74HB Search Results

Contextual Info: ÛUALITY TECHNOLOGIES CORP S7E ] 74hbflSl DÜÜ43DA 32T • Û T Y European “Pro Electron” Registered T y p e s _ CNY33 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor T h e CN Y33 is a gallium arsenide, infrared em itting diode

C1945

Abstract: c1946 MCL2501 MCL2503 c1949 transistor C2001 C1950 r88d HCPL 480 6N136
Contextual Info: TECHNOLOGIES CORP . ~flfl _ T ~ | 74hbflSl DGOETDT 3 .— - •v.Ig.T^-.-.-y-x- -i- IN S T R U M E N T , . 0PI 0C0MPL“ S &êBSIêISÊÈIÊSêSêî MCL2501 MGL2503 HCPL-2503 MCL2502 (HCPL-2502) 6N136 6N135 PROPAGATION DELAY COMPARISON

smd 27E

Abstract: MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MOC3041 optocoupler S7E SMD TRANSISTOR transistor C2075 optocoupler moc3031
Contextual Info: DUALITY- TE CHNOLOG IES CÔRP VDE APPROVED ZERO-CROSSING TRIACS QUALITY TECHNOLOGIES 7non ranee,ur 30 mA MCP3030* MCP3040/0Z* ZEHO-GKUaaiNU 15mAMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z ’ bVE ' DESCRIPTION PACKAGE DIMENSIONS These devices are optically isolated zero-crossing triac

Contextual Info: QS74FCT163646 fg\ 9uality High Speed CMOS 3.3V 16-Bit Bus Registered Transceiver t S e m ic o n d u c t o r , In c . QS74FCT163646 FEATURES/BENEFITS DESCRIPTION • Pin and function compatible with T.l. Widebus and IDT Double-Density™ families • CMOS power levels: <1jiW typical standby

schmitt trigger

Abstract: BCIC ttl buffer schmitt trigger non inverting MSM70H000 buffer cmos up "Schmitt Trigger" 74HB
Contextual Info: • GENERAL DESCRIPTION MSM7ÛHB000 series is a master slice Gate Array using dual-layer metal structure HCMOS process and 2/im design rule high capable silicon gate. This series employed output buffer circuit which contains high current drive capability against

Contextual Info: ÛUALITY SEM IC ON DU CT OR INC 41E D Q S7201, Q • ?4bEifiG3 OGQQMbl S M û S I QS7202 High Sp66d CMOS 9-bit FIFO Buffer Memories 512x9: 1Kx9: QS7201 QS7202 FEATURES/BENEFITS •15ns flag and data access times • Fully Asynchronous Read and Write I • Zero fall-through time

D3254

Contextual Info: QS7024A PRELIMINARY High-Speed CMOS 4K x 16 Asynchronous Dual-Port RAM Q FEATURES QS7024A DESCRIPTION High-speed asynchronous dual-port architecture Access times from either port, 20/25/35/55 ns Industry standard pin-out Independent port access and control

AXP 209

Abstract: UPD65031 UPD65070 UPD65006 intel 80487 SCX6206 HG62B40 UPD65022 mb86901 UPD71641
Contextual Info: _► ADVANCED Device to PGA Socket Cross Reference INTERCONNECTIONS. 5 Energy Way, P.O. Box 1019, West Warwick, RI 02893 USA Tel. 800-424-9850 / 401-823-5200 •Fax 401-823-8723 ■Email advintcorp@aol.com ■Internet http://www.advintcorp.com Actel Device#

Contextual Info: • GENERAL DESCRIPTION MSM70HB000 series is a master slice Gate Array using dual-layer metal structure HCMOS process and 2/im design rule high capable silicon gate. This series employed output buffer circuit which contains high current drive capability against

Contextual Info: EQ 0.300-INCH SEVEN SEGMENT DISPLAYS OPTOELECTRONICS HIGH EFFICIENCY RED MAN3900A SERIES FEA TU RES iE I • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ n The MAN3900A Series is a High Efficiency Red LED display. Standard units are also available in Red, Green,

Contextual Info: QS72231, QS72241 ADVANCE INFORMATION Q High-Speed CMOS 2K x 9, 4K x 9 Parallel Clocked FIFO QS72231 QS72241 FEATURES • • • • 15-ns 66-MHz read/write cycle times Synchronous/asynchronous read and write TTL input and output level compatible Low power with industry-standard pinouts

Transistor 3TY

Contextual Info: I I ÛU AL ITY T E C H N O L O G I E S CORP S7E D • 7 4 b b ô 5 1 0 G G4 41 7 212 « f l T Y U N u a t» CNG36 GaAIAs OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAIAs diode and a silicon npn phototransistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life

diode B15A

Abstract: 74ABT245 74F245 74FCT245T 74HB
Contextual Info: QS74FCT2X245T, QS74FCT2X2245T PRELIMINARY Q High Speed CMOS 16-Bit Transceivers in QVSOP qs74fct2X24st qs74fct2X224st FEATURES/BENEFITS • 16-bit Function compatible to the 74F245 74ABT245 and 74FCT245T • CMOS power levels: <15 mW static • Available in 40-pin QVSOP Q2

