74BBFI51 Search Results

Contextual Info: Philips Semiconductors Product specification 7 Heavy duty optocouplers 2UALITY T E C H N O L O G I E S C0 RP CNW11AV-1/2/3 S7E D 74bbfi51 0 0 G 4 4 b 4 03T « f i T Y FEATURES • Minimum 2 mm isolation thickness between emitter and receiver • A wide body encapsulation with a

Contextual Info: PANEL INDICATORS DPTOELECïROmCS YELLOW M V 53173 HIGH EFFICIENCY GREEN M V 54173 HIGH EFFICIENCY RED M V 57173 DESCRIPTION The MV5X173 series is a large rectangular lamp which contains two LED chips with separate anodes and cathodes for each light. The illuminated area is

Contextual Info: DUAL PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT9001 PACKAGE DIMENSIONS D ESCRIPTIO N The MCT9001 is a tw o channel optocoupler in a standard, end stackable, 8 pin dual-in-line package, This part offers the same packing density as 4 pin optocouplers, while m inim izing co m ponent count and

Contextual Info: LsSl 2.3 8x8 DOT MATRIX DISPLAYS OPTOELECTRONICS YELLOW GMA2888C HER GMA2988C GREEN GMA2488C BICOLOR RED/GREEN -PACKAGE DIMENSIONS GMC2888C GMC2988C GMC2488C GMC 2688C DESCRIPTION I A. G MX2X88C r I«— 0.4 016

Contextual Info: I REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRD1113/1114 P PACKAGE DIMENSIONS DESCRIPT The QRD1113/1114 reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the

Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 PACKAGE DIMENSIONS DESCRIPTION .126 3.20 .106 (2.69) REFERENCE SURFACE r .203 (5.16) .183(4.65) .030 (0.76) NOM _L .042 (1.07) X ±.010 (±.25) CATHODE t .800 (20.3) MIN 1 I .050 (1.27) REF I The QEC11X is a 940 nm GaAs LED encapsulated in a

Contextual Info: TAPERED PACKAGE T-13/. SOLID STATE LAMPS OPTOELECTRONICS STANDARD RED MV502XA PACKAGE DIMENSIONS DESCRIPTION The MV502X Series of solid state indicators is made with gallium arsenide phosphide light emitting diodes. Encapsulation and lens is epoxy. Various lens effects are

5082-7650

Contextual Info: 0.43-INCH SEVEN SEGMENT DISPLAYS optoelectronics HIGH EFFICIENCY RED 5082-7650 SERIES RED 5082-7700 SERIES FEA TU RES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO N Industry-standard 0.43-inch displays High Efficiency Red and standard Red models Left or right decimal versions

sot212

Abstract: Quality Technologies optocouplers 2ty transistor
Contextual Info: P h ilip s S em Product specification GaAIAs high-voltage optocouplers 2UALITY TECHNOLOGIES CORP CNG82/CNG83 S7E 1> • 74t.bfiSl 0 0 0 4 4 3 e T s 5 T " S 7 t Y FEATURES • High output/input current

Contextual Info: OPTOELECTRONICS PCB MOUNT LED INDICATORS T-3/4 S u b m in ia tu re - Long P a c k a g e Front View -I I-»- Part Number Typical Wave­ length \p (nm) Lens Color Typical Viewing Angle 660 Red Diffused 40° 1.7 2.0 1.0 1 2.0 3 Yellow 585 Yellow Diffused 40°

CBC 184 transistor

Abstract: CNX35U Transistor 2TY CBC 184 c transistor
Contextual Info: CNX35U CNX36U PM VO O I I Û U A L IT Y T E C H N O L O G I E S CORP S7E D 7 4 b b 6 5 1 G G G 4 53 4 EfiS • ■ 3T Y — % OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable fo r TTL integrated circuits.

