7470 TTL Search Results

Contextual Info: SN 5470, SN 7470 AND GATED J K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH PRESET AND CLEAR DECEMBER 1 9 8 3 -R E V lS E D M A R C H 1 9 8 8 • S N 5470 . . . J PACKAGE Package Options Include Plastic and Ceramic DIPs and Ceramic Flat Packages S N 7 4 7 0 . . . N PACKAGE

Contextual Info: SN5470, SN7470 AND-GATED J K POSITIVE EDGE TRIGGERED FLIP-FLOPS WITH PRESET AND CLEAR DECEMBER 1 9 8 3 -R E V tS E D M A R C H 1 9 8 8 • S N 5470 . . . J PACKAGE S N 7470 . . . N PACKAGE Package Options Include Plastic and Ceramic DIPs and Ceramic Flat Packages

Flip-Flop 7470

Abstract: 7470 TTL 9N70 i 5470 7470 KK3q ScansUX1000 9N70/7470
Contextual Info: F A IRCH ILD TTL/SSI • 9N70/5470, 7470 EDGE TRIGGERED JK FLIP-FLOP D E S C R IP T IO N - The 9N 70/5470, 7 4 7 0 is a gated input edge triggered J K flip-flop offering direct clear and preset inputs, and complementary Q and Q outputs. Inform ation at the J and K inputs is transferred to the outputs on the positive edge of the clock pulse.

7472 PIN DIAGRAM

Abstract: 74574 74LS112 74LS74 7473 dual JK 7472 ttl TTL 7472 7472 ci CI 7473 pin diagram of ttl 7476
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL-TTL MASTER/SLAVE ui 3 Q </> “ UI 0 (9 D50 9000 D51 9001 D54 54/7470 13 2 A zz J So 0 g1 o° CP = Q. 1 H H (0 2 O O Q. EDGE-TRIGGERED ¡so J. So O « J. S d 0 —6 CP J . KC Äo Qo -n — J— K Q CD Vcc = Pin 14

1Mx8 bit Low Power CMOS Static RAM

Abstract: AN 7470 cmos static ram 1mx8 5v EDI8F81026C EDI8F81026C20M6C EDI8F81026C25M6C EDI8F81026C25M6I EDI8F81026C35M6C
Contextual Info: EDI8F81026C 1Megx8 SRAM Module 1 Megabit x 8 Static RAM CMOS, Module with Revolutionary Pinout Features 1 Meg x 8 bit CMOS Static Random Access Memory • Access Times 20 thru 35ns • TTL Compatible Inputs and Outputs • Fully Static, No Clocks High Density Packaging

EDI9F81025C70BPC

Abstract: EDI9F81025C100BPC EDI9F81025C85BPC EDI9F81025LP70BPC
Contextual Info: EDI9F81025C 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features 2x512Kx8 bit CMOS Static Random Access Memory • Access Times: 70, 85, and 100ns • Common Address and Data Pins • Data Retention Function EDI9F81025LP • TTL Compatible Inputs and Outputs

EDI8F81024C

Abstract: EDI8F81024C100BSC EDI8F81024C70BFC EDI8F81024C70BSC EDI8F81024C85BSC
Contextual Info: EDI8F81024C 1Megx8 SRAM Module 1Megx8 Static RAM CMOS, Module Features 1024Kx8 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI8F81024LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks

7470 TTL

Abstract: 7470 pin diagram V 7470 EDI8F82046C20M6C EDI8F82046C25M6C EDI8F82046C25M6I EDI8F82046C35M6C AN 7470
Contextual Info: EDI8F82046C 2 Megx8 SRAM Module Features 2 Meg x 8 bit CMOS Static Random Access Memory • Access Times 20 thru 35ns • TTL Compatible Inputs and Outputs • Fully Static, No Clocks High Density Packaging • JEDEC Approved, Revolutionary Pinout • 36 Pin DIP, No. 178

7470 pin diagram

Abstract: EDI8F2432C15MZC EDI8F2432C 7470 TTL 32Kx24
Contextual Info: EDI8F2432C 32Kx24 SRAM Module 32Kx24 Static RAM CMOS, High Speed Module Features 32Kx24 bit CMOS Static Random Access Memory • Access Times 15, 20, and 25ns • Output Enable Function • Fully Static, No Clocks • TTL Compatible I/O High Density Packaging

Contextual Info: EDI9F416128C 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks

EDI8F2464C20MZC

Contextual Info: EDI8F2464C 64Kx24 SRAM Module 64Kx24 Static RAM CMOS, High Speed Module Features The EDI8F2464C is a high speed 1.5 megabit Static RAM module organized as 64Kx24. This module is constructed from six 64Kx4 Static RAMs in SOJ packages on an epoxy laminate FR4 board.

Contextual Info: EDI8F24128C 128Kx24 SRAM Module 128Kx24 Static RAM CMOS, High Speed Module Features The EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is constructed from three 128Kx8 Static RAMs in SOJ packages on an epoxy laminate FR4 board.

pin diagram of ic 7470

Abstract: IC 7470
Contextual Info: W D EDI9F232256BC \ 2x256Kx32 SRAM Module ELECTRONIC DESIGNS, INC. 2x256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F232256B isa high speed 16 megabit Static RAM 2x256Kx32 bit BiCMOS and CMOS Static module organized as 2x256K words by 32 bits. This module

Contextual Info: EDI8F3265C 64Kx32 SRAM Module 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3265C is a high speed 2 megabit Static RAM module organized as 64Kx32. This module is constructed from eight 64Kx4 Static RAMs in SOJ packages on an epoxy laminate FR4 board.

transistor w2d

Contextual Info: HARDWARE 1.1 D escrip tio n 1.1 Description The 1A l QUAI M l A U HA1?> group is an 8-bit single-chip microcomputer which utilizes a silicon gate CMOS processing and has a simple instruction system of the 740 family using the same memory space for ROM, RAM and I/O.

Contextual Info: WD\ EDI8F1664C-PSC m m ELECTRONIC DESIGNS, INC. 64Kx16 SRAM Module 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C-PSC is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static RAMs. The 32Kx8 RAMs are organized as two banksof 32Kx16 bits

IC 7470

Contextual Info: W D EDI8F1664C-PSC \ 64Kx16 SRAM Module ELECTRONIC DESIGNS, INC. 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C-PSC is a high speed 64Kx16 CMOS 64Kx16 bit CMOS Static Static RAM Module consisting of four 4 32Kx8 CMOS Random Access Memory Module Static RAMs.

Contextual Info: W D EDI8F3265C \ 64Kx32 SRAM Module ELECTRONIC DESIGNS, INC. 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3265C is a high speed 2 megabit Static RAM 64Kx32 bit CMOS Static module organized as 64Kx32. This module is constructed Random Access Memory

7400 fan-out

Abstract: 7402 nor 7491 8-bit 7490 Decade Counter TTL 7400 TTL 7400 AND propagation delay TTL 7400 propagation delay TTL 7475 TTL 7490 7402 J-K Flip-Flop
Contextual Info: Logic Integrateci Circuits, MIC 7400 Series TTL G a te s in order of gates per package Type M IC M IC M IC M IC M IC M IC M IC M IC M IC M IC M IC M IC 7430 7453 7454 7420 7440 7450 7451 7460 7410 7400 7401 7402 Positive logic definition Gates per package

32Kx16

Contextual Info: W D\ EDI8F1664C-PSC m m ELECTRONIC DESIGNS, INC. 64Kx16 SRAM Module 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C-PSC is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS 64Kx16 bit CMOS Static Random Access Memory Module

Contextual Info: W EDI8F1664C-PSC D Ì ELECTRONIC[€5l£N5. IfMC. 6 4 K x K S R A M M o d u le 64KxT6StaticRAM CMOS, Module Features The EDI8F1664C-PSC is a h i^ i speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8CM0S 64Kx16 bit CMOS Static Random Access Memory Module

EDI8F16512

Contextual Info: WDl EDI8F16512Ç 512KX16 SRAM Module ELECTRONIC. LÉSIGNS, INC.i 512KxWStatic RAM CMOS, Module iF eatures The EDI8F16512C is a 8192K bit CMOS Static RAM based 512Kx16bitCM0S Static on eight 128Kx8 Static RAMs mounted on a multi-layered Random Access Memory

Ferroxcube 3C8

Abstract: core 3c8 7405 power regulator in4934 NE5560 EC35 switching power ferroxcube core 3c8 Ferroxcube 3C8 4229 Ferroxcube core K3019PL_3C8
Contextual Info: INTEGRATED CIRCUITS AN122 NE5560 Push-pull regulator application 1988 Dec Philips Semiconductors Philips Semiconductors Application note NE5560 Push-pull regulator application INTRODUCTION NE/SE5560 Push-Pull Regulator This application describes the use of the

Contextual Info: TYPES SN5470, SN7470 AND-GATED J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH PRESET AND CLEAR REVISED DECEMBER 1983 S N 5 4 7 0 . . . J P AC KA G E • S N 7 4 7 0 . . . J OR N P AC K A G E Package Options Include Plastic and C eram ic DIPs {TO P V IE W D ependable Texas Instrum ents Quality