MCP3043

Abstract: MCP3033
Contextual Info: ÖUALITY TECHNOLOGIES CORP flfl D~~| 74bfcifl51 □ □ □ E c153 b J ~ 88D 02953 ^GENERAL INSTRUMENT I 6.86 .270 6.35 (.250) WWW 8.89 (.350) 0.36 (.014) 1.78 (.070) REF 7.62 (.300) REF 8.38 (.330) ~7 15° MAX - J 0.20 (.008) \ 3.94 (.155) t 4 9 S | 195)

QS74FCT162240T

Abstract: QS74FCT16240T
Contextual Info: QS74FCT16240T, QS74FCT162240T ADVANCE INFORMATION Ô High Speed CMOS 16-Bit Buffers/Line Drivers qs74fcti624ot qs74fctis224ot FEATURES/BENEFITS Pin and function compatible with T.l. Widebus and IDT Double-Density™ families CMOS power levels: <1 \iVJ typical standby

Contextual Info: QS74FCT16374T, QS74FCT162374T ADVANCE INFORMATION Q High Speed CMOS 16 -Bit Registers 3 -State qs74fcti6374t qs74fcti 62374t FEATURES/BENEFITS Pin and function compatible with T.l. W idebus and IDT Double-Density™ families CMOS power levels: <1 typical standby

Contextual Info: QS3390, QS32390 Q High-Speed CMOS QuickSwitch 16 to 8 Multiplexer QS3390 QS32390 FEATURES/BENEFITS • • • • • 16:8 multiplexer function with zero delay 5£i switches connect inputs to outputs Zero propagation delay Low power CMOS proprietary technology

2sa 1023

Contextual Info: QS723611, QS723621 PRELIMINARY Q High-Speed CMOS 5 1 2 X 3 6 X 2 /1 K X 3 6 X 2 Bi-directional FIFO DESCRIPTION FEATURES/BENEFITS Fast cycle times: 20/25/30/35 ns 50/40/33/28 MHz Functionally Upwards-Compatible with QS725420A Two 512 x 36-bit (QS723611) or 1K x 36-bit

NEC B1100

Abstract: b1100 nec UPD65031 PD65031 UPD650 MCA600ECL upd65022 UPD65012 upd65051 UPD65006
Contextual Info: ADVANCED . INTERCONNECTIONS « Device To PGA Socket Cross Reference 5 Energy Way, P.O. Box 1019, West Warwick, Rl 02893 . Tel. 4 0 1 -8 23 -52 0 0 • FAX 401-823-8723 Device To PGA Socket Cross Reference Altera Device # Footprint # EP1800 EPM 5128 EPM5192

Contextual Info: QS6611 Preliminary Data Sheet Rev. 3.4 Q QS6611 lO/lOOBaseTX Symbol Transceiver Quality Semiconductor Inc. Preliminary Data Sheet Rev. 3.4 October 1996 DISTINCTIVE FEATURES • Low power all-CMOS design with Icc <120 mA for lOBaseT, Icc <100 mA for 100BaseT

h11c4

Abstract: H11C3
Contextual Info: PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 a DESCRIPTION The H11C series consists of a gallium -arsenide infrared em itting diode optically coupled with a light activated silicon controlled rectifier in a dual-in-line package.

XL4005

Abstract: SCX6206 UPD65006 UPD65012 UPD65022 UPD65031 UPD65042 UPD65070 SCX6218 SCX6225
Contextual Info: FACTSHEET F-196 MVAS REFERENCE NS32381-15 NS32382 NS32532 NS32580 NS32GX32 SCX6206 SCX6212 SCX6218 SCX6218 SCX6225 SCX6225 SCX6225 SCX6232 SCX6232 SCX6244 SCX6244 SCX6244 SCX6264 SCX6287 SCX6B120 SCX6B120 SCX6B120 SCX6B150 SCX6B150 SCX6B21 SCX6B31 SCX6B48

Contextual Info: QS72215, QS72225 Ô High-Speed CMOS 512 x 1 8 ,1K x 18 Parallel Clocked FIFO QS72215 QS72225 FEATURES • CMOS dual-port SRAM technology, 512 x 18 or 10 24x 18 • Fast cycle times: 20/25/35 ns • Choice of standard or enhanced operating mode • Device comes up into one of two known default

Y2C diode

Abstract: y6c diode fl03 QS29FCT2520 AM29520
Contextual Info: QS29FCT520T, 521T, 2520T, 2521T Q QS29FCT520T QS29FCT521T High Speed CMOS Multilevel Pipeline Registers QS29FCT2520T QS29FCT2521T FEATURES/BENEFITS • • • • Pin and function compatible to the Am29520 Ground bounce controlled outputs Reduced output swing of 0-3.5V