Contextual Info: Product specification Philips Semiconductors Wide body, high isolation/high-gain optocouplers flUALITY TECHNOLOGIES CORP CNW 138/CNW 139 57E J> 7Mbt3fl51 0004512 bll • ö T Y FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum clearance of 9.6 mm

Transistor 3TY

Contextual Info: I I ÛU AL ITY T E C H N O L O G I E S CORP S7E D • 7 4 b b ô 5 1 0 G G4 41 7 212 « f l T Y U N u a t» CNG36 GaAIAs OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAIAs diode and a silicon npn phototransistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life

Contextual Info: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 PACKAGE DIMENSIONS DESCRIPTION The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.

Contextual Info: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.

Contextual Info: PLASTIC SILICON PHOTODARLINGTON OPTOELECTRDHICS L 14 R 1 DESCRIPTION PACKAGE DIMENSIONS >•—D—• * î t— t—I — — E J .isLs The L14R1 is a silicon photodarlington encapsulated in a clear, wide angle, sidelooker package. i ' Code I I SECTION X-X

c1941 transistor

Abstract: TRANSISTOR C1941
Contextual Info: ISO HIGH-PERFORMANCE AlGaAs PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS II MCT5200 MCT5201 PACKAGE DIMENSIONS DESCRIPTION The MCT520X are high performance logic compatible phototransistor type optically coupled isolator products. They are constructed using a very low degradation and

74LSxx

Abstract: ic 74xx 74lxx
Contextual Info: s HIGH GAIN SPLIT-DARLINGTON OPTOCOUPLERS o OPTOELECTRONICS 6N138 6N139 DESCRIPTION The 6N138/9 single channel optocouplers contain a 700 nm GaAsP LED emitter which is optically coupled to a high gain detector in a split Darlington configuration, providing extremely

transistor c1718

Contextual Info: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS 4N32 4N33 PACKAGE DIMENSIONS DESCRIPTION The 4N32 and 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. FEATURES & APPLICATIONS High isolation resistance— 101,ft

TRANSISTOR BI 243

Abstract: tr/TRANSISTOR BI 243
Contextual Info: E Q SLOTTED OPTICAL SWITCH OP TO E L E CT R ON I CS H21A4/5/6 PACKAGE DIMENSIONS SYMBOL -D1 - ©T — lX 3 | g b! SECTION X - xT~ LEAD PROFILE S T 1339-01 MILLIMETERS M!N. MAX. INCHES MIN. A 10.7 11.0 .422 .433 A, 3.0 3.2 .119 .125 3.0 3.2 .119

Contextual Info: DOUBLE HETEROJUNCTION AIGaAs LOW CURRENT RED LED LAMPS OPTOELECTRONICS J-VA HLMP-D150A/D155A T-1 HLMP-K150/K155 PACKAGE DIMENSIONS DESCRIPTION 3.15±0.2 A recently developed double heterojunction DH AIGaAs/GaAs material technology is the basis of the light

Contextual Info: EO 0.800-INCH SEVEN SEGMENT DISPLAYS OPTOELECTRONICS HIGH EFFICIEN CY GREEN MAN8400 SERIES FEATURES High Efficiency Green nitrogen-doped GaAsP on GaP Large, easy to read, digits Common anode or common cathode models Fast switching — excellent for multiplexing

Contextual Info: [ * n SURFACE M O U N T LED LAMP 1 2 0 6 C H IP TYPE OPTOELECTRONICS RED YELLOW GREEN QTLP650D-2 QTLP650D-3 QTLP650D-4 Diffused Diffused Diffused RED YELLOW GREEN AIGaAs RED QTLP650C-2 QTLP650C-3 QTLP650C-4 QTLP650C-7 W ater W ater W ater W ater Clear Clear

Contextual Info: [s9 AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED522/523 PACKAGE DIMENSIONS DESCRIPTION Th e Q E D 52X is an 8 8 0 nm AIGaAs LED encapsulated in a clear, peach tinted, plastic T O -4 6 package. REFERENCE SURFACE .230 5.84 .210(5.33) FEATURES Tight production Ea distribution.