7512N Search Results

Contextual Info: VBE 55-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 59 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED Preliminary Data VRSM VRRM V V 1200 1200 D Typ A N VBE 55-12NO7 K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM

Fast Recovery Bridge Rectifier, 60A, 600V

Contextual Info: VUE 75-12NO7 ECO-PAC TM Threee Phase Rectifier Bridge IdAV = 74 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 1200 1200 D Typ VUE 75-12NO7 A H N K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM TVJ = 45°C VR = 0

IXYS DS

Contextual Info: VUE 75-12NO7 ECO-PAC TM Threee Phase Rectifier Bridge IdAV = 74 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED Preliminary Data VRSM VRRM V V 1200 1200 D Typ VUE 75-12NO7 A H N K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM

Contextual Info: VBE 55-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 59 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 1200 1200 D Typ A N VBE 55-12NO7 K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM TVJ = 45°C VR = 0

75-12NO7

Contextual Info: VUE 75-12NO7 ECO-PACTM Three Phase Rectifier Bridge IdAV = 74 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM V 1200 VRRM V 1200 Type D VUE 75-12NO7 A H N K Symbol Conditions IdAV  IdAVM TC = 85°C, module IFSM TVJ = 45°C; VR = 0

75-12N07

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V 7490A
Contextual Info: □ IXYS VUE 75-12N07 ECO-PAC Threee Phase Rectifier Bridge IdAV - 74 A VRRM = 1200V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED Prelim inary Data oD V V A c_ , -

7512N

Contextual Info: 83C751/87C751 Philips Components-Signetics Docum ent No. 853-0599 ECN No. 99807 Date of Issue June 15, 1990 Status P roduct Specification CMOS single-chip 8-bit microcontroller Application Specific Product DESCRIPTION FEATURES The P hilips 83C 751/87C 751 offers the

20-20N01

Abstract: 7512N ixys application note 10MSA 26-06N07 26-12N07 100-06N07 30-20N01
Contextual Info: Rectifier Bridges with Fast Diodes Rectifier Bridges with Superfast Recovery Diodes 1-phase, B2U V RRM ► New V *dAV @ Tc ^FSM A °C 45°C 10 ms A V to rr V m p ^V JM ^ th J C Ih JH typ Package style per Chip per Chip K/W K/W Fig. No. Type °C 150 50 110

V1212M

Abstract: 7512N 7515A 80c751
Contextual Info: Philips Semiconductors Product specification 80C51 8-bit m icrocontroller fam ily 2K /64 O TP/R O M , l2C, low pin count aonvzi DESCRIPTION PIN CONFIGURATIONS P3.4/A4 The 8XC751 M icrocontroller is fabricated with Philips high-density CM OS technology. Philips epitaxial substrate m inim izes CMOS

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

7512N

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V 55-12NO7
Contextual Info: VBE 55-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 59 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 1200 1200 D Typ A N VBE 55-12NO7 K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM TVJ = 45°C VR = 0

Contextual Info: VUE 75-12NO7 ECO-PACTM Three Phase Rectifier Bridge IdAV = 74 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM V 1200 VRRM V 1200 Type D VUE 75-12NO7 A H N K Symbol Conditions IdAV  IdAVM TC = 85°C, module IFSM TVJ = 45°C; VR = 0

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX