Low Pass Filter

Abstract: MAG.LAYERS LTL LTL-2012-2G4S1-A2 LTL-1608-2G4S1-A3 LTL-2012-5G5S1-A2 LTL-1608-2G4S1-A1
Contextual Info: Low Temperature Cofired Ceramics Series CUTTUNG-EDGE TECHNOLOGY OF RF SOLUTION LTCC 低温共烧陶瓷 • Feature 特点 Compact Size 体积小 Miniaturized SMD packaged in low profile and lightweight. Low Loss 低插入 低插入损耗 Low insertion loss, high attenuation.

MAG.LAYERS LTL

Abstract: 20122G LTL-16 LTL-2012-5G5S1-A2
Contextual Info: Low Temperature Cofired Ceramics Series CUTTUNG-EDGE TECHNOLOGY OF RF SOLUTION LTCC 低 温 共 烧 陶瓷 • Feature 特 点 Compact Size 体 积 小 Miniaturized SMD packaged in low profile and lightweight. Low Loss 低插入损 耗 Low insertion loss, high attenuation.

mitsubishi 7805

Abstract: 7805 pi MGF0918A 7805 smd
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm

MGF0919A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm

FET K 1358

Abstract: MGF0916A gp 752 9452 smd
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm

MGF0913A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm

SCL 1058

Abstract: GP145 IDS800 MGF0915A fet GP145 3268
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

MGF0915A

Abstract: SCL 1058
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

SMD GP 113

Abstract: MGF0921A
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm

MGF0917A

Abstract: gp 801 pt 11400
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm

KCDA02-101

Abstract: KCSA04-138 KCDA02-105 KCDA03-138 KCSA02-105 KCDA04-104 KCPSA04-102 KCDA02-106 KCSA02-101 KCSA02-106
Contextual Info: P 2-4 SMD NUMERIC DISPLAYS P 5-6 SMD DISPLAY TAPE SPECIFICATIONS P7 RECOMMENDED SOLDERING PATTERN SMD NUMERIC DISPLAYS K C S X 02 K C D X 02 Part No. K C S X 03 P ackag e Description Material Common Anode Common Cathode KCSA02-101 KCDA02-101 KCSC02-101 KCDC02-101

APT10026JN

Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

dc relay economizing coil

Abstract: contactor 115 volt 400 hz 280 amp 5M65 5M65L vitrohm resistors 1134 scr dc compound wound motor silicon rectifier for exciter S 101 156 924 relay vitrohm rheostat
Contextual Info: Index Description DC Control Page Number Index . J1 146 Field Loss Relay . J2 5 DP Series - General Information . J3

FET K 1358

Abstract: 9452 smd MGF0916A fet smd 2657 FET
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0918A L & S BAND / 0.5W SMD non - matched DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0915A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=1.9GHz,Pin=23dBm