742 32PIN IC Search Results

MSM27c100

Abstract: MSM27C1000 742 32pin ic
Contextual Info: O K I semiconductor MSM27C2000ZB 262,144-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The MSM27C1000ZB is a 262,144-word x 8-bit electrically programmable read-only memory. The MSM27C1000ZB is manufactured by CMOS double silicon gate technology and is contained in the 32-pin package.

Contextual Info: O K I semiconductor MSM27C2000ZB 262,144-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The M S M 27C 1000ZB is a 262,144-w ord x 8-bit electrically program m able read-only memory. The M S M 27C 1000ZB is m anufactured by C M O S double silicon gate technology and is

Contextual Info: SHARP CORP ,n r bDE i\ T> _ • „ Ô1ÛD7TÛ OGC H Sb B 224 «SRPJ T- HÌ-2 S- ^ 7 LH6N10/LH6N11 ■ CMOS 1M 128Kx8 Non-Volatile RAM Pin Connections Description The LH6N10/11 is a high speed 1M (128KX8) bit pseudo-static NVRAM which is fabricated using Sharp

Contextual Info: ANALOG D E V IC E S FEATURES Internal Isolating Transformers Military Temperature Range Three Accuracy Options 14-Bit or 12-Bit Resolution High, Continuous Tracking Rate 32-Pin Welded Metal Package Hermetically Sealed Ratiometric Conversion Laser Trimmed - No External Adjustment

IRF 748 n

Abstract: PD4264800
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4264800, 4265800 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD4264800, 4265800 are 8,388,608 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: M 27LV256 ic r o c h ip 256K 32K x 8 Low-Voltage CMOS EPROM FEATURES PACKAGE TYPE • Wide voltage range 3.0V to 5.5V P D IP Vpp C »1 A12 C 2 A7C 3 • High speed performance - 200 ns access time available at 3.0V 26 J A13 A 6C 4 ASE 5 • CMOS Technology for low power consumption

Contextual Info: W29EE512 l U V i n b o n d ^ ^ — >JH IJ^ Electronics Corp. 64K x 8 CMOS FLASH MEMORY G E N E R A L DESCRIPTION The W 29EE512 is a 512K bit, 5-volt only C M O S flash memory organized as 64K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V pp is not

lh5496

Contextual Info: LH5496 FEATURES • Fast Access Times: 15/20/25/35/50/65/80 ns CMOS 51 2x9 FIFO PIN CONNECTIONS 28-PIN PDIP TOP VIEW W C 1• • Full CMOS Dual Port Memory Array D .C o3C • Fully Asynchronous Read and Write &2 C 4 D, C 5 • Expandable-in Width and Depth

DA1020

Abstract: tce 1994 a13ja
Contextual Info: $ 27HC256 M ic r o c h ip 256K 32K x 8 High Speed CMOS EPROM PIN C O N F IG U R A T IO N S FEATURES • • • • • • • High speed performance — 55 ns access time available CMOS technology for low power consumption — 55 mA active current — 100 nA standby current (low power option)

Contextual Info: 27LV256 M ic r o c h ip 256K 32K x 8 Low-Voltage CMOS EPROM FEATURES PACKAGE TYPE • W ide voltage range 3.0V to 5.5V PDIP V pp Q • 1 • High speed perform ance A 12C 2 A 7C 3 A 6C 4 - 200 ns access tim e available at 3.0V • CMOS Technology tor low power consum ption

Contextual Info: <S>2iLas CUSTOMERPROCUREMENISPECIFICATION Z86E66 CM OS Z8 OTP M icrocontroller FEATURES ROM Kbytes RAM Kbytes I/O Package Information n Part V ectored, P rioritized Interrupts w ith Program m able Polarity Z 86E 66 16 236 32 44-Pin QFP n Tw o C om parators

Contextual Info: 27HC256 M ic r o c h ip 256K 32K x 8 High Speed CMOS EPROM FEATURES • • • • • • • PIN CONFIGURATIONS High speed performance — 55 ns access time available CMOS technology for low power consumption — 55m A active current — 100 nA standby current (low power option)

delay echo circuit diagram

Contextual Info: OKI Semiconductor MSM7620 Echo Canceller GENERAL DESCRIPTION The MSM7620 is an improved version of the MSM7520 with the same basic configuration. The MSM7620 includes following improvements: a modified through mode, timing control of the control pin input, and a thinner package. The MSM7620 also provides a pin-for-pin replacement

ECHO canceller IC

Abstract: sft 43 MSM7543 MSM7602-001GS-K MSM7620 MSM7620-001GS-K MSM7620-011GS-BK
Contextual Info: O K I Semiconductor MSM7620 Echo Canceller GENERAL DESCRIPTION The MSM7620 is an im proved version of the MSM7520 w ith the sam e basic configuration. The MSM7620 includes follow ing im provements: a m odified through m ode, tim ing control of the control pin input, and a thinner package. The MSM7620 also provides a pin-for-pin replacement

Contextual Info: HIIICRTRLYST • ■ I f f S E M I C O N D U C T O R CAT28F020 2 Megabit CMOS Flash Memory FEATURES ■ Fast Read Access Time: 120/150/200 ns Commercial and Industrial Temperature Ranges ■ Low Power CMOS Dissipation: - Active: 30 mA max CMOS/TTL levels

SNY 74-2

Abstract: ic 1741 transformer 400Hz 115v
Contextual Info: □ ANALOG DEVICES 12- and 14-Bit Hybrid Synchro/ Resolver-to-Digital Converters SDC/RDC1740/1741/1742 FEATURES Internal Isolating Transformers Military Temperature Rang* Three Accuracy Options 14-Bit of 12-Bit Resolution High, Continuoui Tracking Rata 32-Pin Welded Metal Package

28F512-90

Abstract: 28F512 A12C A15C CAT28F512 28f512-12
Contextual Info: CATALYST L icen sed In tel second so u rce CAT28F512 512K-Bit CMOS Flash Memory FEATURES Commercial, Industrial and Automotive Tem ­ perature Ranges • Fast Read Access Time: 90/120/150 ns ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels

Contextual Info: L icen sed In tel second source C A T2 8 F5 1 2 512K-Bit CMOS Flash M em ory FEATURES • Fast Read Access Time: 90/120/150 ns ■ Low Power CMOS Dissipation: -A c tiv e : 30 mA max CMOS/TTL levels -S ta n d b y: 1 mA max (TTL levels) -S ta n d b y: 100 jiA max (CMOS levels)

Contextual Info: F r e 'i^ in & r / KM68V1002B/BL, KM68V1002BI/BLI CMOS SRAM 128K x 8 Bit High-Speed CMOS Static R A M 3.3V Operating FEATURES GENERAL DESCRIPTION Fast Access Time 8,10,12* (Max.) •• Low Power Dissipation Standby (TTL) : 30*»(Max.) (CM O S): 5 *»(Max.)

Contextual Info: ANALOG DEVICES 12- and 14-Bit Hybrid Synchro/ ResoIver-to-DigitaI Converters SDC/RDC1740/1741/1742 FEA T U R E S Internal Isolating Transform ers Military Temperature Range Three Accuracy Options 14-Bit or 12-Bit Resolution High, Continuous Tracking Rate 32-Pin Welded Metal Package

CAT28C256

Contextual Info: IIIIICRTRLYST • f i l l S E M I C O N D U C T O R CAT28C256 256K-Bit CMOS E2PROM FEATURES ■ Fast Read Access Times: 150/200/250 ns Automatic Page Write Operation: -1 to 64 Bytes in 10ms -Page Load Timer ■ Low Power CMOS Dissipation: -Active: 30 mA Max.

Contextual Info: CY7C441 CY7C443 y CYPRESS Clocked 512 x 9, 2K x 9 FIFOs Features Functional D escription • 512 x 9 CY7C441 and 2,048 x 9 (CY7C443) FIFO buffer memory The CY7C441 and CY7C443 are high-speed, low-power, first-in first-out (FIFO) memories with clocked read and

lz 21001

Abstract: 28F512 CAT28F512 200 ns CAT28F512NI-90T A12C A15C CAT28F512
Contextual Info: L icen sed In tel second source C A T2 8 F5 1 2 512K-Bit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive Tem ­ perature Ranges ■ Fast Read Access Time: 90/120/150 ns ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels

Contextual Info: P r e f ix in r i-/ KM68V1002B/BL, KM68V1002BI/BLI CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION Fast Access Time 8,10,12 •• Low Power Dissipation Standby (TTL) ' (Max.) The KM68V1002B/BL is a 1,048,576-bit high-speed Static Ran­